Polarized and Bright Telecom C-Band Single-Photon Source from InP-Based Quantum Dots Coupled to Elliptical Bragg Gratings.

Bright, polarized, and high-purity single-photon sources in telecom wavelengths are crucial components in long-distance quantum communication, optical quantum computation, and quantum networks. Semiconductor InAs/InP quantum dots (QDs) combined with photonic cavities provide a competitive path, leading to optimal single-photon sources in this range. Here, we demonstrate a bright and polarized single-photon source operating in the telecom C-band based on an elliptical Bragg grating (EBG) cavity. With a significant Purcell enhancement of 5.25 ± 0.05, the device achieves a polarization ratio of 0.986, a single-photon purity of g2(0) = 0.078 ± 0.016, and a single-polarized photon collection efficiency of ∼24% at the first lens (NA = 0.65) without blinking. These findings suggest that C-band QD-based single-photon sources are potential candidates for advancing quantum communication.

Temperature dependence of refractive indices of Al0.9Ga0.1As and In0.53Al0.1Ga0.37As in the telecommunication spectral range.

In this work, we determine the temperature dependence of refractive indices of In0.53Al0.1Ga0.37As and Al0.9Ga0.1As semiconductor alloys at telecommunication wavelengths in the range from room temperature down to 10 K. For that, we measure the temperature-dependent reflectance of two structures: with an Al0.9Ga0.1As/GaAs distributed Bragg reflector (DBR) designed for 1.3 µm and with an In0.53Al0.1Ga0.37As/InP DBR designed for 1.55 µm. The obtained experimental results are compared to DBR reflectivity spectra calculated within the transfer matrix method to determine refractive index values. We further show that changes due to the thermal expansion of the DBR layers are negligible for our method.

Luminescent Properties of Phosphonate Ester-Supported Neodymium(III) Nitrate and Chloride Complexes.

This study examines the synthesis of two geminal bisphosphonate ester-supported Ln3+ complexes [Ln(L3)2(NO3)3] (Ln = Nd3+ (5), La3+ (6)) and optical properties of the neodymium(III) complex. These results are compared to known mono-phosphonate ester-based Nd3+ complexes [Nd(L1/L2)3X3]n (X = NO3-, n = 1; Cl-, n = 2) (1-4). The optical properties of Nd3+ compounds are determined by micro-photoluminescence (µ-PL) spectroscopy which reveals three characteristic metal-centered emission bands in the NIR region related to transitions from 4F3/2 excited state. Additionally, two emission bands from 4F5/2, 2H9/2 → 4IJ (J = 11/2, 13/2) transitions were observed. PL spectroscopy of equimolar complex solutions in dry dichloromethane (DCM) revealed remarkably higher emission intensity of the mono-phosphonate ester-based complexes in comparison to their bisphosphonate ester congener. The temperature-dependent PL measurements enable assignment of the emission lines of the 4F3/2 → 4I9/2 transition. Furthermore, low-temperature polarization-dependent measurements of the transitions from R1 and R2 Stark sublevel of 4F3/2 state to the 4I9/2 state for crystals of [Nd(L3)2(NO3)3] (5) are discussed.

Spin memory effect in charged single telecom quantum dots: erratum.

This erratum corrects the value of the wetting layer thickness provided in our Article [Opt. Express29, 34024 (2021)10.1364/OE.438708]. This misprint does not influence the results and conclusions presented in the original Article.

Spin memory effect in charged single telecom quantum dots.

Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a very dense ladder of excited states providing relatively easy quasi-resonant optical excitation, and together with telecom wavelengths emission they bring quantum gates and memories closer to compatibility with fiber-optic communication.

Azido-Functionalized Aromatic Phosphonate Esters in RPOSS-Cage-Supported Lanthanide Ion (Ln = La, Nd, Dy, Er) Coordination.

