Combining double patterning with self-assembled block copolymer lamellae to fabricate 10.5 nm full-pitch line/space patterns.

Directed self-assembly of block copolymers and self-aligned double patterning are two commonly used pitch scaling techniques to increase the density of lithographic features. In this work, both of these pitch scaling techniques were combined, enabling patterning at even higher densities. In this process, directed self-assembly of a high-χ block copolymer was used to form a line/space pattern, which served as a template for mandrels. Via these mandrels, atomic layer deposition was used to deposit a thin aluminium oxide spacer. By this method, a total pitch scaling factor of 8, equivalent to a 10.5 nm full pitch, was reached. The types of defects and the line roughness at the different steps of the process were discussed.

Ultimate suppression of thermal transport in amorphous silicon nitride by phononic nanostructure.

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4 A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Enhanced Reduction of Thermal Conductivity in Amorphous Silicon Nitride-Containing Phononic Crystals Fabricated Using Directed Self-Assembly of Block Copolymers.

Studies have demonstrated that the thermal conductivity (κ) of crystalline semiconductor materials can be reduced by phonon scattering in periodic nanostructures formed using templates fabricated from self-assembled block copolymers (BCPs). Compared to crystalline materials, the heat transport mechanisms in amorphous inorganic materials differ significantly and have been explored far less extensively. However, thermal management of amorphous inorganic solids is crucial for a broad range of semiconductor devices. Here we present the fabrication of freestanding amorphous silicon nitride (SiNx) membranes for studying κ in an amorphous solid. To form a periodic nanostructure, directed self-assembly of cylinder-forming BCPs is used to pattern in the SiNx highly ordered, hexagonally close packed nanopores with pitch and neck width down to 37.5 and 12 nm, respectively. The κ of the nanoporous SiNx membranes is 60% smaller than the classically predicted value based on just the membrane porosity. In comparison, holes with much larger neck widths and pitches patterned by e-beam lithography lead to only a slight reduction in κ, which is closer to the classical porosity-based prediction. These results demonstrate that κ of amorphous SiNx can be reduced by introducing periodic nanostructures that behave as a phononic crystal, where the relationship between the smallest dimension of the nanostructure and the length scale of the mean-free paths of the dominant, heat-carrying phonons is critical. Additionally, changing the orientation of the hexagonal array of nanopores relative to the primary direction of heat flow has a smaller impact on amorphous SiNx than was previously observed in silicon.