Interface and Morphology Engineered Amorphous Si for Ultrafast Electrochemical Lithium Storage.

Ultrafast high-capacity lithium-ion batteries are extremely desirable for portable electronic devices, where Si is the most promising alternative to the conventional graphite anode due to its very high theoretical capacity. However, the low electronic conductivity and poor Li-diffusivity limit its rate capability. Moreover, high volume expansion/contraction upon Li-intake/uptake causes severe pulverization of the electrode, leading to drastic capacity fading. Here, interface and morphology-engineered amorphous Si matrix is being reported utilizing a few-layer vertical graphene (VG) buffer layer to retain high capacity at both slow and fast (dis)charging rates. The flexible mechanical support of VG due to the van-der-Waals interaction between the graphene layers, the weak adhesion between Si and graphene, and the highly porous geometry mitigated stress, while the three-dimensional mass loading enhanced specific capacity. Additionally, the high electronic conductivity of VG boosted rate-capability, resulting in a reversible gravimetric capacity of ≈1270 mAh g-1 (areal capacity of ≈37 µAh cm-2) even after 100 cycles at an ultrafast cycling rate of 20C, which provides a fascinating way for conductivity and stress management to obtain high-performance storage devices.

Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation.

Tailoring the physicochemical properties of graphene through functionalization remains a major interest for next-generation technological applications. However, defect formation due to functionalization greatly endangers the intrinsic properties of graphene, which remains a serious concern. Despite numerous attempts to address this issue, a comprehensive analysis has not been conducted. This work reports a two-step fluorination process to stabilize the fluorinated graphene and obtain control over the fluorination-induced defects in graphene layers. The structural, electronic and isotope-mass-sensitive spectroscopic characterization unveils several not-yet-resolved facts, such as fluorination sites and CF bond stability in partially-fluorinated graphene (F-SLG). The stability of fluorine has been correlated to fluorine co-shared between two graphene layers in fluorinated-bilayer-graphene (F-BLG). The desorption energy of co-shared fluorine is an order of magnitude higher than the CF bond energy in F-SLG due to the electrostatic interaction and the inhibition of defluorination in the F-BLG. Additionally, F-BLG exhibits enhanced light-matter interaction, which has been utilized to design a proof-of-concept field-effect phototransistor that produces high photocurrent response at a time <200 µs. Thus, the study paves a new avenue for the in-depth understanding and practical utilization of fluorinated graphenic carbon.

Oxidative dehydrogenation of cyclohexene on atomically precise subnanometer Cu4-nPdn (0 ≤ n ≤ 4) tetramer clusters: the effect of cluster composition and support on performance.

The pronounced effects of the composition of four-atom monometallic Cu and Pd and bimetallic CuPd clusters and the support on the catalytic activity and selectivity in the oxidative dehydrogenation of cyclohexene are reported. The ultra-nanocrystalline diamond supported clusters are highly active and dominantly produce benzene; some of the mixed clusters also produce cyclohexadiene, which are all clusters with a much suppressed combustion channel. The also highly active TiO2-supported tetramers solely produce benzene, without any combustion to CO2. The selectivity of the zirconia-supported mixed CuPd clusters and the monometallic Cu cluster is entirely different; though they are less active in comparison to clusters with other supports, these clusters produce significant fractions of cyclohexadiene, with their selectivity towards cyclohexadiene gradually increasing with the increasing number of copper atoms in the cluster, reaching about 50% for Cu3Pd1. The zirconia-supported copper tetramer stands out from among all the other tetramers in this reaction, with a selectivity towards cyclohexadiene of 70%, which far exceeds those of all the other cluster-support combinations. The findings from this study indicate a positive effect of copper on the stability of the mixed tetramers and potential new ways of fine-tuning catalyst performance by controlling the composition of the active site and via cluster-support interactions in complex oxidative reactions under the suppression of the undesired combustion of the feed.

Strong and efficient doping of monolayer MoS2 by a graphene electrode.

The efficient manipulation of the optoelectronic properties of layered semiconductors is essential for future applications of these unique materials. Here, we demonstrate that single-layer, large-area graphene can serve as a conductive spacer between an electrolyte solution and single-layer MoS2. In situ Raman and photoluminescence (PL) spectroscopies were employed to monitor the charge transfer from graphene to MoS2. The Raman G and 2D bands were used to quantify the carrier concentration in graphene. The high efficiency of the charge transfer via graphene in a broad carrier concentration range of ±2.1 × 1013 cm-2 was documented by the extreme sensitivity of the MoS2 Raman mode to the electron-doping (shift rate of ∼2.5 cm-1/1 × 1013 cm-2 electron concentration) and the high sensitivity of the PL yield, which drops by more than one and two orders of magnitude in the hole and electron doping regimes, respectively. The easy implementation, and the lithography-free effectiveness of the setup, in terms of the achievable carrier concentration range and the charge-transfer efficiency, could be an asset in near-future research and in the development of optoelectronic devices.

