Intersubband Polariton-Polariton Scattering in a Dispersive Microcavity.

The ultrafast scattering dynamics of intersubband polaritons in dispersive cavities embedding GaAs/AlGaAs quantum wells are studied directly within their band structure using a noncollinear pump-probe geometry with phase-stable midinfrared pulses. Selective excitation of the lower polariton at a frequency of ∼25 THz and at a finite in-plane momentum k_{‖} leads to the emergence of a narrowband maximum in the probe reflectivity at k_{‖}=0. A quantum mechanical model identifies the underlying microscopic process as stimulated coherent polariton-polariton scattering. These results mark an important milestone toward quantum control and bosonic lasing in custom-tailored polaritonic systems in the mid and far infrared.

Realization of Harmonic Oscillator Arrays with Graded Semiconductor Quantum Wells.

The harmonic oscillator is a foundational concept in both theoretical and experimental quantum mechanics. Here, we demonstrate harmonic oscillators in a semiconductor platform by faithfully implementing continuously graded alloy semiconductor quantum wells. Unlike current technology, this technique avoids interfaces that can hamper the system and allows for the production of multiwell stacks several micrometers thick. The experimentally measured system oscillations are at 3 THz for two structures containing 18 and 54 parabolic quantum wells. Absorption at room temperature is achieved: this is as expected from a parabolic potential and is unlike square quantum wells that require cryogenic operation. Linewidths below 11% of the central frequency are obtained up to 150 K, with a 5.6% linewidth obtained at 10 K. Furthermore, we show that the system correctly displays an absence of nonlinearity despite electron-electron interactions-analogous to the Kohn theorem. These high-quality structures already open up several new experimental vistas.

High-speed THz spectroscopic imaging at ten kilohertz pixel rate with amplitude and phase contrast.

By combining the advantages of the high-speed ASOPS technology and efficient THz generation, we have realized a high-speed laser-based spectroscopic THz imaging system with more than 10,000 pixels per second acquisition speed and an excellent signal-to-noise ratio of more than 100. Unlike THz line cameras or mm-wave intensity detectors, the present device allows for a much higher spatial resolution and attributes each imaging pixel with phase and amplitude information up to several THz while simultaneously maintaining a very high scanning speed unmatched by any other technique presented so far. The high-speed acquisition allows for samples to be scanned even at sample velocities of 5 m/s or higher while preserving the fundamental resolution limit of the THz radiation, which is on the order of 500 µm in the present case.

III-nitride on silicon electrically injected microrings for nanophotonic circuits.

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm2 output power density at 20 mA from such microrings with diameters of 30 to 50 µm. The first steps towards achieving an integrated photonic circuit are demonstrated.

Engineered far-fields of metal-metal terahertz quantum cascade lasers with integrated planar horn structures.

The far-field emission profile of terahertz quantum cascade lasers (QCLs) in metal-metal waveguides is controlled in directionality and form through planar horn-type shape structures, whilst conserving a broad spectral response. The structures produce a gradual change in the high modal confinement of the waveguides and permit an improved far-field emission profile and resulting in a four-fold increase in the emitted output power. The two-dimensional far-field patterns are measured at 77 K and are agreement in with 3D modal simulations. The influence of parasitic high-order transverse modes is shown to be controlled by engineering the horn structure (ridge and horn widths), allowing only the fundamental mode to be coupled out.

Extraction-controlled terahertz frequency quantum cascade lasers with a diagonal LO-phonon extraction and injection stage.

We report an extraction-controlled terahertz (THz)-frequency quantum cascade laser design in which a diagonal LO-phonon scattering process is used to achieve efficient current injection into the upper laser level of each period and simultaneously extract electrons from the adjacent period. The effects of the diagonality of the radiative transition are investigated, and a design with a scaled oscillator strength of 0.45 is shown experimentally to provide the highest temperature performance. A 3.3 THz device processed into a double-metal waveguide configuration operated up to 123 K in pulsed mode, with a threshold current density of 1.3 kA/cm2 at 10 K. The QCL structures are modeled using an extended density matrix approach, and the large threshold current is attributed to parasitic current paths associated with the upper laser levels. The simplicity of this design makes it an ideal platform to investigate the scattering injection process.

Electrically pumped photonic-crystal terahertz lasers controlled by boundary conditions.

