Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors.

Lee, Song; Lee, Jeong-In; Kim, Chang-Hyun; Kwon, Jin-Hyuk; Lee, Jonghee; Boampong, Amos Amoako; Kim, Min-Hoi

Lee, Song; Lee, Jeong-In; Kim, Chang-Hyun; Kwon, Jin-Hyuk; Lee, Jonghee; Boampong, Amos Amoako; Kim, Min-Hoi.

Afiliação

Lee S; Department of Creative Convergence Engineering, Hanbat National University, Daejeon, South Korea.
Lee JI; Department of Creative Convergence Engineering, Hanbat National University, Daejeon, South Korea.
Kim CH; School of Electronic Engineering, Gachon University, Seongnam, South Korea.
Kwon JH; Research Institute of Printed Electronics & 3D Printing, Industry University Cooperation, Hanbat National University, Daejeon, South Korea.
Lee J; Department of Creative Convergence Engineering, Hanbat National University, Daejeon, South Korea.
Boampong AA; Research Institute of Printed Electronics & 3D Printing, Industry University Cooperation, Hanbat National University, Daejeon, South Korea.
Kim MH; Research Institute of Printed Electronics & 3D Printing, Industry University Cooperation, Hanbat National University, Daejeon, South Korea.

Sci Technol Adv Mater ; 24(1): 2212112, 2023.

Article em En | MEDLINE | ID: mdl-37234069

Palavras-chave

Zirconium acetylacetonates; charge-trap layers; multi-bits; solution-processes; thin-film memory transistors

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Technol Adv Mater Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Coréia do Sul

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