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Vertical full-colour micro-LEDs via 2D materials-based layer transfer.
Shin, Jiho; Kim, Hyunseok; Sundaram, Suresh; Jeong, Junseok; Park, Bo-In; Chang, Celesta S; Choi, Joonghoon; Kim, Taemin; Saravanapavanantham, Mayuran; Lu, Kuangye; Kim, Sungkyu; Suh, Jun Min; Kim, Ki Seok; Song, Min-Kyu; Liu, Yunpeng; Qiao, Kuan; Kim, Jae Hwan; Kim, Yeongin; Kang, Ji-Hoon; Kim, Jekyung; Lee, Doeon; Lee, Jaeyong; Kim, Justin S; Lee, Han Eol; Yeon, Hanwool; Kum, Hyun S; Bae, Sang-Hoon; Bulovic, Vladimir; Yu, Ki Jun; Lee, Kyusang; Chung, Kwanghun; Hong, Young Joon; Ougazzaden, Abdallah; Kim, Jeehwan.
Afiliação
  • Shin J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Sundaram S; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Jeong J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Park BI; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Chang CS; CNRS, IRL 2958, GT-CNRS, Georgia Tech-Lorraine, Metz, France.
  • Choi J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim T; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Saravanapavanantham M; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea.
  • Lu K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Suh JM; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Song MK; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea.
  • Liu Y; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.
  • Qiao K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim JH; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kang JH; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lee D; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lee J; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea.
  • Kim JS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lee HE; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Yeon H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kum HS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Bae SH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Bulovic V; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Yu KJ; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lee K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Chung K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Hong YJ; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Ougazzaden A; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Nature ; 614(7946): 81-87, 2023 02.
Article em En | MEDLINE | ID: mdl-36725999
ABSTRACT
Micro-LEDs (µLEDs) have been explored for augmented and virtual reality display applications that require extremely high pixels per inch and luminance1,2. However, conventional manufacturing processes based on the lateral assembly of red, green and blue (RGB) µLEDs have limitations in enhancing pixel density3-6. Recent demonstrations of vertical µLED displays have attempted to address this issue by stacking freestanding RGB LED membranes and fabricating top-down7-14, but minimization of the lateral dimensions of stacked µLEDs has been difficult. Here we report full-colour, vertically stacked µLEDs that achieve, to our knowledge, the highest array density (5,100 pixels per inch) and the smallest size (4 µm) reported to date. This is enabled by a two-dimensional materials-based layer transfer technique15-18 that allows the growth of RGB LEDs of near-submicron thickness on two-dimensional material-coated substrates via remote or van der Waals epitaxy, mechanical release and stacking of LEDs, followed by top-down fabrication. The smallest-ever stack height of around 9 µm is the key enabler for record high µLED array density. We also demonstrate vertical integration of blue µLEDs with silicon membrane transistors for active matrix operation. These results establish routes to creating full-colour µLED displays for augmented and virtual reality, while also offering a generalizable platform for broader classes of three-dimensional integrated devices.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos