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Coexistence of Interacting Charge Density Waves in a Layered Semiconductor.
Lv, B Q; Zong, Alfred; Wu, Dong; Nie, Zhengwei; Su, Yifan; Choi, Dongsung; Ilyas, Batyr; Fichera, Bryan T; Li, Jiarui; Baldini, Edoardo; Mogi, Masataka; Huang, Y-B; Po, Hoi Chun; Meng, Sheng; Wang, Yao; Wang, N L; Gedik, Nuh.
Afiliação
  • Lv BQ; Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China.
  • Zong A; Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts 02139, USA.
  • Wu D; School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China.
  • Nie Z; Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai 200240, China.
  • Su Y; Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts 02139, USA.
  • Choi D; University of California at Berkeley, Department of Chemistry, Berkeley, California 94720, USA.
  • Ilyas B; Beijing Academy of Quantum Information Sciences, Beijing 100913, China.
  • Fichera BT; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Li J; Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts 02139, USA.
  • Baldini E; Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, Massachusetts 02139, USA.
  • Mogi M; Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts 02139, USA.
  • Huang YB; Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts 02139, USA.
  • Po HC; SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
  • Meng S; Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
  • Wang Y; Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts 02139, USA.
  • Wang NL; Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts 02139, USA.
  • Gedik N; Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China.
Phys Rev Lett ; 132(20): 206401, 2024 May 17.
Article em En | MEDLINE | ID: mdl-38829092
ABSTRACT
Coexisting orders are key features of strongly correlated materials and underlie many intriguing phenomena from unconventional superconductivity to topological orders. Here, we report the coexistence of two interacting charge-density-wave (CDW) orders in EuTe_{4}, a layered crystal that has drawn considerable attention owing to its anomalous thermal hysteresis and a semiconducting CDW state despite the absence of perfect Fermi surface nesting. By accessing unoccupied conduction bands with time- and angle-resolved photoemission measurements, we find that monolayers and bilayers of Te in the unit cell host different CDWs that are associated with distinct energy gaps. The two gaps display dichotomous evolutions following photoexcitation, where the larger bilayer CDW gap exhibits less renormalization and faster recovery. Surprisingly, the CDW in the Te monolayer displays an additional momentum-dependent gap renormalization that cannot be captured by density-functional theory calculations. This phenomenon is attributed to interlayer interactions between the two CDW orders, which account for the semiconducting nature of the equilibrium state. Our findings not only offer microscopic insights into the correlated ground state of EuTe_{4} but also provide a general nonequilibrium approach to understand coexisting, layer-dependent orders in a complex system.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China