Passive terahertz imaging detectors based on antenna-coupled high-electron-mobility transistors.
Opt Express
; 28(4): 4911-4920, 2020 Feb 17.
Article
em En
| MEDLINE
| ID: mdl-32121721
ABSTRACT
Aiming at the requirement of passive terahertz imaging, we report a high-sensitivity terahertz detector based on an antenna-coupled AlGaN/GaN high-electron-mobility transistor (HEMT) at 77 K without using low-noise terahertz amplifier. The measured optical noise-equivalent power and the noise-equivalent temperature difference of the detector were about 0.3p W/H z and 370 mK in a 200 ms integration time over a bandwidth of 0.7 - 0.9 THz, respectively. By using this detector, we demonstrated passive terahertz imaging of room-temperature objects with signal-to-noise ratio up to 13 dB. Further improvement in the sensitivity may allow passive terahertz imaging using AlGaN/GaN-HEMT at room temperature.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2020
Tipo de documento:
Article