Efficient Tm:YAG and Tm:LuAG lasers pumped by 681 nm tapered diodes.

In this paper, we present highly efficient continuous-wave (cw) laser operation of Tm:YAG and Tm:LuAG lasers pumped by high-brightness red tapered diodes. The single-emitter tapered diode lasers (TDLs) provide up to 1 W of pump power around 680 nm. By adjusting the operation temperature of the TDL, the pump central wavelength could be matched to the strong absorption peak of Tm3+ ions in this region (H63→F33 excitation). This absorption peak is around threefold stronger than the usually employed 785 nm transition (H63→H34). In the cw laser experiments, we have achieved slope efficiencies exceeding 55% at room temperature, which is far above the Stokes limited slope efficiency (34%), indicating presence of a strong two-for-one cross-relaxation process. Pumping with high-brightness tapered diode lasers further facilitated usage of smaller pump spots (enabling quite low lasing thresholds) and generation of near-diffraction limited output beam profiles from standard z-type cavities. To the best of our knowledge, this is the first report of diode pumping of Tm-doped solid-state lasers around 680 nm as well as the first usage of TDLs as pump sources in Tm-doped laser systems.

Ultra-narrow linewidth DFB-laser with optical feedback from a monolithic confocal Fabry-Perot cavity.

We present a compact, ultra-narrow-linewidth semiconductor laser based on a 780 nm distributed feedback diode laser optically self-locked to a mode of an external monolithic confocal Fabry-Perot resonator. We characterize spectral properties of the laser by measuring its frequency noise power spectral density. The white frequency noise levels at 5 Hz(2)/Hz above a Fourier frequency as small as 20 kHz. This noise level is more than five orders of magnitude smaller than the noise level of the same solitary diode laser without resonant optical feedback, and it is three orders of magnitude smaller than the noise level of a narrow linewidth, grating-based, extended-cavity diode laser. The corresponding Lorentzian linewidth of the laser with resonant optical feedback is 15.7 Hz at an output power exceeding 50 mW.

Self-optimizing femtosecond semiconductor laser.

A self-optimizing approach to intra-cavity spectral shaping of external cavity mode-locked semiconductor lasers using edge-emitting multi-section diodes is presented. An evolutionary algorithm generates spectrally resolved phase- and amplitude masks that lead to the utilization of a large part of the net gain spectrum for mode-locked operation. Using these masks as a spectral amplitude and phase filter, a bandwidth of the optical intensity spectrum of 3.7 THz is achieved and Fourier-limited pulses of 216 fs duration are generated after further external compression.

Highly efficient single-pass sum frequency generation by cascaded nonlinear crystals.

The cascading of nonlinear crystals has been established as a simple method to greatly increase the conversion efficiency of single-pass second-harmonic generation compared to a single-crystal scheme. Here, we show for the first time that the technique can be extended to sum frequency generation, despite differences in the phase relations of the involved fields. An unprecedented 5.5 W of continuous-wave diffraction-limited green light is generated from the single-pass sum frequency mixing of two diode lasers in two periodically poled nonlinear crystals (conversion efficiency 50%). The technique is generally applicable and can be applied to any combination of fundamental wavelengths and nonlinear crystals.

Capability of shifted excitation Raman difference spectroscopy under ambient daylight.

We present the capability of shifted excitation Raman difference spectroscopy (SERDS) under ambient daylight. A dual-wavelength diode laser emitting at 785 nm is used as the excitation light source. The monolithic diode laser provides more than 110 mW in cw operation. Both excitation lines show an emission width ≤0.2 cm(-1) and a spectral distance of 10 cm(-1) as targeted for SERDS. Polystyrene (PS) is used as the test sample and ambient daylight to generate real-world background interference. Here, a broadband background signal with narrowband absorption lines from water vapor and Fraunhofer lines from singly ionized calcium (Ca II) obscure the Raman lines of PS. SERDS clearly separates the Raman signals from the background signals with a 13-fold improvement in signal-to-background noise.

High-power, micro-integrated diode laser modules at 767 and 780 nm for portable quantum gas experiments.

We present micro-integrated diode laser modules operating at wavelengths of 767 and 780 nm for cold quantum gas experiments on potassium and rubidium. The master-oscillator-power-amplifier concept provides both narrow linewidth emission and high optical output power. With a linewidth (10 µs) below 1 MHz and an output power of up to 3 W, these modules are specifically suited for quantum optics experiments and feature the robustness required for operation at a drop tower or on-board a sounding rocket. This technology development hence paves the way toward precision quantum optics experiments in space.

Mode-locked semiconductor laser system with intracavity spatial light modulator for linear and nonlinear dispersion management.

We analyze the influence of second and third order intracavity dispersion on a passively mode-locked diode laser by introducing a spatial light modulator (SLM) into the external cavity. The dispersion is optimized for chirped pulses with highest possible spectral bandwidth that can be externally compressed to the sub picosecond range. We demonstrate that the highest spectral bandwidth is achieved for a combination of second and third order dispersion. With subsequent external compression pulses with a duration of 437 fs are generated.

Micro-integrated extended cavity diode lasers for precision potassium spectroscopy in space.

We present a micro-integrated, extended cavity diode laser module for space-based experiments on potassium Bose-Einstein condensates and atom interferometry. The module emits at the wavelength of the potassium D2-line at 766.7 nm and provides 27.5 GHz of continuous tunability. It features sub-100 kHz short term (100 µs) emission linewidth. To qualify the extended cavity diode laser module for quantum optics experiments in space, vibration tests (8.1 g(RMS) and 21.4 g(RMS)) and mechanical shock tests (1500 g) were carried out. No degradation of the electro-optical performance was observed.

Tunable 975 nm nanosecond diode-laser-based master-oscillator power-amplifier system with 16.3 W peak power and narrow spectral linewidth below 10 pm.

