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T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process.
Rikan, Behnam S; Kim, David; Choi, Kyung-Duk; Hejazi, Arash; Yoo, Joon-Mo; Pu, YoungGun; Kim, Seokkee; Huh, Hyungki; Jung, Yeonjae; Lee, Kang-Yoon.
Afiliação
  • Rikan BS; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Kim D; SKAIChips Co., Ltd., Suwon 16419, Korea.
  • Choi KD; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Hejazi A; SKAIChips Co., Ltd., Suwon 16419, Korea.
  • Yoo JM; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Pu Y; SKAIChips Co., Ltd., Suwon 16419, Korea.
  • Kim S; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Huh H; SKAIChips Co., Ltd., Suwon 16419, Korea.
  • Jung Y; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Lee KY; SKAIChips Co., Ltd., Suwon 16419, Korea.
Sensors (Basel) ; 22(2)2022 Jan 10.
Article em En | MEDLINE | ID: mdl-35062467
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sensors (Basel) Ano de publicação: 2022 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sensors (Basel) Ano de publicação: 2022 Tipo de documento: Article