Ferroelectric Nanogap-Based Steep-Slope Ambipolar Transistor.

Guan, Yaodong; Guo, Zhe; You, Long

Guan, Yaodong; Guo, Zhe; You, Long.

Afiliação

Guan Y; School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
Guo Z; School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
You L; School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.

Small ; 18(48): e2203017, 2022 12.

Article em En | MEDLINE | ID: mdl-36180410

Assuntos

Eletricidade; Óxidos; Semicondutores

Palavras-chave

beyond complementary metal-oxide-semiconductors; ferroelectric nanogaps; ferroelectronics; negligible off-current; steep-slope transistors

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Óxidos / Eletricidade Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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