Semiconductor lasers based on two-dimensional photonic crystals generally rely on an optically pumped central area, surrounded by un-pumped, and therefore absorbing, regions. This ideal configuration is lost when photonic-crystal lasers are electrically pumped, which is practically more attractive as an external laser source is not required. In this case, in order to avoid lateral spreading of the electrical current, the device active area must be physically defined by appropriate semiconductor processing. This creates an abrupt change in the complex dielectric constant at the device boundaries, especially in the case of lasers operating in the far-infrared, where the large emission wavelengths impose device thicknesses of several micrometres. Here we show that such abrupt boundary conditions can dramatically influence the operation of electrically pumped photonic-crystal lasers. By demonstrating a general technique to implement reflecting or absorbing boundaries, we produce evidence that whispering-gallery-like modes or true photonic-crystal states can be alternatively excited. We illustrate the power of this technique by fabricating photonic-crystal terahertz (THz) semiconductor lasers, where the photonic crystal is implemented via the sole patterning of the device top metallization. Single-mode laser action is obtained in the 2.55-2.88 THz range, and the emission far field exhibits a small angular divergence, thus providing a solution for the quasi-total lack of directionality typical of THz semiconductor lasers based on metal-metal waveguides.

Circuit-tunable sub-wavelength THz resonators: hybridizing optical cavities and loop antennas.

We demonstrate subwavelength electromagnetic resonators operating in the THz spectral range, whose spectral properties and spatial/angular patterns can be engineered in a similar way to an electronic circuit. We discuss the device concept, and we experimentally study the tuning of the resonant frequency as a function of variable capacitances and inductances. We then elucidate the optical coupling properties. The radiation pattern, obtained by angle-resolved reflectance, reveals that the system mainly couples to the outside world via a magnetic dipolar interaction.

THz quantum cascade lasers operating on the radiative modes of a 2D photonic crystal.

Photonic-crystal lasers operating on Γ-point band-edge states of a photonic structure naturally exploit the so-called "nonradiative" modes. As the surface output coupling efficiency of these modes is low, they have relatively high Q factors, which favor lasing. We propose a new 2D photonic-crystal design that is capable of reversing this mode competition and achieving lasing on the radiative modes instead. Previously, this has only been shown in 1D structures, where the central idea is to introduce anisotropy into the system, both at unit-cell and resonator scales. By applying this concept to 2D photonic-crystal patterned terahertz frequency quantum cascade lasers, surface-emitting devices with diffraction-limited beams are demonstrated, with 17 mW peak output power.

Near-field analysis of metallic DFB lasers at telecom wavelengths.

We image in near-field the transverse modes of semiconductor distributed feedback (DFB) lasers operating at λ ≈ 1.3 µm and employing metallic gratings. The active region is based on tensile-strained InGaAlAs quantum wells emitting transverse magnetic polarized light and is coupled via an extremely thin cladding to a nano-patterned gold grating integrated on the device surface. Single mode emission is achieved, which tunes with the grating periodicity. The near-field measurements confirm laser operation on the fundamental transverse mode. Furthermore--together with a laser threshold reduction observed in the DFB lasers--it suggests that the patterning of the top metal contact can be a strategy to reduce the high plasmonic losses in this kind of systems.

In situ generation of surface plasmon polaritons using a near-infrared laser diode.

We demonstrate a semiconductor laser-based approach which enables plasmonic active devices in the telecom wavelength range. We show that optimized laser structures based on tensile-strained InGaAlAs quantum wells-coupled to integrated metallic patternings-enable surface plasmon generation in an electrically driven compact device. Experimental evidence of surface plasmon generation is obtained with the slit-doublet experiment in the near-field, using near-field scanning optical microscopy measurements.

Electrical modulation of the complex refractive index in mid-infrared quantum cascade lasers.

We have demonstrated an integrated three terminal device for the modulation of the complex refractive index of a distributed feedback quantum cascade laser (QCL). The device comprises an active region to produce optical gain vertically stacked with a control region made of asymmetric coupled quantum wells (ACQW). The optical mode, centered on the gain region, has a small overlap also with the control region. Owing to the three terminals an electrical bias can be applied independently on both regions: on the laser for producing optical gain and on the ACQW for tuning the energy of the intersubband transition. This allows the control of the optical losses at the laser frequency as the absorption peak associated to the intersubband transition can be electrically brought in and out the laser transition. By using this function a laser modulation depth of about 400 mW can be achieved by injecting less than 1 mW in the control region. This is four orders of magnitude less than the electrical power needed using direct current modulation and set the basis for the realisation of electrical to optical transducers.

Sub-wavelength energy concentration with electrically generated mid-infrared surface plasmons.

While freely propagating photons cannot be focused below their diffraction limit, surface-plasmon polaritons follow the metallic surface to which they are bound, and can lead to extremely sub-wavelength energy volumes. These properties are lost at long mid-infrared and THz wavelengths where metals behave as quasi-perfect conductors, but can in principle be recovered by artificially tailoring the surface-plasmon dispersion. We demonstrate - in the important mid-infrared range of the electromagnetic spectrum - the generation onto a semiconductor chip of plasmonic excitations which can travel along long distances, on bent paths, to be finally focused into a sub-wavelength volume. The demonstration of these advanced functionalities is supported by full near-field characterizations of the electromagnetic field distribution on the surface of the active plasmonic device.

