1.
Nurs Times
; 69(25): 806-9, 1973 Jun 21.
Artículo
en Inglés
| MEDLINE
| ID: mdl-4732099
2.
Nanotechnology
; 19(5): 055205, 2008 Feb 06.
Artículo
en Inglés
| MEDLINE
| ID: mdl-21817603
RESUMEN
Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.