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Manipulating 2D Materials through Strain Engineering.
Yu, Xiangxiang; Peng, Zhuiri; Xu, Langlang; Shi, Wenhao; Li, Zheng; Meng, Xiaohan; He, Xiao; Wang, Zhen; Duan, Shikun; Tong, Lei; Huang, Xinyu; Miao, Xiangshui; Hu, Weida; Ye, Lei.
Afiliação
  • Yu X; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • Peng Z; School of Physic and Optoelectronic Engineering, Yangtze University, Jingzhou, Hubei, 434023, China.
  • Xu L; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • Shi W; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • Li Z; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • Meng X; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • He X; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • Wang Z; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • Duan S; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Tong L; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Huang X; Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, 999077, China.
  • Miao X; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • Hu W; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
  • Ye L; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
Small ; : e2402561, 2024 May 31.
Article em En | MEDLINE | ID: mdl-38818684
ABSTRACT
This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China