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Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate.
Jin, Risheng; Shi, Keli; Qiu, Beibei; Huang, Shihua.
Afiliação
  • Jin R; College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China.
  • Shi K; College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China.
  • Qiu B; College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China.
  • Huang S; College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China.
Nanotechnology ; 33(2)2021 Oct 22.
Article em En | MEDLINE | ID: mdl-34619668
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2021 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2021 Tipo de documento: Article