RESUMEN
Donor-acceptor polymeric semiconductors are crucial for state-of-the-art applications, such as electronic skin mimics. The processability, and thus solubility, of these polymers in benign solvents is critical and can be improved through side chain engineering. Nevertheless, the impact of novel side chains on backbone orientation and emerging device properties often remains to be elucidated. Here, we investigate the influence of elongated linear and branched discrete oligodimethylsiloxane (oDMS) side chains on solubility and device performance. Thereto, diketopyrrolopyrrole-thienothiophene polymers are equipped with various oDMS pendants (PDPPTT-Sin) and subsequently phase separated into lamellar domains. The introduction of a branching point in the siloxane significantly enhanced the solubility of the polymer, as a result of increased backbone distortion. Simultaneously, the charge carrier mobility of the polymers decreased by an order of magnitude upon functionalization with long and/or branched siloxanes. This work unveils the intricate balance between processability and device performance in organic semiconductors, which is key for the development of next-generation electronic devices.
RESUMEN
We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO3 films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (-4 V ≤ Vg ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO3 films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.