Direct observation of correlations between individual photon emission events of a microcavity laser.

Lasers are recognized for coherent light emission, the onset of which is reflected in a change in the photon statistics. For many years, attempts have been made to directly measure correlations in the individual photon emission events of semiconductor lasers. Previously, the temporal decay of these correlations below or at the lasing threshold was considerably faster than could be measured with the time resolution provided by the Hanbury Brown/Twiss measurement set-up used. Here we demonstrate a measurement technique using a streak camera that overcomes this limitation and provides a record of the arrival times of individual photons. This allows us to investigate the dynamical evolution of correlations between the individual photon emission events. We apply our studies to micropillar lasers with semiconductor quantum dots as the active material, operating in the regime of cavity quantum electrodynamics. For laser resonators with a low cavity quality factor, Q, a smooth transition from photon bunching to uncorrelated emission with increasing pumping is observed; for high-Q resonators, we see a non-monotonic dependence around the threshold where quantum light emission can occur. We identify regimes of dynamical anti-bunching of photons in agreement with the predictions of a microscopic theory that includes semiconductor-specific effects.

Coherence expansion and polariton condensate formation in a semiconductor microcavity.

The dynamics of the expansion of the first order spatial coherence g(1) for a polariton system in a high-Q GaAs microcavity was investigated on the basis of Young's double slit experiment under 3 ps pulse excitation at the conditions of polariton Bose-Einstein condensation. It was found that in the process of condensate formation the coherence expands with a constant velocity of about 10(8) cm/s. The measured coherence is smaller than that in a thermal equilibrium system during the growth of condensate density and well exceeds it at the end of condensate decay. The onset of spatial coherence is governed by polariton relaxation while condensate amplitude and phase fluctuations are not suppressed.

Bloch-wave engineering of quantum dot micropillars for cavity quantum electrodynamics experiments.

We have employed Bloch-wave engineering to realize submicron diameter high quality factor GaAs/AlAs micropillars (MPs). The design features a tapered cavity in which the fundamental Bloch mode is subject to an adiabatic transition to match the Bragg mirror Bloch mode. The resulting reduced scattering loss leads to record-high vacuum Rabi splitting of the strong coupling in MPs with modest oscillator strength quantum dots. A quality factor of 13, 600 and a splitting of 85 µeV with an estimated visibility v of 0.41 are observed for a small mode volume MP with a diameter d{c} of 850 nm.

Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy.

We demonstrate a method to controllably reduce the density of self-assembled InP quantum dots (QDs) by cyclic deposition with growth interruptions. Varying the number of cycles enabled a reduction of the QD density from 7.4 × 10(10) cm(-2) to 1.8 × 10(9) cm(-2) for the same total amount of deposited InP. Simultaneously, a systematic increase of the QD size could be observed. Emission characteristics of different-sized InP QDs were analyzed. Excitation power dependent and time-resolved measurements confirm a transition from type I to type II band alignment for large InP quantum dots. Photon autocorrelation measurements of type I QDs performed under pulsed excitation reveal pronounced antibunching (g((2))(τ = 0) = 0.06 ± 0.03) as expected for a single-photon emitter. The described growth routine has great promise for the exploitation of InP QDs as quantum emitters.

Site-controlled growth of InP/GaInP quantum dots on GaAs substrates.

A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25 µm along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (λ ~ 670 nm) are investigated by means of ensemble- and micro-photoluminescence spectroscopy at cryogenic temperatures.

Up on the Jaynes-Cummings ladder of a quantum-dot/microcavity system.

In spite of their different natures, light and matter can be unified under the strong-coupling regime, yielding superpositions of the two, referred to as dressed states or polaritons. After initially being demonstrated in bulk semiconductors and atomic systems, strong-coupling phenomena have been recently realized in solid-state optical microcavities. Strong coupling is an essential ingredient in the physics spanning from many-body quantum coherence phenomena, such as Bose-Einstein condensation and superfluidity, to cavity quantum electrodynamics. Within cavity quantum electrodynamics, the Jaynes-Cummings model describes the interaction of a single fermionic two-level system with a single bosonic photon mode. For a photon number larger than one, known as quantum strong coupling, a significant anharmonicity is predicted for the ladder-like spectrum of dressed states. For optical transitions in semiconductor nanostructures, first signatures of the quantum strong coupling were recently reported. Here we use advanced coherent nonlinear spectroscopy to explore a strongly coupled exciton-cavity system. We measure and simulate its four-wave mixing response, granting direct access to the coherent dynamics of the first and second rungs of the Jaynes-Cummings ladder. The agreement of the rich experimental evidence with the predictions of the Jaynes-Cummings model is proof of the quantum strong-coupling regime in the investigated solid-state system.

Dephasing of triplet-sideband optical emission of a resonantly driven InAs/GaAs quantum dot inside a microcavity.

