Structure and electron affinity of the 4H-SiC (0001) surfaces: a methodological approach for polar systems.

Beattie, J M A; Goss, J P; Rayson, M J; Briddon, P R

Beattie, J M A; Goss, J P; Rayson, M J; Briddon, P R.

Afiliação

Beattie JMA; School of Engineering, University of Newcastle, Newcastle upon Tyne NE1 7RU, United Kingdom.
Goss JP; School of Engineering, University of Newcastle, Newcastle upon Tyne NE1 7RU, United Kingdom.
Rayson MJ; School of Engineering, University of Newcastle, Newcastle upon Tyne NE1 7RU, United Kingdom.
Briddon PR; School of Engineering, University of Newcastle, Newcastle upon Tyne NE1 7RU, United Kingdom.

J Phys Condens Matter ; 33(16)2021 Apr 20.

Article em En | MEDLINE | ID: mdl-33752180

Palavras-chave

4HSiC; DFT; electron affinity; polar; polar slabs; silicon carbide; surfaces

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: J Phys Condens Matter Assunto da revista: BIOFISICA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Reino Unido

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