RESUMEN
Metamaterial (MM) perfect absorbers are realised over various spectra from visible to microwave. Recently, different approaches have been explored to integrate tunability into MM absorbers. Particularly, tuning has been illustrated through electrical-, thermal-, and photo-induced changes to the permittivity of the active medium within MM absorbers. However, the intricate design, expensive nanofabrication process, and the volatile nature of the active medium limit the widespread applications of MM absorbers. Metal-dielectric stack layered hyperbolic metamaterials (HMMs) have recently attracted much attention due to their extraordinary optical properties and rather simple design. Herein, we experimentally realised a reconfigurable HMM perfect absorber based on alternating gold (Au) and Ge2Sb2Te5 (GST225) layers for the near-infrared (N-IR) region. It shows that a red-shift of 500 nm of the absorptance peak can be obtained by changing the GST225 state from amorphous to crystalline. The nearly perfect absorptance is omnidirectional and polarisation-independent. Additionally, the absorptance peak can be reversibly switched in just five nanoseconds by re-amorphising the GST225, enabling a dynamically reconfigurable HMM absorber. Experimental data are validated numerically using the finite-difference time-domain method. The absorber fabricated using our strategy has advantages of being reconfigurable, uncomplicated, and lithography-free over conventional MM absorbers, which may open up a new path for applications in energy harvesting, photodetectors, biochemical sensing, and thermal camouflage techniques.
RESUMEN
To date, the second harmonic generation (SHG) has a great effect on photonic devices. However, it is a formidable challenge to achieve reconfigurable SHG. Hereby, we experimentally demonstrate the SHG response from the oriented Ge2Sb2Te5 (GST) grains induced by polarized laser pulses for the first time. The orientation of GST grains is found to be perpendicular to the polarization direction of the pump laser. Such unique ordered structures result in a periodic change of SHG intensity with the input polarization angle of the pump laser rotating every 180°. These findings may pave avenues for generating nonlinear optical sources with a simple process, scalability, and switchable functionality.
RESUMEN
The objective of this work is to demonstrate the usefulness of fractional factorial design for optimizing the crystal quality of chalcogenide van der Waals (vdW) crystals. We statistically analyze the growth parameters of highly c axis oriented Sb2Te3 crystals and Sb2Te3-GeTe phase change vdW heterostructured superlattices. The statistical significance of the growth parameters of temperature, pressure, power, buffer materials, and buffer layer thickness was found by fractional factorial design and response surface analysis. Temperature, pressure, power, and their second-order interactions are the major factors that significantly influence the quality of the crystals. Additionally, using tungsten rather than molybdenum as a buffer layer significantly enhances the crystal quality. Fractional factorial design minimizes the number of experiments that are necessary to find the optimal growth conditions, resulting in an order of magnitude improvement in the crystal quality. We highlight that statistical design of experiment methods, which is more commonly used in product design, should be considered more broadly by those designing and optimizing materials.
RESUMEN
The effect of oxygen on the local structure of Ge atoms in GeTe-O materials has been investigated. Oxygen leads to a significant modification to the vibrational modes of Ge octahedra, which results from a decrease in its coordination. We find that a defective octahedral Ge network is the crucial fingerprint for rapid and reversible structural transitions in GeTe-based phase change materials. The appearance of oxide Raman modes confirms phase separation into GeO and TeO at high level O doping. Counterintuitively, despite the increase in crystallization temperature of oxygen doped GeTe-O phase change materials, when GeTe-O materials are used in electrical phase change memory cells, the electrical switching energy is lower than the pure GeTe material. This switching energy reduction is ascribed to the smaller change in volume, and therefore smaller enthalpy change, for the oxygen doped GeTe materials.