Applicability of a linear diffusion model to determination of the height of the potential barrier at the grain boundaries of Fe-doped SrTiO3.

The potential barrier formed at the grain boundaries in Fe-doped SrTiO3 is reported to be one of the main reasons of the exceptionally large grain boundary resistivity of the material. Of particular interest is thus how to accurately quantify the potential barrier height, Ψgb, in such electronic conductors. This study aims to expand the applicability of a linear diffusion model (namely I-V model) to electronic conductors. The I-V model has previously proven its success in accurate determination of Ψgb in popular ionic conductors. By employing 1 mol% Fe-doped SrTiO3 as a model material, the current-voltage characteristics of the grain boundary investigated demonstrate the power law behavior predicted by the I-V model, verifying the applicability of this model. The Ψgb estimated from the I-V model at different temperatures are compared with those from the resistivity ratio of the grain boundary to the bulk. The resistivity ratio has been exclusively used to determine Ψgb in various conductors over several decades and yet has limitations in its accuracy. The Ψgb determined by the I-V model are found to be substantially lower than those from the resistivity ratio; such discrepancy implies that the potential barrier only partially contributes to the high grain boundary resistivity of a lightly doped electron-hole conducting SrTiO3.

The exceptionally large height of the potential barrier at the grain boundary of a LaGaO3-based solid solution deduced from a linear diffusion model.

The extent of the influence of space charge on the electric current through the grain boundary in solid electrolytes can be parameterized by the grain boundary potential, i.e. the height of the potential barrier formed at the grain boundary. Previously the value of this parameter has been estimated exclusively by the ratio of the grain boundary resistivity to the bulk counterpart over several decades. We recently demonstrated that it can be alternatively determined by analyzing the current-voltage characteristic of the grain boundary. Furthermore, we theoretically justified that the conventional method is in fact a subset of the new method, therefore, the latter is a more reliable and comprehensive approach to determine the grain boundary potential. Here, we present the experimental results that verify our theoretical justification. The values of the grain boundary potential determined for 1 mol% Sr-doped LaGaO3 (LSG1) employing both methods are in excellent agreement with one another. Such a consistency has not been reported for other solid electrolytes to date and we provide an explanation for it. Our data also indicate that for the case of LSG1, the Nernst-Einstein relation is preserved at the electric field exceeding 900 kV cm-1.

Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

Determination of band alignment in the single-layer MoS2/WSe2 heterojunction.

The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

Ultrafast generation of pseudo-magnetic field for valley excitons in WSe2 monolayers.

The valley pseudospin is a degree of freedom that emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2). The capability to manipulate it, in analogy to the control of spin in spintronics, can open up exciting opportunities. Here, we demonstrate that an ultrafast and ultrahigh valley pseudo-magnetic field can be generated by using circularly polarized femtosecond pulses to selectively control the valley degree of freedom in monolayer MX2. Using ultrafast pump-probe spectroscopy, we observed a pure and valley-selective optical Stark effect in WSe2 monolayers from the nonresonant pump, resulting in an energy splitting of more than 10 milli-electron volts between the K and K' valley exciton transitions. Our study opens up the possibility to coherently manipulate the valley polarization for quantum information applications.

Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling.

The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we have studied the transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydrogen intercalation by driving the device into the non-equilibrium regime. Interestingly, we have demonstrated that the energy relaxation time of the device without hydrogen intercalation is two orders of magnitude shorter than that with hydrogen intercalation, suggesting application of epitaxial graphene in high-frequency devices which require outstanding heat exchange with an outside cooling source.