Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory.

Yoo, Songyi; Kang, In-Man; Cho, Sung-Jae; Sun, Wookyung; Shin, Hyungsoon

Yoo, Songyi; Kang, In-Man; Cho, Sung-Jae; Sun, Wookyung; Shin, Hyungsoon.

Afiliação

Yoo S; Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea.
Kang IM; School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea.
Cho SJ; Department of Electronic Engineering, Gachon University, Gyeonggi-do 461-701, Korea.
Sun W; Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea.
Shin H; Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea.

J Nanosci Nanotechnol ; 21(8): 4216-4222, 2021 08 01.

Article em En | MEDLINE | ID: mdl-33714306

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2021 Tipo de documento: Article

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