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Polar Bloch points in strained ferroelectric films.
Wang, Yu-Jia; Feng, Yan-Peng; Tang, Yun-Long; Zhu, Yin-Lian; Cao, Yi; Zou, Min-Jie; Geng, Wan-Rong; Ma, Xiu-Liang.
Afiliação
  • Wang YJ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016, Shenyang, China.
  • Feng YP; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
  • Tang YL; Quantum Science Center of Guangdong-HongKong-Macau Greater Bay Area, Shenzhen, China.
  • Zhu YL; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016, Shenyang, China.
  • Cao Y; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
  • Zou MJ; Quantum Science Center of Guangdong-HongKong-Macau Greater Bay Area, Shenzhen, China.
  • Geng WR; School of Materials Science and Engineering, Hunan University of Science and Technology, Xiangtan, 411201, China.
  • Ma XL; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016, Shenyang, China.
Nat Commun ; 15(1): 3949, 2024 May 10.
Article em En | MEDLINE | ID: mdl-38729934
ABSTRACT
Topological domain structures have drawn great attention as they have potential applications in future electronic devices. As an important concept linking the quantum and classical magnetism, a magnetic Bloch point, predicted in 1960s but not observed directly so far, is a singular point around which magnetization vectors orient to nearly all directions. Here we show polar Bloch points in tensile-strained ultrathin ferroelectric PbTiO3 films, which are alternatively visualized by phase-field simulations and aberration-corrected scanning transmission electron microscopic imaging. The phase-field simulations indicate local steady-state negative capacitance around the Bloch points. The observation of polar Bloch points and their emergent properties consequently implies novel applications in future integrated circuits and low power electronic devices.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China