Detailed properties of resonance fluorescence from a single quantum dot in a micropillar cavity are investigated, with particular focus on emission coherence in the dependence on optical driving field power and detuning. A power-dependent series over a wide range reveals characteristic Mollow triplet spectra with large Rabi splittings of |Ω|≤15 GHz. In particular, the effect of dephasing in terms of systematic spectral broadening ∝Ω(2) of the Mollow sidebands is observed as a strong fingerprint of excitation-induced dephasing. Our results are in excellent agreement with predictions of a recently presented model on phonon-dressed quantum dot Mollow triplet emission in the cavity-QED regime.

Observation of non-Markovian dynamics of a single quantum dot in a micropillar cavity.

We measure the detuning-dependent dynamics of a quasiresonantly excited single quantum dot coupled to a micropillar cavity. The system is modeled with the dissipative Jaynes-Cummings model where all experimental parameters are determined by explicit measurements. We observe non-Markovian dynamics when the quantum dot is tuned into resonance with the cavity leading to a nonexponential decay in time. Excellent agreement between experiment and theory is observed with no free parameters providing the first quantitative description of an all-solid-state cavity QED system based on quantum dot emitters.

Short wavelength emission of AlGaInP quantum dots grown on GaP substrate.

We report on the growth of AlGaInP quantum dots (QDs) with Al contents between 0% and 10% on GaP substrate by gas-source molecular beam epitaxy and the investigation of their morphological and low temperature photoluminescence properties. These high areal density QDs show short wavelength emission between 575 and 612 nm depending on their composition. The authors interpret the QD emission as originating from indirect type-II transitions. This interpretation is supported by a single-band effective-mass model, which allows us to describe the role of differing barrier composition in the QD emission. Time-resolved photoluminescence measurements are performed and discussed with respect to the calculations.

Polarized nonequilibrium Bose-Einstein condensates of spinor exciton polaritons in a magnetic field.

The effect of a magnetic field on a spinor exciton-polariton condensate has been investigated. A quenching of a polariton Zeeman splitting and an elliptical polarization of the condensate have been observed at low magnetic fields B<2 T. The effects are attributed to a competition between the magnetic field induced circular polarization buildup and the spin-anisotropic polariton-polariton interaction which favors a linear polarization. The sign of the circular polarization of the condensate emission at B<3 T is negative, suggesting that a dynamic condensation in the excited spin state rather than the ground spin state takes place in this magnetic field range. From about 2T on, the Zeeman splitting opens and from then on the slope of the circular polarization degree changes its sign. For magnetic fields larger than the 3 T, the upper spin state occupation is energetically suppressed and circularly polarized condensation takes place in the ground state.

Time-resolved photoluminescence investigations on HfO2-capped InP nanowires.

We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO(2) surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO(2)-capped InP NWs. In particular, we have studied the impact of ALD process parameters as well as surface treatment prior to the oxide capping on the NW-dielectrics interface quality. The best results in terms of the surface recombination velocity (S(0) = 9.5 x 10(3) cm s(-1)) were obtained for InP/GaP core/shell NWs in combination with a low temperature (100 degrees C) ALD process. While the present report focuses on the InP material system, our method of addressing the surface treatment for semiconductors with high-kappa dielectrics will also be applicable to nanoelectronic devices based on other III/V material systems such as InAs.

Atomic scale interface engineering for strain compensated epitaxially grown InAs/AlSb superlattices.

This paper presents a systematic investigation of strain compensation schemes for InAs/AlSb superlattices (SLs) on GaSb substrates. Short growth interruptions (soak times) under varying arsenic and/or antimony beam equivalent pressures in InAs/AlSb SLs with exemplary dimensions of about ((2.4/2.4) ± 0.2) nm were investigated to achieve strain compensation. When using uncracked As(4), strain compensation was found to be unaccomplishable unless sub-monolayer AlAs spikes were inserted at the InAs → AlSb interface. In contrast, the supply of cracked As(2) dimers leads directly to the formation of strain compensating AlAs-like interfaces. This mechanism allows various growth sequences for strain compensated superlattices, including soak-time-free and Sb-soak-only SL growth. Each of the two latter approaches yields layers with excellent crystal quality and minimal intermixing at the heterointerfaces as verified by high resolution x-ray diffraction analysis and transmission electron microscopy.

Hidden symmetries in the energy levels of excitonic 'artificial atoms'

Quantum dots or 'artificial atoms' are of fundamental and technological interest--for example, quantum dots may form the basis of new generations of lasers. The emission in quantum-dot lasers originates from the recombination of excitonic complexes, so it is important to understand the dot's internal electronic structure (and of fundamental interest to compare this to real atomic structure). Here we investigate artificial electronic structure by injecting optically a controlled number of electrons and holes into an isolated single quantum dot. The charge carriers form complexes that are artificial analogues of hydrogen, helium, lithium, beryllium, boron and carbon excitonic atoms. We observe that electrons and holes occupy the confined electronic shells in characteristic numbers according to the Pauli exclusion principle. In each degenerate shell, collective condensation of the electrons and holes into coherent many-exciton ground states takes place; this phenomenon results from hidden symmetries (the analogue of Hund's rules for real atoms) in the energy function that describes the multi-particle system. Breaking of the hidden symmetries leads to unusual quantum interferences in emission involving excited states.

