Controlled Fabrication of DNA Molecular Templates for In Situ Formation and Measurement of Ultrathin Metal Nanostructures.

Fabrication of ultrathin metal nanostructures usually requires some combination of high-vacuum deposition and postgrowth processing, which precludes access to nanostructures of ultrasmall cross sections for most materials. DNA nanowires (NWs) are versatile insulating templates with intrinsic sub-10 nm line width. Here, we demonstrate a method of DNA template fabrication with precise control over the location and orientation of the DNA NWs. We further demonstrate that this template can be used to support formation of ultrathin metal NWs for derivative nanodevices: a metal is incrementally deposited, and electrical transport measurement is performed in situ at each step. The results show a homogeneous metal NW is obtained at a thickness as small as 0.9 nm with a cross-section of only a few nm2. The high degree of control in the location, separation, and orientation of the DNA NWs affords this method great promise in fabricating complex nanodevices based on metal NWs.

Robust Gapless Surface State against Surface Magnetic Impurities on (Bi_{0.5}Sb_{0.5})_{2}Te_{3} Evidenced by In Situ Magnetotransport Measurements.

Despite extensive experimental and theoretical efforts, the important issue of the effects of surface magnetic impurities on the topological surface state of a topological insulator (TI) remains unresolved. We elucidate the effects of Cr impurities on epitaxial thin films of (Bi_{0.5}Sb_{0.5})_{2}Te_{3}: Cr adatoms are incrementally deposited onto the TI held in ultrahigh vacuum at low temperatures, and in situ magnetoconductivity and Hall effect measurements are performed at each increment with electrostatic gating. In the experimentally identified surface transport regime, the measured minimum electron density shows a nonmonotonic evolution with the Cr density (n_{Cr}): it first increases and then decreases with n_{Cr}. This unusual behavior is ascribed to the dual roles of the Cr as ionized impurities and electron donors, having competing effects of enhancing and decreasing the electronic inhomogeneities in the surface state at low and high n_{Cr}, respectively. The magnetoconductivity is obtained for different n_{Cr} on one and the same sample, which yields clear evidence that the weak antilocalization effect persists and the surface state remains gapless up to the highest n_{Cr}, contrary to the expectation that the deposited Cr should break the time-reversal symmetry and induce a gap opening at the Dirac point.

Electrical Spin Injection and Detection in Silicon Nanowires with Axial Doping Gradient.

The interest in spin transport in nanoscopic semiconductor channels is driven by both the inevitable miniaturization of spintronics devices toward nanoscale and the rich spin-dependent physics the quantum confinement engenders. For such studies, the all-important issue of the ferromagnet/semiconductor (FM/SC) interface becomes even more critical at nanoscale. Here we elucidate the effects of the FM/SC interface on electrical spin injection and detection at nanoscale dimensions, utilizing a unique type of Si nanowires (NWs) with an inherent axial doping gradient. Two-terminal and nonlocal four-terminal lateral spin-valve measurements were performed using different combinations from a series of FM contacts positioned along the same NW. The data are analyzed with a general model of spin accumulation in a normal channel under electrical spin injection from a FM, which reveals a distinct correlation of decreasing spin-valve signal with increasing injector junction resistance. The observation is attributed to the diminishing contribution of the d-electrons in the FM to the injected current spin polarization with increasing Schottky barrier width. The results demonstrate that there is a window of interface parameters for optimal spin injection efficiency and current spin polarization, which provides important design guidelines for nanospintronic devices with quasi-one-dimensional semiconductor channels.

Modulation of electronic properties of tin oxide nanobelts via thermal control of surface oxygen defects.

Nanomaterials made from binary metal oxides are of increasing interest because of their versatility in applications from flexible electronics to portable chemical and biological sensors. Controlling the electrical properties of these materials is the first step in device implementation. Tin dioxide (SnO2) nanobelts (NB) synthesized by the vapor-liquid-solid mechanism have shown much promise in this regard. We explore the modification of devices prepared with single crystalline NBs by thermal annealing in vacuum and oxygen, resulting in a viable field-effect transistor (FET) for numerous applications at ambient temperature. An oxygen annealing step initially increases the device conductance by up to a factor of 105, likely through the modification of the surface defects of the NB, leading to Schottky barrier limited devices. A multi-step annealing procedure leads to further increase of the conductance by approximately 350% and optimization of the electronic properties. The effects of each step is investigated systematically on a single NB. The optimization of the electrical properties of the NBs makes possible the consistent production of channel-limited FETs and control of the device performance. Understanding these improvements on the electrical properties over the as-grown materials provides a pathway to enhance and tailor the functionalities of tin oxide nanostructures for a wide variety of optical, electronic, optoelectronic, and sensing applications that operate at room temperature.

Theory and simulation of diffusion-influenced, stochastically gated ligand binding to buried sites.

We consider the diffusion-influenced rate coefficient of ligand binding to a site located in a deep pocket on a protein; the binding pocket is flexible and can reorganize in response to ligand entrance. We extend to this flexible protein-ligand system a formalism developed previously [A. M. Berezhkovskii, A, Szabo, and H.-X. Zhou, J. Chem. Phys. 135, 075103 (2011)] for breaking the ligand-binding problem into an exterior problem and an interior problem. Conformational fluctuations of a bottleneck or a lid and the binding site are modeled as stochastic gating. We present analytical and Brownian dynamics simulation results for the case of a cylindrical pocket containing a binding site at the bottom. Induced switch, whereby the conformation of the protein adapts to the incoming ligand, leads to considerable rate enhancement.

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

A solvable model for the diffusion and reaction of neurotransmitters in a synaptic junction.

BACKGROUND: The diffusion and reaction of the transmitter acetylcholine in neuromuscular junctions and the diffusion and binding of Ca2+ in the dyadic clefts of ventricular myocytes have been extensively modeled by Monte Carlo simulations and by finite-difference and finite-element solutions. However, an analytical solution that can serve as a benchmark for testing these numerical methods has been lacking. RESULT: Here we present an analytical solution to a model for the diffusion and reaction of acetylcholine in a neuromuscular junction and for the diffusion and binding of Ca2+ in a dyadic cleft. Our model is similar to those previously solved numerically and our results are also qualitatively similar. CONCLUSION: The analytical solution provides a unique benchmark for testing numerical methods and potentially provides a new avenue for modeling biochemical transport.