Design of an integrated coupler for the electrical generation of surface plasmon polaritons.

Recently a surface plasmon polariton (SPP) source based on an electrically operated semiconductor laser has been demonstrated. Here we present a numerical investigation of the light-SPP coupling process involved in the device. The problem consists in the coupling via a diffraction grating between a dielectric waveguide mode--the laser mode--and a SPP mode. The issue of the coupling efficiency is discussed, and the dependence on various geometrical parameters of both the grating and the dielectric waveguide is studied in detail. A maximum coupling efficiency of ≈24% is obtained at telecom wavelengths, which could lead to a high-power integrated SPP source when combined to a laser medium.

Optical properties of metal-dielectric-metal microcavities in the THz frequency range.

We present an experimental and theoretical study of the optical properties of metal-dielectric-metal structures with patterned top metallic surfaces, in the THz frequency range. When the thickness of the dielectric slab is very small with respect to the wavelength, these structures are able to support strongly localized electromagnetic modes, concentrated in the subwavelength metal-metal regions. We provide a detailed analysis of the physical mechanisms which give rise to these photonic modes. Furthermore, our model quantitatively predicts the resonance positions and their coupling to free space photons. We demonstrate that these structures provide an efficient and controllable way to convert the energy of far field propagating waves into near field energy.

Ultrastrong light-matter coupling regime with polariton dots.

The regime of ultrastrong light-matter interaction has been investigated theoretically and experimentally, using zero-dimensional electromagnetic resonators coupled with an electronic transition between two confined states of a semiconductor quantum well. We have measured a splitting between the coupled modes that amounts to 48% of the energy transition, the highest ratio ever observed in a light-matter coupled system. Our analysis, based on a microscopic quantum theory, shows that the nonlinear polariton splitting, a signature of this regime, is a dynamical effect arising from the self-interaction of the collective electronic polarization with its own emitted field.

Semiconductor surface plasmon sources.

Surface-plasmon polaritons (SPPs) are propagating electromagnetic modes bound at a metal-dielectric interface. We report on electrical generation of SPPs by reproducing the analogue in the near field of the slit-doublet experiment, in a device which includes all the building blocks required for a fully integrated plasmonic active source: an electrical generator of SPPs, a coupler, and a passive metallic waveguide. SPPs are generated upon injection of electrical current, and they are then launched at the edges of a passive metallic strip. The interference fringes arising from the plasmonic standing wave on the surface of the metallic strip are unambiguously detected with apertureless near-field scanning optical microscopy.

Predictable surface emission patterns in terahertz photonic-crystal quantum cascade lasers.

We demonstrate a framework to understand and predict the far-field emission in terahertz frequency photonic-crystal quantum cascade lasers. The devices, which employ a high-performance three-well active region, are lithographically tunable and emit in the 104-120 microm wavelength range. A peak output power of 7 mW in pulsed mode is obtained at 10 K, and the typical device maximum operating temperature is 136 K. We identify the photonic-crystal band-edge states involved in the lasing process as originating from the hexapole and monopole modes at the G point of the photonic band structure, as designed. The theoretical far-field patterns, obtained via finite-difference time-domain simulations, are in excellent agreement with experiment. Polarization measurements further support the theory, and the role of the bonding wires in the emission process is elucidated.

A semiconductor laser device for the generation of surface-plasmons upon electrical injection.

Surface plasmons are electromagnetic waves originating from electrons and light oscillations at metallic surfaces. Since freely propagating light cannot be coupled directly into surface-plasmon modes, a compact, semiconductor electrical device capable of generating SPs on the device top metallic surface would represent an advantage: not only SP manipulation would become easier, but Au-metalized surfaces can be easily functionalized for applications. Here, we report a demonstration of such a device. The direct proof of surface-plasmon generation is obtained with apertureless near-field scanning optical microscopy, which detects the presence of an intense, evanescent electric field above the device metallic surface upon electrical injection.

Giant optical nonlinearity interferences in quantum structures.

Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures. These resonant nonlinearities continually attract attention, particularly in newly discovered materials. However, they are frequently not as heightened as currently predicted, limiting their exploitation in nanostructured nonlinear optics. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant destructive, as well as constructive, interference effects in complex systems. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband nonlinearities, we show that these giant interferences are a result of an unexpected interplay of the second-order nonlinear contributions of multiple light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of nanostructures, this advanced framework can be used as a novel, sensitive tool to elucidate the band structure properties of complex materials.