Verification of an integral figure of merit for mid-IR nonlinear crystals.

The examination and verification of a simple integral figure of merit for nonlinear crystals, taking into account different crystal properties, was studied. The examination was carried out on the basis of experimental data on the broadband sum frequency generation of CO laser radiation in ZnGeP2, BaGa2GeSe6, AgGaSe2, GaSe, and PbIn6Te10 mid-IR nonlinear crystals. Taking into account spectral and angular phase-matching bandwidths, the figure of merit provides the best agreement with the experiment and can be applied for qualitative, and even quantitative, comparison of the nonlinear crystals.

Silicon carbide--a high-transparency nonlinear material for THz applications.

Optical properties of 4H-SiC were measured using time-domain and Fourier transform spectroscopy in the range of 0.1-20 THz. A high-transparency region was found between <0.1-10 THz. Based on the obtained data and published results, the refractive indices for o-wave and e-wave were approximated in the form of Sellmeier equations for the entire transparency range. Phase matched frequency conversion was found to be possible at wavelengths from the visible through the mid-IR and further into the far-IR (THz) region beyond 17 µm. Extremely low absorption coefficient, high damage threshold, and the possibility of phase matching make this material highly suited for high power THz optics and generation.