A spectrally tunable, narrow linewidth master oscillator power amplifier system emitting ns pulses with high peak power is presented. The master oscillator is a distributed feedback ridge waveguide (DFB-RW) laser, which is operated in continuous wave (CW) mode and emits at about 975 nm with a spectral line width below 10 pm. The oscillator can be tuned over a range of 0.9 nm by varying the injection current. The tapered amplifier (TA) consists of an RW section and a flared gain-guided section. The RW section of the amplifier acts as an optical gate and converts the CW input beam emitted by the DFB-RW laser into a train of short optical pulses, which are subsequently amplified by the tapered section. The width of the pulses is 8 ns at a repetition rate of 25 kHz. The peak power is 16.3 W. The TA preserves the spectral properties of the emission of the DBR-RW laser. The amplified spontaneous emission is suppressed by about 40 dB.

Accurate frequency noise measurement of free-running lasers.

We present a simple method to accurately measure the frequency noise power spectrum of lasers. It relies on creating the beat note between two lasers, capturing the corresponding signal in the time domain, and appropriately postprocessing the data to derive the frequency noise power spectrum. In contrast to methods already established, it does not require stabilization of the laser to an optical reference, i.e., a second laser, to an optical cavity or to an atomic transition. It further omits a frequency discriminator and hence avoids bandwidth limitation and nonlinearity effects common to high-resolution frequency discriminators.

Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator-power amplifier system.

We present a method of the generation of sub-100 ps pulses with an all-semiconductor master oscillator-power amplifier (MOPA) system, consisting of a three section distributed Bragg reflector (DBR) laser as MO and a two section tapered PA. The pulses generated by the gain-switched DBR laser are first shortened by the ridge-waveguide input section of the PA acting as a saturable absorber and then amplified by the tapered gain region section. We generate laser pulses with a minimum duration of 35 ps and a peak power of more than 65 W. The spectral width is less than 0.25 nm around a center wavelength of 1063 nm.

Femtosecond diode-pumped solid-state laser with a repetition rate of 4.8 GHz.

We report on a diode-pumped Yb:KGW (ytterbium-doped potassium gadolinium tungstate) laser with a repetition rate of 4.8 GHz and a pulse duration of 396 fs. Stable fundamental modelocking is achieved with a semiconductor saturable absorber mirror (SESAM). The average output power of this compact diode-pumped solid state laser is 1.9 W which corresponds to a peak power of 0.9 kW and the optical-to-optical efficiency is 36%. To the best of our knowledge, this is the femtosecond DPSSL with the highest repetition rate ever reported so far.

High peak power optical pulses generated with a monolithic master-oscillator power amplifier.

We present results on a monolithic semiconductor-based master-oscillator power amplifier (MOPA) combining a distributed-feedback (DFB) laser and a tapered amplifier on a single chip. The MOPA reaches an output power of almost 12 W at an emission wavelength around 1064 nm in continuous-wave operation. Pulses with a length of around 100 ps can be obtained either by injecting nanosecond current pulses into the tapered amplifier alone or into both the DFB laser and the tapered amplifier. In the latter case, pulses with a width of 84 ps, a peak power of 42 W, and a spectral width of 160 pm are generated.

Efficient concept for generation of diffraction-limited green light by sum-frequency generation of spectrally combined tapered diode lasers.

In order to increase the power of visible diode laser systems in an efficient manner, we propose spectral beam combining with subsequent sum-frequency generation. We show that this approach, in comparison with second harmonic generation of single emitters, can enhance the available power significantly. By combining two distributed Bragg reflector tapered diode lasers we achieve a 2.5-3.2 fold increase in power and a maximum of 3.9 W of diffraction-limited green light. At this power level, green diode laser systems have a high application potential, e.g., within the biomedical field. Our concept can be expanded combining multiple diode lasers to increase the power even further.

Thermal optimization of second harmonic generation at high pump powers.

We measure the temperature distribution of a 3 cm long periodically poled LiNbO3 crystal in a single-pass second harmonic generation (SHG) setup at 488 nm. By means of three resistance heaters and directly mounted Pt100 sensors the crystal is subdivided in three sections. 9.4 W infrared pump light and 1.3 W of SHG light cause a de-homogenized temperature distribution of 0.2 K between the middle and back section. A sectional offset heating is used to homogenize the temperature in those two sections and thus increasing the conversion efficiency. A 15% higher SHG output power matching the prediction of our theoretical model is achieved.

16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers.

Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2-values of the laser with lowest spatial coherence. The principle of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future.

Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz.

We demonstrate a compact, narrow-linewidth, high-power, micro-integrated semiconductor-based master oscillator power amplifier laser module which is implemented on a footprint of 50 x 10 mm(2). A micro-isolator between the oscillator and the amplifier suppresses optical feedback. The oscillator is a distributed Bragg reflector laser optimized for narrow-linewidth operation and the amplifier consists of a ridge waveguide entry and a tapered amplifier section. The module features stable single-mode operation with a FWHM linewidth of only 100 kHz and an intrinsic linewidth as small as 3.6 kHz for an output power beyond 1 W.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Efficient high-power frequency doubling of distributed Bragg reflector tapered laser radiation in a periodically poled MgO-doped lithium niobate planar waveguide.

We report on efficient single-pass, high-power second-harmonic generation in a periodically poled MgO-doped LiNbO3 planar waveguide using a distributed Bragg reflector tapered diode laser as a pump source. A coupling efficiency into the planar waveguide of 73% was realized, and 1.07 W of visible laser light at 532 nm was generated. Corresponding optical and electro-optical conversion efficiencies of 26% and 8.4%, respectively, were achieved. Good agreement between the experimental data and the theoretical predictions was observed.