Tunable broadband terahertz absorber based on a single-layer graphene metasurface.

In this paper, a broadband and tunable terahertz absorber based on a graphene metasurface in a sandwiched structure is introduced. A single-layered graphene patterned with hollow-out squares is applied in this design, which is continuously connected to provide convenience for electrical tuning and fabrication. Plasmonic coupling and hybridization inside the graphene pattern can significantly enhance the absorption bandwidth. Moreover, polarization-insensitive and omnidirectional performances are also guaranteed by the symmetrical design. Full wave simulations demonstrate that the absorber exhibits over 90% absorbance within 1.14∼3.31 THz with a fractional bandwidth up to 97.5%. The device reveals tunable absorbance from 14% to almost 100% by manipulating the graphene chemical potential from 0 to 0.9 eV. When the incident angle sweeps up to 55°, the absorbance remains more than 90% from 1.77 to 3.42 THz for TE polarization, while over 90% absorbance maintains around 3.3 THz for TM polarization. These superior abilities guarantee the applicability of the presented absorber in THz cloaking, tunable sensor and photovoltaic devices.

Dual-layer achromatic metalens design with an effective Abbe number.

Planar achromatic metalenses with a thickness of the order of wavelength have attracted much attention for their potential applications in ultra-compact optical devices. However, realizing single-layer achromatic metalenses across a wide bandwidth requires that the corresponding meta-atoms have complex cross-sections for correct phase profile and dispersion compensation. Herein, we introduce an effective Abbe number and use lens maker equations to design a dual-layer achromatic metalens in which we compensate the dispersion by using a plano-convex liked metalens combined with a plano-concave liked metalens. The stacked metalens are designed based on simple high refractive index dielectric cylindrical meta-atoms with different radii, which simplify the design and fabrication processes. We demonstrate that a dual-layer achromatic metalens has a small focal length difference across the visible wavelength range and an average focusing efficiency above 50%, which proves that the design method is promising for many potential applications in multi-functional flat optical devices.

d'Alembert-Schrödinger hybrid simulation for laser-induced multiquantum state transitions in a three-dimensional artificial atom.

In this Letter, a d'Alembert-Schrödinger hybrid method is proposed to analyze the transient interaction between the incident electromagnetic control pulse and the electron. This hybrid method is based on the d'Alembert equation, which describes the propagation of the electromagnetic field and the time-dependent Schrödinger equation, which describes the action of the electron. Moreover, the finite-difference time-domain method is used to solve those equations. In our simulation, using the presented hybrid equations and the control equation of the quantum state, a scheme is presented to design laser pulses to control discrete quantum states in a three-dimensional artificial atom model. Excitingly, the laser pulses have been successfully designed for the perfect four quantum states' transition for the first time. With that, the spatiotemporal distribution for the probability density of an electron wave packet is showed in detail to describe the laser-induced transition process of quantum states.

Design of random and sparse metalens with matrix pencil method.

We propose a matrix pencil method for designing one- or two- dimensional (1D or 2D) metalenses with randomly distributed meta-atoms. In contrast to the standard random synthesis algorithm that only randomizes the position of the meta-atoms, the proposed method designs both the position and phase of each meta-atom rigorously. Several all-dielectric random metalenses, in both 1D and 2D operating at 220 GHz, are presented by using our proposed algorithm. Minimum reduction of focusing efficiency can be achieved with respect to a standard metalens with periodically arranged meta-atoms. In contrast to previously reported random metalenses, our random metalenses achieve much higher efficiency, while staying polarization-independent. This synthesis method will pave a way for future random-metasurface-based device designs, which could have more degrees of freedom to information multiplexing.

Tuning electronic and optical properties of arsenene/C3N van der Waals heterostructure by vertical strain and external electric field.

Searching for new van der Waals (vdW) heterostructure with novel electronic and optical properties is of great interest and importance for the next generation of devices. By using first-principles calculations, we show that the electronic and optical properties of the arsenene/C3N vdW heterostructure can be effectively modulated by applying vertical strain and external electric field. Our results suggest that this heterostructure has an intrinsic type-II band alignment with an indirect bandgap of 0.16 eV, facilitating the separation of photogenerated electron-hole pairs. The bandgap in the heterostructure can be tuned from 0-0.35 eV via the strain, experiencing an indirect-to-direct bandgap transition. Moreover, the bandgap of the heterostructure varies linearly with respect to a moderate external electric field, and the semiconductor-to-metal transition can be realized in the presence of a strong electric field. The calculated band alignment and the optical absorption reveal that the arsenene/C3N heterostructure could present excellent light-harvesting performance. Our designed vdW heterostructure is expected to have great potential applications in nanoelectronic devices and photovoltaics.

Monolayered Silicon and Germanium Monopnictide Semiconductors: Excellent Stability, High Absorbance, and Strain Engineering of Electronic Properties.

The discovery of stable two-dimensional (2D) semiconductors with exotic electronic properties is crucial to the future electronic technologies. Using the first-principles calculations, we predict the monolayered Silicon- and Germanium-monopnictides as a new class of semiconductors owning excellent dynamical and thermal stabilities, prominent anisotropy, and high possibility of experimental exfoliation. These semiconductors, including the monolayered SiP, SiAs, GeP, and GeAs, possess wide bandgaps of 2.08-2.64 eV obtained by hybrid functional calculation. Under small uniaxial strains (-2 to 3%), dramatic modulations of their band structures are observed, and furthermore, all the 2D monolayers (MLs) can be transformed between indirect and direct semiconductors. The monolayered GeAs and SiP exhibits extraordinary optical absorption in the range of visible and ultraviolet (UV) light spectra, respectively. The exfoliation energies of these monolayers are comparable to graphene, implying a strong probability of successful fabrication by mechanical exfoliation. These intriguing properties of the monolayered silicon- and germanium-monopnictides, combined with their highly stable structures, offer tremendous opportunities for electronic and optoelectronic devices working under UV-visible spectrum.