Investigation of the thermal tolerance of silicon-based lateral spin valves.

Yamashita, N; Lee, S; Ohshima, R; Shigematsu, E; Koike, H; Suzuki, Y; Miwa, S; Goto, M; Ando, Y; Shiraishi, M

Yamashita, N; Lee, S; Ohshima, R; Shigematsu, E; Koike, H; Suzuki, Y; Miwa, S; Goto, M; Ando, Y; Shiraishi, M.

Afiliação

Yamashita N; Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, 615-8510, Japan. yamashita.naoto.64r@st.kyoto-u.ac.jp.
Lee S; Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, 615-8510, Japan.
Ohshima R; Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, 615-8510, Japan.
Shigematsu E; Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, 615-8510, Japan.
Koike H; Advanced Products Development Center, TDK Corporation, Ichikawa, Chiba, 272-8558, Japan.
Suzuki Y; Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531, Japan.
Miwa S; Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531, Japan.
Goto M; Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan.
Ando Y; Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531, Japan.
Shiraishi M; Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, 615-8510, Japan.

Sci Rep ; 11(1): 10583, 2021 May 19.

Article em En | MEDLINE | ID: mdl-34012009

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Japão

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