Tuning the electronic properties of monolayer and bilayer transition metal dichalcogenide compounds under direct out-of-plane compression.

The band-gap modulation of atomically thin semiconductor transition metal dichalcogenides (MX2; M = Mo or W, X = S or Se) under direct out-of-plane compression is systematically studied by means of the density functional theory (DFT) formalism including spin-orbit coupling (SOC) and dispersion correction (D3). The out-of-plane compared with other regimes stress regime significantly reduces the pressure threshold at which the semimetal state is achieved (2.7-3.1 and 1.9-3.2 GPa for mono- and bilayer systems, respectively). Structural, electronic and bonding properties are investigated for a better understanding of the electronic transitions achieved with compression. A notable relationship with the formal ionic radius (M4+ and X2-) is obtained. On one hand, the monolayer systems with the smallest transition metal radius (Mo4+ < W4+) reach the semimetal state at lower stress, on the other hand, for bilayer specimens the transition to semimetal is observed earlier for compounds with the smallest chalcogenide radius (S2- < Se2-). Moreover, the appearance of non-covalent interaction (NCI) domains in the semimetal state confirms that the out-of-plane compression promotes the interaction between sulfur atoms in the single layered systems and reduces the interlayer space in bilayer configurations. Our predictions, supported by experimental evidences in the case of monolayered MoS2, demonstrate new alternative methods for tuning the electronic properties of transition metal dichalcogenides under direct out-of-plane compression.

Raman spectroscopy and in situ Raman spectroelectrochemistry of isotopically engineered graphene systems.

CONSPECTUS: The special properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple tunability of its electronic structure, an asset that extends the usability of graphene even further beyond present experience. A direct injection of charge carriers into the conduction or valence bands, that is, doping, represents a viable way of shifting the Fermi level. In particular, electrochemical doping should be the method of choice, when higher doping levels are desired and when a firm control of experimental conditions is needed. In this Account, we focus on the electrochemistry of graphene in combination with in situ Raman spectroscopy, that is, in situ Raman spectroelectrochemistry. Such a combination of methods is indeed very powerful, since Raman spectroscopy not only can readily monitor the changes in the doping level but also can give information on eventual stress or disorder in the material. However, when Raman spectroscopy is employed, one of its main strengths lies in the utilization of isotope engineering during the chemical vapor deposition (CVD) growth of the graphene samples. The in situ Raman spectroelectrochemical study of multilayered systems with smartly designed isotope compositions in individual layers can provide a plethora of knowledge about the mutual interactions (i) between the graphene layers themselves, (ii) between graphene layers and their directly adjacent environment (e.g., substrate or electrolyte), and (iii) between graphene layers and their extended environment, which is separated from the layer by a certain number of additional graphene layers. In this Account, we show a few examples of such studies, from monolayer to two-layer and three-layer specimens and considering both turbostratic and AB interlayer ordering. Furthermore, the concept and the method can be extended further beyond the three-layer systems, for example, to heterostructures containing other 2-D materials beyond graphene. Despite a great deal of important results being unraveled so far through the in situ spectroelectrochemistry of graphene based systems, many intriguing challenges still lie immediately ahead. For example, apart from the aforementioned 2-D heterostructures, a substantial effort should be put into a more detailed exploration of misoriented (twisted) bilayer or trilayer graphenes. Marching from the oriented, AB-stacked to AA-stacked, bilayers, every single angular increment of the twist between the layers creates a new system in terms of its electronic properties. Mapping those properties and interlayer interactions dependent on the twist angle represents a sizable task, yet the reward might be the path toward the realization of various types of advanced devices. And last but not least, understanding the electrochemistry of graphene paves the way toward a controlled and targeted functionalization of graphene through redox reactions, especially when equipped with the possibility of an instantaneous monitoring of the thus introduced changes to the electronic structure of the system.

Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering.

Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS2. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ∼0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.

Fluorination of isotopically labeled turbostratic and Bernal stacked bilayer graphene.

