Controlling dielectrics with the electric field of light.

The control of the electric and optical properties of semiconductors with microwave fields forms the basis of modern electronics, information processing and optical communications. The extension of such control to optical frequencies calls for wideband materials such as dielectrics, which require strong electric fields to alter their physical properties. Few-cycle laser pulses permit damage-free exposure of dielectrics to electric fields of several volts per ångström and significant modifications in their electronic system. Fields of such strength and temporal confinement can turn a dielectric from an insulating state to a conducting state within the optical period. However, to extend electric signal control and processing to light frequencies depends on the feasibility of reversing these effects approximately as fast as they can be induced. Here we study the underlying electron processes with sub-femtosecond solid-state spectroscopy, which reveals the feasibility of manipulating the electronic structure and electric polarizability of a dielectric reversibly with the electric field of light. We irradiate a dielectric (fused silica) with a waveform-controlled near-infrared few-cycle light field of several volts per angström and probe changes in extreme-ultraviolet absorptivity and near-infrared reflectivity on a timescale of approximately a hundred attoseconds to a few femtoseconds. The field-induced changes follow, in a highly nonlinear fashion, the turn-on and turn-off behaviour of the driving field, in agreement with the predictions of a quantum mechanical model. The ultrafast reversibility of the effects implies that the physical properties of a dielectric can be controlled with the electric field of light, offering the potential for petahertz-bandwidth signal manipulation.

Ultrafast evolution of the excited-state potential energy surface of TiO2 single crystals induced by carrier cooling.

We investigate the influence of carrier cooling dynamics in TiO(2) on the excited-state potential energy surface along the A(1g) optical phonon coordinate after above band-gap excitation using ultrashort ultraviolet pulses. The large amplitude coherent oscillation observed in a pump-probe transient reflectivity measurement shows a phase shift of -0.2π with respect to a purely instantaneous displacive excitation. The dynamic evolution of the potential energy surface minimum of the coherent phonon coordinate is explored using accurate density functional theory calculations, which confirm a shift of the potential energy surface minimum upon resonant laser excitation and reveal a significant positive contribution to the displacive force due to the cooling of the excited hot electron-hole plasma. We show that this noninstantaneous effect can quantitatively explain the experimentally observed phase using reasonable assumptions for the parameters characterizing the excited carriers. Our work demonstrates that the fast equilibration dynamics of laser-excited nonequilibrium carrier populations can have a pronounced effect on the initial structural response of crystalline solids.

Dynamics of the photoinduced insulator-to-metal transition in a nickelate film.

Material properties can be controlled via strain, pressure, chemical composition, or dimensionality. Nickelates are particularly susceptible due to their strong variations of the electronic and magnetic properties on such external stimuli. Here, we analyze the photoinduced dynamics in a single crystalline NdNiO3 film upon excitation across the electronic gap. Using time-resolved reflectivity and resonant x-ray diffraction, we show that the pump pulse induces an insulator-to-metal transition, accompanied by the melting of the charge order. Finally, we compare our results with similar studies in manganites and show that the same model can be used to describe the dynamics in nickelates, hinting towards a unified description of these photoinduced electronic ordering phase transitions.