All-optical switching with 1-ps response time in a DDMEBT enabled silicon grating coupler/resonator hybrid device.

An amorphous film of the third-order nonlinear optical material DDMEBT was spun onto silicon chips for the first time, filling 80 nm lithographic features. A 710 µm² device was designed, fabricated, and tested that acts both as a nonlinear resonator switch and as an input/output grating coupler to a perfectly vertical single mode fiber. Autocorrelation and spectral measurements indicate the device has <1 ps response time, 4 nm of switching bandwidth, and 4 dB of on/off contrast. With sufficient power, this all-optical device can potentially modulate a single optical carrier frequency in excess of 1 THz.

On-chip silicon optical phased array for two-dimensional beam steering.

A 16-element optical phased array integrated on chip is presented for achieving two-dimensional (2D) optical beam steering. The device is fabricated on the silicon-on-insulator platform with a 250 nm silicon device layer. Steering is achieved via a combination of wavelength tuning and thermo-optic phase shifting with a switching power of P(π)=20 mW per channel. Using a silicon waveguide grating with a polycrystalline silicon overlay enables narrow far field beam widths while mitigating the precise etching needed for conventional shallow etch gratings. Using this system, 2D steering across a 20°×15° field of view is achieved with a sidelobe level better than 10 dB and with beam widths of 1.2°×0.5°.

Efficient perfectly vertical fiber-to-chip grating coupler for silicon horizontal multiple slot waveguides.

Horizontal multiple slot waveguides of polysilicon and silicon nanocrystalline oxide were grating coupled to a surface normal fiber array. Measurements yielded a coupling efficiency of 60% per grating. The fabrication-tolerant, four-stage grating design was genetically evolved from a random seed without starting from first-principle design. Theoretical coupling efficiency was 68% and was re-designed to 63% after accommodating all sources of fabrication error. To our knowledge, this is the first implementation of a purely polysilicon and silicon nanocrystalline oxide slot waveguide platform.

Colorless grating couplers realized by interleaving dispersion engineered subwavelength structures.

We investigate the waveguide dispersion of subwavelength structures, and propose that the waveguide dispersion can be reduced by reducing the period of subwavelength structures. A 3 dB bandwidth increment of 20% has been observed by introducing this concept into previously demonstrated grating couplers. To fully exploit the bandwidth merits of the structures, gratings with interleaved subwavelength structures were designed and fabricated. Two typical types of interleaving geometries have been investigated. Both demonstrated a 1 dB bandwidth ∼70 nm, a 3 dB bandwidth ∼117 nm, and a peak efficiency ∼-5.1 dB at 1570 nm for transverse-electric polarized light. The simulation confirms that the dispersion engineering adds an extra 12 nm to the 1 dB bandwidth.

Efficient light coupling into in-plane semiconductor nanomembrane photonic devices utilizing a sub-wavelength grating coupler.

We report a subwavelength grating (SWG) coupler for coupling light efficiently into in-plane semiconductor nanomembrane photonic devices for the first time. The SWG coupler consists of a periodic array of rectangular trenches fabricated on a silicon nanomembrane (SiNM) transferred onto a glass substrate. At a wavelength of 1555.56 nm, the coupling efficiency of the fabricated 10 µm wide, 17.1 µm long SWG is 39.17% (-4.07 dB), with 1 dB and 3 dB bandwidths of 29 nm and 57 nm, respectively. Peak efficiency varies by 0.26 dB when measuring 5 fabricated grating pairs. Coupling efficiency can further be improved with an improved SiNM transfer process. Such high efficiency couplers allow for the successful realization of a plethora of hybrid photonic devices utilizing nanomembrane technology.

Ultralow-loss polycrystalline silicon waveguides and high uniformity 1x12 MMI fanout for 3D photonic integration.

We have investigated the feasibility of multimode polysilicon waveguides to demonstrate the suitability of polysilicon as a candidate for multilayer photonic applications. Solid Phase Crystallization (SPC) with a maximum temperature of 1000°C is used to create polysilicon on thermally grown SiO2. We then measure the propagation losses for various waveguide widths on both polysilicon and crystalline silicon platforms. We find that as the width increases for polysilicon waveguides, the propagation loss decreases similar to crystalline silicon waveguides. At a waveguide width of 10 µm, polysilicon and crystalline silicon waveguides have propagation losses of 0.56 dB/cm and 0.31 dB/cm, respectively, indicating there is little bulk absorption from the polysilicon and is the lowest propagation loss for polysilicon demonstrated to date. In addition, the first 1x12 polysilicon MMI is demonstrated with a low insertion loss of -1.29dB and a high uniformity of 1.07 dB. These results vindicate the use of polysilicon waveguides of varying widths in photonic integrated circuits.

Coupling loss minimization of slow light slotted photonic crystal waveguides using mode matching with continuous group index perturbation.

We experimentally demonstrate highly efficient coupling into a slow light slotted photonic crystal waveguide. With optical mode converters and group index tapers that provide good optical mode matching and impedance matching, a nearly flat transmission over the entire guided mode spectrum of 68.8 nm range with 2.4 dB minimum insertion loss is demonstrated. Measurements also show up to 20 dB baseline enhancement and 30 dB enhancement in the slow light region, indicating that it is possible to design highly efficient and compact devices that benefit from the slow light enhancement without increasing the coupling loss.

Flexible single-crystal silicon nanomembrane photonic crystal cavity.

Flexible inorganic electronic devices promise numerous applications, especially in fields that could not be covered satisfactorily by conventional rigid devices. Benefits on a similar scale are also foreseeable for silicon photonic components. However, the difficulty in transferring intricate silicon photonic devices has deterred widespread development. In this paper, we demonstrate a flexible single-crystal silicon nanomembrane photonic crystal microcavity through a bonding and substrate removal approach. The transferred cavity shows a quality factor of 2.2×10(4) and could be bent to a curvature of 5 mm radius without deteriorating the performance compared to its counterparts on rigid substrates. A thorough characterization of the device reveals that the resonant wavelength is a linear function of the bending-induced strain. The device also shows a curvature-independent sensitivity to the ambient index variation.