Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications.

Sattari-Esfahlan, Seyed Mehdi; Kim, Hyoung Gyun; Hyun, Sang Hwa; Choi, Jun-Hui; Hwang, Hyun Sik; Kim, Eui-Tae; Park, Hyeong Gi; Lee, Jae-Hyun

Sattari-Esfahlan, Seyed Mehdi; Kim, Hyoung Gyun; Hyun, Sang Hwa; Choi, Jun-Hui; Hwang, Hyun Sik; Kim, Eui-Tae; Park, Hyeong Gi; Lee, Jae-Hyun.

Afiliação

Sattari-Esfahlan SM; Department of Material Science and Engineering, Ajou University, Suwon16499, Korea.
Kim HG; Department of Materials Science and Engineering, Seoul National University, Seoul08826, Korea.
Hyun SH; Institute for Microelectronics, TU Wien, Vienna1040, Austria.
Choi JH; Department of Materials Science and Engineering, Seoul National University, Seoul08826, Korea.
Hwang HS; Department of Material Science and Engineering, Ajou University, Suwon16499, Korea.
Kim ET; Department of Energy Systems Research, Ajou University, Suwon16499, Korea.
Park HG; Department of Material Science and Engineering, Ajou University, Suwon16499, Korea.
Lee JH; Department of Energy Systems Research, Ajou University, Suwon16499, Korea.

ACS Appl Mater Interfaces ; 15(5): 7274-7281, 2023 Feb 08.

Article em En | MEDLINE | ID: mdl-36719071

Palavras-chave

amorphous boron nitride (a-BN); boron nitride encapsulation; field effect transistor (FET); graphene; heterojunction; high mobility

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2023 Tipo de documento: Article

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