Highly Tunable, Broadband, and Negative Photoresponse MoS<sub>2</sub> Photodetector Driven by Ion-Gel Gate Dielectrics.

Shen, Zhenzhen; Zhang, Chunchi; Meng, Yajing; Wang, Zegao

Highly Tunable, Broadband, and Negative Photoresponse MoS₂ Photodetector Driven by Ion-Gel Gate Dielectrics.

Shen, Zhenzhen; Zhang, Chunchi; Meng, Yajing; Wang, Zegao.

Afiliação

Shen Z; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
Zhang C; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
Meng Y; Mental Health Center and Psychiatric Laboratory, the State Key Laboratory of Biotherapy, West China Hospital of Sichuan University, Chengdu 610065, China.
Wang Z; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.

ACS Appl Mater Interfaces ; 14(28): 32412-32419, 2022 Jul 20.

Article em En | MEDLINE | ID: mdl-35816428

Palavras-chave

MoS2 phototransistor; broadband photodetection; highly-tunable photoresponse; interface modulation; ion-gel; negative photoresponse

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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