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Interlayer Charge Transfer Induced Electrical Behavior Transition in 1D AgI@sSWCNT van der Waals Heterostructures.
Liu, Shuai; Teng, Yu; Zhang, Zhen; Lai, Junqi; Hu, Ziyi; Zhang, Wendi; Zhang, Wujun; Zhu, Juntong; Wang, Xiujun; Li, Yunfei; Zhao, Jintao; Zhang, Yong; Qiu, Song; Zhou, Wu; Cao, Kecheng; Chen, Qi; Kang, Lixing; Li, Qingwen.
Afiliação
  • Liu S; School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China.
  • Teng Y; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Zhang Z; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Lai J; School of Nano Science and Technology, University of Science and Technology of China, 96 Jinzhai Road, Hefei 230026, China.
  • Hu Z; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Zhang W; i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Zhang W; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Zhu J; School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China.
  • Wang X; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Li Y; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Zhao J; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of the Chinese Academy of Sciences, Beijing 100190, China.
  • Zhang Y; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Qiu S; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Zhou W; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Cao K; School of Nano Science and Technology, University of Science and Technology of China, 96 Jinzhai Road, Hefei 230026, China.
  • Chen Q; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Kang L; Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China.
  • Li Q; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of the Chinese Academy of Sciences, Beijing 100190, China.
Nano Lett ; 24(2): 741-747, 2024 Jan 17.
Article em En | MEDLINE | ID: mdl-38166145
ABSTRACT
The emergence of one-dimensional van der Waals heterostructures (1D vdWHs) opens up potential fields with unique properties, but precise synthesis remains a challenge. The utilization of mixed conductive types of carbon nanotubes as templates has imposed restrictions on the investigation of the electrical behavior and interlayer interaction of 1D vdWHs. In this study, we efficiently encapsulated silver iodide in high-purity semiconducting single-walled carbon nanotubes (sSWCNTs), forming 1D AgI@sSWCNT vdWHs. We characterized the semiconductor-metal transition and increased the carrier concentration of individual AgI@sSWCNTs via sensitive dielectric force microscopy and confirmed the results through electrical device tests. The electrical behavior transition was attributed to an interlayer charge transfer, as demonstrated by Kelvin probe force microscopy. Furthermore, we showed that this method of synthesizing 1D heterostructures can be extended to other metal halides. This work opens the door for the further exploration of the electrical properties of 1D vdWHs.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China