Strong coupling in a single quantum dot-semiconductor microcavity system.

Cavity quantum electrodynamics, a central research field in optics and solid-state physics, addresses properties of atom-like emitters in cavities and can be divided into a weak and a strong coupling regime. For weak coupling, the spontaneous emission can be enhanced or reduced compared with its vacuum level by tuning discrete cavity modes in and out of resonance with the emitter. However, the most striking change of emission properties occurs when the conditions for strong coupling are fulfilled. In this case there is a change from the usual irreversible spontaneous emission to a reversible exchange of energy between the emitter and the cavity mode. This coherent coupling may provide a basis for future applications in quantum information processing or schemes for coherent control. Until now, strong coupling of individual two-level systems has been observed only for atoms in large cavities. Here we report the observation of strong coupling of a single two-level solid-state system with a photon, as realized by a single quantum dot in a semiconductor microcavity. The strong coupling is manifest in photoluminescence data that display anti-crossings between the quantum dot exciton and cavity-mode dispersion relations, characterized by a vacuum Rabi splitting of about 140 microeV.

The role of optical excitation power on the emission spectra of a strongly coupled quantum dot-micropillar system.

A strongly coupled quantum dot-micropillar cavity system is studied under variation of the excitation power. The characteristic double peak spectral shape of the emission with a vacuum Rabi splitting of 85 microeV at low excitation transforms gradually into a single broad emission peak when the excitation power is increased. Modelling the experimental data by a recently published formalism [Laussy et al., Phys. Rev. Lett. 101, 083601 (2008)] yields a transition from strong coupling towards weak coupling which is mainly attributed to an excitation power driven decrease of the exciton-photon coupling constant.

Post-selected indistinguishable photons from the resonance fluorescence of a single quantum dot in a microcavity.

Applying continuous-wave pure resonant s-shell optical excitation of individual quantum dots in a high-quality micropillar cavity, we demonstrate the generation of post-selected indistinguishable photons in resonance fluorescence. Close to ideal visibility contrast of 90% is verified by polarization-dependent Hong-Ou-Mandel two-photon interference measurements. Furthermore, a strictly resonant continuous-wave excitation together with controlling the spontaneous emission lifetime of the single quantum dots via tunable emitter-mode coupling (Purcell) is proven as a versatile scheme to generate close to Fourier transform-limited (T2/(2T1)=0.91) single photons even at 80% of the emission saturation level.

Coupling and entangling of quantum states in quantum dot molecules.

We demonstrate coupling and entangling of quantum states in a pair of vertically aligned, self-assembled quantum dots by studying the emission of an interacting electron-hole pair (exciton) in a single dot molecule as a function of the separation between the dots. An interaction-induced energy splitting of the exciton is observed that exceeds 30 millielectron volts for a dot layer separation of 4 nanometers. The results are interpreted by mapping the tunneling of a particle in a double dot to the problem of a single spin. The electron-hole complex is shown to be equivalent to entangled states of two interacting spins.

InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.

We demonstrate an optimized molecular beam epitaxial growth procedure of InAs quantum dots (QDs) capped by a low nitrogen content GaInAs(N) quantum well to obtain single QD emission at telecommunication wavelengths. Technical separation of the nitrogen radio frequency plasma source to a second chamber does allow formation of InAs QDs without nitrogen incorporation. Thereby, optical quality degradation is avoided and by additional careful separation of the GaInAsN cap from the InAs QD layer with a partial GaInAs cap of nominal 4 nm thickness we achieve comparatively bright single dot emission above 1300 nm at 8 K. Micro-photoluminescence spectroscopy on single QDs reveal excitonic and biexcitonic emission at 939.8 meV ( approximately 1.319 microm) and 934.6 meV ( approximately 1.327 microm), respectively. Hence, InAs/GaAs(N) QDs can be considered as to be a promising system for use as single photon sources emitting in the 1.3 microm telecommunication band, with prospects for an extension to even longer wavelengths.

The structural and optical characterization of high areal density Ga(x)In(1-x)P quantum dots on GaP.

We present a study of the growth, morphology and optical properties of Ga(x)In(1-x)P quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.

Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration.

Results obtained by an advanced growth of site-controlled quantum dots (SCQDs) on pre-patterned nanoholes and their integration into both photonic resonators and nanoelectronic memories are summarized. A specific technique has been pursued to improve the optical quality of single SCQDs. Quantum dot (QD) layers have been vertically stacked but spectrally detuned for single SCQD studies. Thereby, the average emission linewidth of single QDs could be reduced from 2.3 meV for SCQDs in a first QD layer close to the etched nanoholes down to 600 microeV in the third InAs QD layer. Accurate SCQD nucleation on large QD distances is maintained by vertical strain induced QD coupling throughout the QD stacks. Record narrow linewidths of individual SCQDs down to approximately 110 microeV have been obtained. Experiments performed on coupled photonic SCQD-resonator devices show an enhancement of spontaneous emission. SCQDs have also been integrated deterministically in high electron mobility heterostructures and flash memory operation at room temperature has been observed.