Fluorination of graphene opens up a bandgap, which creates opportunities for optoelectronics, and also paves the way for the creation of extremely thin insulating layers, which can be important for applications in devices. However, in spite of many interesting features offered by, for example, unequally doped layers in multilayered systems, most of the work has concerned the fluorination of graphene monolayers. Here, the fluorination process of graphene bilayers is investigated through high-resolution Raman mapping followed by analysis of more than 10,000 spectra of bilayer graphene. Isotopically labeled bilayers are used, allowing each individual layer in bilayer graphene to be addressed unambiguously. The fluorinated graphene is prepared through exposure to XeF2. Monolayer graphene is found to be significantly more sensitive to fluorination than bilayer graphene. Through comparison of the D/G area ratio and the position of the G band for turbostratic and Bernal stacked (AB) bilayers, it is found that the fluorination process is more effective for turbostratic than for AB-stacked bilayer graphene. The fluorination changes the electronic structure similarly for the top and bottom layers in turbostratic bilayers. However, the top layer is more sensitive than the bottom layer in AB-stacked bilayers.

Phonon and structural changes in deformed Bernal stacked bilayer graphene.

We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous stress distribution across the layers. These phenomena such as the removal of inversion symmetry in bilayer graphene may have important implications in the band gap engineering, providing an alternative route to induce the formation of a band gap.

Complex Strain Scapes in Reconstructed Transition-Metal Dichalcogenide Moiré Superlattices.

We investigate the intrinsic strain associated with the coupling of twisted MoS2/MoSe2 heterobilayers by combining experiments and molecular dynamics simulations. Our study reveals that small twist angles (between 0 and 2°) give rise to considerable atomic reconstructions, large moiré periodicities, and high levels of local strain (with an average value of ∼1%). Moreover, the formation of moiré superlattices is assisted by specific reconstructions of stacking domains. This process leads to a complex strain distribution characterized by a combined deformation state of uniaxial, biaxial, and shear components. Lattice reconstruction is hindered with larger twist angles (>10°) that produce moiré patterns of small periodicity and negligible strains. Polarization-dependent Raman experiments also evidence the presence of an intricate strain distribution in heterobilayers with near-0° twist angles through the splitting of the E2g1 mode of the top (MoS2) layer due to atomic reconstruction. Detailed analyses of moiré patterns measured by AFM unveil varying degrees of anisotropy in the moiré superlattices due to the heterostrain induced during the stacking of monolayers.

Electrostatic Gating of Monolayer Graphene by Concentrated Aqueous Electrolytes.

Electrostatic gating using electrolytes is a powerful approach for controlling the electronic properties of atomically thin two-dimensional materials such as graphene. However, the role of the ionic type, size, and concentration and the resulting gating efficiency is unclear due to the complex interplay of electrochemical processes and charge doping. Understanding these relationships facilitates the successful design of electrolyte gates and supercapacitors. To that end, we employ in situ Raman microspectroscopy combined with electrostatic gating using various concentrated aqueous electrolytes. We show that while the ionic type and concentration alter the initial doping state of graphene, they have no measurable influence over the rate of the doping of graphene with applied voltage in the high ionic strength limit of 3-15 M. Crucially, unlike for conventional dielectric gates, a large proportion of the applied voltage contributes to the Fermi level shift of graphene in concentrated electrolytes. We provide a practical overview of the doping efficiency for different gating systems.

Effects of heat treatment on Raman spectra of two-layer 12C/13C graphene.

The Raman spectra of two-layered graphene on a silicon substrate were studied in the temperature range from 298 to 1073 K in an inert atmosphere. Isotopic engineering was used to fabricate two-layer graphene specimens containing (13)C atoms in the top layer and (12)C atoms in the bottom layer, which allowed the behavior of each particular layer to be distinguished as a function of temperature. It is demonstrated that the top layer exhibits much lower Raman temperature coefficients than the bottom one for both the G and the G' modes. We suggest that the changes in the Raman spectra of graphene observed during thermal cycling are predominantly caused by a superposition of two effects, namely, the mechanical stress in graphene exerted by the substrate and the intrinsic changes in the graphene lattice caused by the temperature itself. The top graphene layer is proposed to be more relaxed than the bottom graphene layer and thus reflects almost exclusively the temperature variations as a freestanding graphene layer would.

Raman spectra of titanium dioxide (anatase, rutile) with identified oxygen isotopes (16, 17, 18).

Six representative isotope-labeled samples of titanium dioxide were synthesized: Ti(16)O(2), Ti(17)O(2) and Ti(18)O(2), each in anatase and rutile forms. Their Raman scattering was analyzed at temperatures down to 5 K. Spectral assignment was supported by numerical simulation using DFT calculations. The combination of experimental and theoretical Raman frequencies with the corresponding isotopic shifts allowed us to address various still-open questions about the second-order Raman scattering in rutile, and the analysis of overlapping features in the anatase spectrum.

Nano-optical Visualization of Interlayer Interactions in WSe2/WS2 Heterostructures.

