RESUMEN
We have conducted a comprehensive investigation of the optical and vibrational properties of the binary semiconductor SnSe as a function of temperature and pressure by means of experimental and ab initio probes. Our high-temperature investigations at ambient pressure have successfully reproduced the progressive enhancement of the free carrier concentration upon approaching the Pnma â Bbmm transition, whereas the pressure-induced Pnma â Bbmm transformation at ambient temperature, accompanied by an electronic semiconductor â semi-metal transition, has been identified for bulk SnSe close to 10 GPa. Modeling of the Raman-active vibrations revealed that three-phonon anharmonic processes dominate the temperature-induced mode frequency evolution. In addition, SnSe was found to exhibit a pressure-induced enhancement of the Born effective charge. Such behavior is quite unique and cannot be rationalized within the proposed effective charge trends of binary materials under pressure.
RESUMEN
High-pressure molybdenum dioxide (HP-MoO2) was synthesized using a multianvil press at 18 GPa and 1073 K, as motivated by previous first-principles calculations. The crystal structure was determined by single-crystal X-ray diffraction. The new polymorph crystallizes isotypically to HP-WO2 in the orthorhombic crystal system in space group Pnma and was found to be diamagnetic. Theoretical investigations using structure optimization at density-functional theory (DFT) level indicate a transition pressure of 5 GPa at 0 K and identify the new compound as slightly metastable at ambient pressure with respect to the thermodynamically stable monoclinic MoO2 (α-MoO2; ΔEm = 2.2 kJ·mol-1).
RESUMEN
The high-pressure structural and vibrational properties of Bi2S3 have been probed up to 65 GPa with a combination of experimental and theoretical methods. The ambient-pressure Pnma structure is found to persist up to 50 GPa; further compression leads to structural disorder. Closer inspection of our structural and Raman spectroscopic results reveals notable compressibility changes in specific structural parameters of the Pnma phase beyond 4-6 GPa. By taking the available literature into account, we speculate that a second-order isostructural transition is realized near that pressure, originating probably from a topological modification of the Bi2S3 electronic structure near that pressure. Finally, the Bi(3+) lone-electron pair (LEP) stereochemical activity decreases against pressure increase; an utter vanishing, however, is not expected until 1 Mbar. This persistence of the Bi(3+) LEP activity in Bi2S3 can explain the absence of any structural transitions toward higher crystalline symmetries in the investigated pressure range.
RESUMEN
We carried out first-principles calculations to simulate Ag2ZnSnS4 and Ag2CdSnS4 and calculated enthalpies of different plausible structural models (kesterite-type, stannite-type, wurtzkesterite-type, wurtzstannite-type, and GeSb-type) to identify low- and high-pressure phases. For Ag2ZnSnS4, we predict the following transition: kesterite-typeâ[8.2GPa]â GeSb-type. At the transition pressure, the electronic structure changes from semiconducting to metallic. For Ag2CdSnS4, we cannot decide which of the experimentally observed structures (kesterite-type or wurtzkesterite-type) is the ground-state structure because their energy difference is too small. At 4.7 GPa, however, we predict a transition to the GeSb-type structure with metallic character for both structures. Regarding the sensitivity of the material to disorder, a major drawback for solar cell applications, Ag2CdSnS4 behaves similar to Cu2ZnSnS4, both showing a high tendency to cationic disorder. In contrast, the disordered structures in Ag2ZnSnS4 are much higher in energy, and therefore, the material is less affected by disorder.
RESUMEN
Pyrotechnology for the prehistoric pottery has been an important subject for the study of ancient production technology and technological styles. However, heterogeneous characteristics in chemical and mineralogical compositions and massive amounts of ceramic sherds at most archaeological sites make it difficult to identify production technologies. In this study, SEM-EDS/WDS, XRD and transmittance and reflectance FT-IR techniques were employed step by step, in order to overcome these limitations. The serial combination of each method covers a macro-, meso- and micro-scale and it enabled us to identify the relationship between firing temperature, reducing or oxidizing atmosphere and thermally induced mobility of Ca and Fe. Numerous ceramic pottery sherds from two archaeological sites in the North Caucasus, Ransyrt 1 (Middle-Late Bronze Age) and Kabardinka 2 (Late Bronze/Early Iron Age) were investigated and compared to the ceramics found at Levinsadovka and Saf'janovo around the Sea of Azov, Russia (Late/Final Bronze Age) for this purpose. Morphological changes by sintering and transformation of indicator minerals such as calcite, hematite, spinel, gehlenite, quartz and cis/trans-vacant 1M illite provide temperature thresholds at 675, 700, 750, 950, 1050, 1100, 1300 °C. With the laboratory based FT-IR, vibrational changes in shape, wavenumber and intensity corresponding to Si-O stretching bands yield an order and classification of the ceramics with regard to firing conditions between the samples as well as the unraveling of temperature profiles within a single sample in a 100 µm scale. With this approach, the number of archaeological ceramics could be classified according to the pyrometamorphic transformation of heterogeneous ceramic composite materials. Combined with the archaeological contexts of each site, these results will contribute to the reconstruction of local technological styles.
RESUMEN
High-pressure Raman spectroscopy and x-ray diffraction of Sb2S3 up to 53 GPa reveals two phase transitions at 5 GPa and 15 GPa. The first transition is evidenced by noticeable compressibility changes in distinct Raman-active modes, in the lattice parameter axial ratios, the unit cell volume, as well as in specific interatomic bond lengths and bond angles. By taking into account relevant results from the literature, we assign these effects to a second-order isostructural transition arising from an electronic topological transition in Sb2S3 near 5 GPa. Close comparison between Sb2S3 and Sb2Se3 up to 10 GPa reveals a slightly diverse structural behavior for these two compounds after the isostructural transition pressure. This structural diversity appears to account for the different pressure-induced electronic behavior of Sb2S3 and Sb2Se3 up to 10 GPa, i.e. the absence of an insulator-metal transition in Sb2S3 up to that pressure. Finally, the second high-pressure modification appearing above 15 GPa appears to trigger a structural disorder at ~20 GPa; full decompression from 53 GPa leads to the recovery of an amorphous state.
RESUMEN
Selected members of the A2B3 (A = Sb, Bi; B = Se, Te) family are topological insulators. The Sb2Se3 compound does not exhibit any topological properties at ambient conditions; a recent high-pressure study, however, indicated that pressure transforms Sb2Se3 from a band insulator into a topological insulator above ~2 GPa; in addition, three structural transitions were proposed to occur up to 25 GPa. Partly motivated by these results, we have performed x-ray diffraction and Raman spectroscopy investigations on Sb2Se3 under pressure up to 65 GPa. We have identified only one reversible structural transition: the initial Pnma structure transforms into a disordered cubic bcc alloy above 51 GPa. On the other hand, our high-pressure Raman study did not reproduce the previous results; we attribute the discrepancies to the effects of the different pressure transmitting media used in the high-pressure experiments. We discuss the structural behavior of Sb2Se3 within the A2B3 (A = Sb, Bi; B = Se, Te) series.