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Switching the memory behaviour from binary to ternary by triggering S62- relaxation in polysulfide-bearing zinc-organic complex molecular memories.
Zhou, Pan-Ke; Lin, Xiao-Li; Chee, Mun Yin; Lew, Wen Siang; Zeng, Tao; Li, Hao-Hong; Chen, Xiong; Chen, Zhi-Rong; Zheng, Hui-Dong.
Afiliação
  • Zhou PK; Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China. lihh@fzu.edu.cn.
  • Lin XL; Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China. lihh@fzu.edu.cn.
  • Chee MY; School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
  • Lew WS; School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
  • Zeng T; Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
  • Li HH; Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China. lihh@fzu.edu.cn.
  • Chen X; Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China. lihh@fzu.edu.cn.
  • Chen ZR; Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China. lihh@fzu.edu.cn.
  • Zheng HD; Fujian Engineering Research Centre of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China. youngman@fzu.edu.cn.
Mater Horiz ; 10(7): 2535-2541, 2023 Jul 03.
Article em En | MEDLINE | ID: mdl-37070656
ABSTRACT
The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of conjugation have been fabricated as memory devices. ZnS6(L)2-based memories (L = pyridine and 3-methylpyridine) can exhibit only bipolar binary memory performances, but ZnS6(L)-based memories (L = 2,2'-bipyridine and 1,10-phenanthroline) illustrate non-volatile ternary memory performances with high ON2/ON1/OFF ratios (104.22/102.27/1 and 104.85/102.58/1) and ternary yields (74% and 78%). Their ON1 states stem from the packing adjustments of organic ligands upon the injection of carriers, and the ON2 states are a result of the ring-to-chain relaxation of S62- anions. The lower conjugated degrees in ZnS6(L)2 result in less compact packing; consequently, the adjacent S62- rings are too long to trigger the S62- relaxation. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Mater Horiz Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Mater Horiz Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China