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Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA µm-1.
Tan, Congwei; Jiang, Jianfeng; Wang, Jingyue; Yu, Mengshi; Tu, Teng; Gao, Xiaoyin; Tang, Junchuan; Zhang, Congcong; Zhang, Yichi; Zhou, Xuehan; Zheng, Liming; Qiu, Chenguang; Peng, Hailin.
Afiliação
  • Tan C; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Jiang J; Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University, Beijing 100871, China.
  • Wang J; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Yu M; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Tu T; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Gao X; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Tang J; Division of G-Device Technology, Beijing Graphene Institute, Beijing 100095, China.
  • Zhang C; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Zhang Y; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Zhou X; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Zheng L; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Qiu C; Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
  • Peng H; Division of G-Device Technology, Beijing Graphene Institute, Beijing 100095, China.
Nano Lett ; 22(9): 3770-3776, 2022 May 11.
Article em En | MEDLINE | ID: mdl-35467885
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China