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Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone.
Zhu, Jianzhang; Li, Jinxiong; Ju, Shanshan; Lu, Lei; Zhang, Shengdong; Wang, Xinwei.
Afiliação
  • Zhu J; School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, People's Republic of China.
  • Li J; School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, People's Republic of China.
  • Ju S; School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, People's Republic of China.
  • Lu L; School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, People's Republic of China.
  • Zhang S; School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, People's Republic of China.
  • Wang X; School of Integrated Circuits, Peking University, Beijing, People's Republic of China.
Nanotechnology ; 35(43)2024 Aug 12.
Article em En | MEDLINE | ID: mdl-39084235
ABSTRACT
Indium oxide (In2O3) is a promising channel material for thin-film transistors (TFTs). In this work, we develop an atomic layer deposition (ALD) process of using trimethylindium and ozone (O3) to deposit In2O3films and fabricate ultrathin In2O3TFTs. The In2O3TFTs with 4 nm channel thickness show generally good switching characteristics with a highIon/Ioffof 108, a high mobility (µFE) of 16.2cm2V-1s-1and a positive threshold voltage (Vth) of 0.48 V. Although the 4 nm In2O3TFTs exhibit short channel effect, it can be improved by adding an ALD Ga2O3capping layer to afford the bilayer In2O3/Ga2O3channel structure. The afforded In2O3/Ga2O3TFTs exhibit improved immunity to the short channel effect, with good TFT characteristics ofIon/Ioffof 107,µFEof 9.3cm2V-1s-1, and positiveVthof 2.23 V. Overall, the thermal budget of the entire process is only 400 °C, which is suitable for the display and CMOS back-end-of-line-compatible applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2024 Tipo de documento: Article