RESUMEN
The interaction between oxygen and samarium (Sm) on the well-ordered thin Al2O3 film grown on Ni3Al(111) has been investigated by X-ray photoelectron spectroscopy and synchrotron radiation photoemission spectroscopy. At Sm coverage higher than one monolayer, exposure of oxygen to the Sm films at room temperature leads to the formation of both samarium peroxide (O2(2-)) states and regular samarium oxide (O(2-)) states. By contrast, when exposing O2 to Sm film less than one monolayer on Al2O3, no O2(2-) can be observed. Upon heating to higher temperatures, these metastable O2(2-) states dissociate, supplying active O atoms which can diffuse through the Al2O3 thin film to further oxidize the underlying Ni3Al(111) substrate, leading to the significant increase of the Al2O3 thin film thickness. Therefore, it can be concluded that Sm, presumably in its peroxide form, acts as a catalyst for the further oxidation of the Ni3Al substrate by supplying the active oxygen species at elevated temperatures.
RESUMEN
The growth and electronic structure of vapor-deposited Sm on a well-ordered Al(2)O(3)/Ni(3)Al(111) ultrathin film under ultrahigh vacuum conditions at room temperature have been studied comprehensively using synchrotron radiation photoemission spectroscopy, X-ray photoelectron spectroscopy, work function measurements, scanning tunneling microscopy, and low-energy electron diffraction. Our results indicate that at room temperature Sm grows in a layer-by-layer fashion up to at least 1 ML, followed by three-dimensional growth. The interaction of Sm with Al(2)O(3) thin films leads to an initial oxidation of Sm, accompanied by a parallel reduction of the Al(2)O(3) substrate. Both the oxidation states of Sm(2+) and Sm(3+) are found at low coverage (<1 ML). The concentration of Sm(2+) saturates below 0.4 ML, while that of Sm(3+) keeps increasing until the metallic state of Sm appears at high coverages.