Sonochemical regulation of oxygen vacancies for Bi2WO6 nanosheet-based photoanodes to promote photoelectrochemical performance.
Nanoscale
; 16(6): 3024-3033, 2024 Feb 08.
Article
em En
| MEDLINE
| ID: mdl-38230767
ABSTRACT
Integration of oxygen vacancies (Vo) into nanostructured semiconductor-based photocatalysts has been recognized as a promising strategy for enhancing the performance of photoelectrochemical (PEC) water splitting. However, precisely controlling the Vo concentration in photocatalysts via an effective and tunable approach remains challenging. Herein, a series of optimized bismuth tungstate (Bi2WO6) nanosheet-based photoanodes with varying concentrations of Vo were prepared by a sonochemical method with in situ cavitation detection, which enables accurate manipulation of the acoustic cavitation intensity applied to the surface of Bi2WO6 photoanodes in alkaline solution. Based on the analysis of the Vo concentration and sound field characteristics, the mechanism of sonochemical regulation of Vo in Bi2WO6 nanosheets was interpreted. Specifically, the increase in Vo concentration can be attributed to the enhancement of Bi-O bond dissociation. This enhancement is influenced not only by the intensified impact of shear force and the generation of active radicals by transient cavitation, but also by the accelerated diffusion of the reactant, a result of stable cavitation. By optimizing the transient and stable cavitation intensity, a Vo-rich Bi2WO6 photoanode was obtained without altering the microstructure of Bi2WO6 nanosheets. The presence of high concentration Vo facilitates the interfacial chemical reactivity and the transmission of photogenerated carriers, leading to the drastic promotion of the PEC water splitting performance. The transient photocurrent density of the Vo-rich Bi2WO6 photoanode reaches 69.2 µA cm-2 (1.23 V vs. RHE), 7.86 times that of the untreated Bi2WO6 photoanode. Additionally, the charge injection efficiency increases to 35.4%. This work provides a controllable and effective method for defect engineering of nanostructured semiconductor-based electrodes.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale
Ano de publicação:
2024
Tipo de documento:
Article
País de afiliação:
China