Within this work, a modified preparation of diethyl 4-azidobenzylphosphonate (L1) is presented and the family of 4- or 4'-azido-substituted aromatic phosphonate esters is increased by three new ligand platforms: diisopropyl 4-azidobenzylphosphonate (L2), diisopropyl ((4'-azido-[1,1'-biphenyl]-4-yl)methyl)phosphonate (L3), and diisopropyl 4-azido-2,3,5,6-tetrafluorobenzylphosphonate (L4), which exhibit an anomalous splitting of the N3 stretching vibrations. Subsequent coordination to the in situ generated RPOSS (polyhedral oligomeric silsesquioxane)-cage-supported lanthanide precursors [(Ln{RPOSS})2(THF)m] (P1-P6) (Ln = La, Nd, Dy, Er; R = iBu, Ph; m = 0, 1) yields complexes of the general formula [Ln{RPOSS}(L1-L4)n(S1)x(THF)m] (1-30) (n = 2, 3; x = 0, 1; m = 0-2) retaining the azide unit for future semiconductor surface immobilization. Because the latter compounds are mostly oils or viscous waxes, preliminary solution-state structure elucidations via DOSY-ECC-MW estimations have been carried out which are in accordance with 1H NMR integral ratios as well as solid-state structures, where available. Moreover, the optical properties of the Nd, Dy, and Er derivatives of complexes 1-30 are examined in the visible and NIR spectral regions, where applicable.

Enhancing the optical excitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna.

We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of 8. Spectrally and temporally resolved photoluminescence measurements prove an increase of the quantum dot's excitation rate.

Magneto-Optical Characterization of Trions in Symmetric InP-Based Quantum Dots for Quantum Communication Applications.

Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy-grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of an external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 µeV/T2, and 8-15 µeV/T2, respectively out-of-plane and in-plane of the dots. The determined values of diamagnetic shifts are related to the anisotropy of dot sizes. Trion g-factors are measured to be relatively small, in the range of 0.3-0.7 and 0.5-1.3, in both configurations, respectively. Analysis of single carrier g-factors, based on the formalism of spin-correlated orbital currents, leads to similar values for hole and electron of ~0.25 for Voigt and ge ≈ -5; gh ≈ +6 for Faraday configuration of the magnetic field. Values of g-factors close to zero measured in Voigt configuration make the investigated dots promising for electrical tuning of the g-factor sign, required for schemes of single spin control in qubit applications.

Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy.

We present an experimental study on the optical quality of InAs/InP quantum dots (QDs). Investigated structures have application relevance due to emission in the 3rd telecommunication window. The nanostructures are grown by ripening-assisted molecular beam epitaxy. This leads to their unique properties, i.e., low spatial density and in-plane shape symmetry. These are advantageous for non-classical light generation for quantum technologies applications. As a measure of the internal quantum efficiency, the discrepancy between calculated and experimentally determined photon extraction efficiency is used. The investigated nanostructures exhibit close to ideal emission efficiency proving their high structural quality. The thermal stability of emission is investigated by means of microphotoluminescence. This allows to determine the maximal operation temperature of the device and reveal the main emission quenching channels. Emission quenching is predominantly caused by the transition of holes and electrons to higher QD's levels. Additionally, these carriers could further leave the confinement potential via the dense ladder of QD states. Single QD emission is observed up to temperatures of about 100 K, comparable to the best results obtained for epitaxial QDs in this spectral range. The fundamental limit for the emission rate is the excitation radiative lifetime, which spreads from below 0.5 to almost 1.9 ns (GHz operation) without any clear spectral dispersion. Furthermore, carrier dynamics is also determined using time-correlated single-photon counting.

Functionalised phosphonate ester supported lanthanide (Ln = La, Nd, Dy, Er) complexes.

A series of phosphonate ester supported lanthanide complexes bearing functionalities for subsequent immobilisation on semiconductor surfaces are prepared. Six phosphonate ester ligands (L1-L6) with varying aromatic residues are synthesised. Subsequent complexation with lanthanide chloride or -nitrate precursors (Ln = La, Nd, Dy, Er) affords the corresponding mono- or dimeric lanthanide model complexes [LnX3(L1-L3 or L5-L6)3]n (X = NO3, Cl; n = 1 (Nd, Dy, Er), 2 (La, Nd)) or [LnCl2Br(L4-Br)2(L4-Cl)]n (n = 1 (Nd, Dy, Er), 2 (La, Nd)) (1-32). All compounds are thoroughly characterised, and their luminescence properties are investigated in the visible and NIR spectral regions, where applicable.

Epitaxial quantum dots in stretchable optical microcavities.

Arrays of GaAs microring optical resonators with embedded InGaAs quantum dots (QDs) are placed on top of Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) piezoelectric actuators, which allow the microcavities to be reversibly "stretched" or "squeezed" by applying relatively large biaxial stresses at low temperatures. The emission energy of both QDs and optical modes red- or blue- shift depending on the strain sign, with the QD emission shifting more rapidly than the optical mode with applied strain. The QD energy shifts are used to estimate the strain in the structures based on linear deformation potential theory and the finite element method. The shift of the modes is attributed to both the physical deformation and the change in refractive index due to the photoelastic effect. Remarkably, excitonic emissions from different QDs are observed to shift at different rates, implying that this technique can be used to bring spatially separated excitons into resonance.

