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Carrier Relaxation and Multiplication in Bi Doped Graphene.
Liu, Qi; Lu, Xianyang; Liu, Yuxiang; Li, Zhihao; Yan, Pengfei; Chen, Wang; Meng, Qinghao; Zhang, Yongheng; Yam, ChiYung; He, Liang; Yan, Yu; Zhang, Yi; Wu, Jing; Frauenheim, Thomas; Zhang, Rong; Xu, Yongbing.
Afiliação
  • Liu Q; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Lu X; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Liu Y; Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 28359, Bremen, Germany.
  • Li Z; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Yan P; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Chen W; National Laboratory of Solid State Microstructure, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Meng Q; National Laboratory of Solid State Microstructure, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Zhang Y; National Laboratory of Solid State Microstructure, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Yam C; Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518000, China.
  • He L; Hong Kong Quantum AI Lab Limited, Hong Kong, 00000, China.
  • Yan Y; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Zhang Y; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Wu J; National Laboratory of Solid State Microstructure, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Frauenheim T; York-Nanjing Joint Center (YNJC) for Spintronics and Nano-engineering, Department of Electronics and Physics, University of York, York, YO10 5DD, UK.
  • Zhang R; Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 28359, Bremen, Germany.
  • Xu Y; Beijing Computational Science Research Center, Haidian District, Beijing, 100193, China.
Small ; 19(18): e2206218, 2023 May.
Article em En | MEDLINE | ID: mdl-36670078
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China