HDL-C, ApoA1 and VLDL-TG as biomarkers for the carotid plaque presence in patients with metabolic syndrome.

AIM: Hypercholesterolemia and hyper LDL-C are associated with the atherosclerosis (AS). The current study was performed to evaluate the implication of the others lipoproteins (HDL, LDL, VLDL) and apolipoproteins (ApoA1, ApoB100) with subclinical atherosclerosis (carotid plaque) in patients with metabolic syndrome (MetS) free from cardiovascular disease (CVD). METHODS: Prospective transversal study was conducted in patients with MetS free from cardiovascular disease (CVD). The lipids, lipoproteins and apolipoproteins were measured. The lipoproteins (HDL, LDL, VLDL) were obtained by the precipitation method. The carotid plaque (CP) was evaluated by ultrasonography, method for assessing AS. Logistic regression and analysis tree were used to look for the association and the incrimination of the lipoproteins with the presence of CP. RESULTS: The CP incidence was 60% among the participants, 34.29% on the right and the left plaque against 25.71% for only one plaque. The HDL-C was the only lipoprotein associated with the CP after adjustment of the age, the sex and BMI (OR: 0.007 P: 0.046) with the logistic regression analysis, HDL-C (<0.35 g/l), ApoA1 (<1.43 g/l) and VLDL-TG (>0.656 g/l) are implicated in the presence of CP with the analysis tree analysis. CONCLUSION: Lower level of HDL-C is associated with CP, HDL-C, ApoA1, and high level VLDL-TG but not total cholesterol, and LDL-Care useful parameters in the assessment of initial atherosclerosis in metabolic syndrome.

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature.

The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.

Self-Assembled Quantum Dot Molecules.

Semiconductor quantum dot molecules (QDMs) are systems composed of two or more closely spaced and interacting QDs. QDMs are receiving much attention both as playground for studying coupling and energy transfer processes between "artificial atoms" and as new systems, which substantially extend the range of possible applications of QDs. QDMs can be conveniently fabricated by self-assembly either through chemical synthesis or epitaxial growth. Although QDMs relying on the random occurrence of nearby QDs can be used for fundamental studies, special fabrication protocols must be used to create QDMs with well-defined properties. In this article, we focus on self-assembled QDMs obtained by epitaxial growth and embedded in a semiconductor matrix, which are appealing for the possible realization of quantum gates based on two-level systems defined in QDs. We provide a comprehensive overview of the development and current stage of the research on QDMs composed of vertically (in the growth direction) or laterally (in the growth plane) aligned QDs. The review highlights some recent milestone works and points out the challenges and future directions in the field.

Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate.

Triggered single-photon emission from a single CdTe quantum dot (QD) grown on Si(001) substrate is demonstrated for the first time. The emission wavelength of QDs can be tuned in a wide spectral range (more than 8 meV) using a focused laser beam. A nearly perfect single-photon emission from the exciton lines is preserved even after energy tuning. The lifetime is also measured before and after laser processing, and no appreciable change is observed.

Electrospray ion beam deposition: soft-landing and fragmentation of functional molecules at solid surfaces.

The ion beam deposition (IBD) of rhodamine dye molecules on solid surfaces in high vacuum is explored in order to characterize the possibility of fabricating molecular coatings or nanostructures from nonvolatile molecules. Molecular ion beams with a well-defined composition are deposited on silicon oxide surfaces with a controlled kinetic energy. Photoluminescence spectroscopy and time-of-flight secondary ion mass spectrometry (TOF-SIMS) are employed in order to characterize the sample with respect to coverage, homogeneity, and the fraction of intact landed ions (soft-landing ratio). We find that homogeneous rhodamine films of defined composition can be produced at energies of 2-100 eV. The coverage is found to be proportional to the ion dose. Soft-landing is observed for energies up to 35 eV.

Optical properties of a wrinkled nanomembrane with embedded quantum well.

A wrinkled nanomembrane with embedded quantum well (QW), fabricated by the partial release and bond back of epitaxial layers upon underetching, is investigated by spatially resolved micro-photoluminescence spectroscopy. From the observed QW transition energies and calculations based on the linear deformation potential theory, we find that the bonded back regions are fully relaxed and act on the strain state of the wrinkled QW. Light emission enhancement observed in the wrinkled QW is explained by interference contrast theory.