The interplay between excitons and phonons governs the optical and electronic properties of transition metal dichalcogenides (TMDs). Even though a number of linear and nonlinear optical-, electron-, and photoelectron-based approaches have been developed and/or adopted to characterize excitons and phonons in single/few-layer TMDs and their heterostructures, no existing method is capable of directly probing ultralow-frequency and interlayer phonons on the nanoscale. To this end, we developed ultralow-frequency tip-enhanced Raman spectroscopy, which allows spectrally and spatially resolved chemical and structural nanoimaging of WSe2/WS2 heterostructures. In this work, we apply this method to analyze phonons in nanobubbles that are sustained in these heterobilayers. Our method is capable of directly probing interlayer (de)coupling using our novel structurally sensitive nano-optical probe and the interplay between excitons and interlayer/intralayer phonons through correlation analysis of the recorded spectral images.

Localized Spectroelectrochemical Identification of Basal Plane and Defect-Related Charge-Transfer Processes in Graphene.

It is well-known that structural defects play a decisive role in electrochemical behavior of atomically thin materials, where all the defects are directly accessible by the electrolyte. However, the vast majority of experimental techniques do not allow disentanglement of the processes at the edges/defects from those at the intact basal plane. Therefore, to address this issue, we introduce a localized spectroelectrochemical method featuring a microdroplet electrochemical cell with simultaneous Raman spectroscopy monitoring. The electrochemical and spectral responses of the basal planes of monolayer graphene samples with varying levels of disorder were compared. Two contributions, stemming from the intact and defective areas on the surface, respectively, were discovered both in the Raman G band shifts and cyclic voltammetry using the hexaammineruthenium complex. Consequently, two independent electron transfer processes of slower and faster rates coexist in one sample, but they are restricted to the defect-free and defect-rich areas, respectively.

The Effects of Ultrasound Treatment of Graphite on the Reversibility of the (De)Intercalation of an Anion from Aqueous Electrolyte Solution.

Low cycling stability is one of the most crucial issues in rechargeable batteries. Herein, we study the effects of a simple ultrasound treatment of graphite for the reversible (de)intercalation of a ClO4- anion from a 2.4 M Al(ClO4)3 aqueous solution. We demonstrate that the ultrasound-treated graphite offers the improved reversibility of the ClO4- anion (de)intercalation compared with the untreated samples. The ex situ and in situ Raman spectroelectrochemistry and X-ray diffraction analysis of the ultrasound-treated materials shows no change in the interlayer spacing, a mild increase in the stacking order, and a large increase in the amount of defects in the lattice accompanied by a decrease in the lateral crystallite size. The smaller flakes of the ultrasonicated natural graphite facilitate the improved reversibility of the ClO4- anion electrochemical (de)intercalation and a more stable electrochemical performance with a cycle life of over 300 cycles.

Electrical Contact Resistance of Large-Area Graphene on Pre-Patterned Cu and Au Electrodes.

Contact resistance between electrically connected parts of electronic elements can negatively affect their resulting properties and parameters. The contact resistance is influenced by the physicochemical properties of the connected elements and, in most cases, the lowest possible value is required. The issue of contact resistance is also addressed in connection with the increasingly frequently used carbon allotropes. This work aimed to determine the factors that influence contact resistance between graphene prepared by chemical vapour deposition and pre-patterned Cu and Au electrodes onto which graphene is subsequently transferred. It was found that electrode surface treatment methods affect the resistance between Cu and graphene, where contact resistance varied greatly, with an average of 1.25 ± 1.54 kΩ, whereas for the Au electrodes, the deposition techniques did not influence the resulting contact resistance, which decreased by almost two orders of magnitude compared with the Cu electrodes, to 0.03 ± 0.01 kΩ.

Approach to map nanotopography of cell surface receptors.

Cells communicate with their environment via surface receptors, but nanoscopic receptor organization with respect to complex cell surface morphology remains unclear. This is mainly due to a lack of accessible, robust and high-resolution methods. Here, we present an approach for mapping the topography of receptors at the cell surface with nanometer precision. The method involves coating glass coverslips with glycine, which preserves the fine membrane morphology while allowing immobilized cells to be positioned close to the optical surface. We developed an advanced and simplified algorithm for the analysis of single-molecule localization data acquired in a biplane detection scheme. These advancements enable direct and quantitative mapping of protein distribution on ruffled plasma membranes with near isotropic 3D nanometer resolution. As demonstrated successfully for CD4 and CD45 receptors, the described workflow is a straightforward quantitative technique to study molecules and their interactions at the complex surface nanomorphology of differentiated metazoan cells.

Two-Dimensional CVD-Graphene/Polyaniline Supercapacitors: Synthesis Strategy and Electrochemical Operation.

Nanocomposites of graphene materials and conducting polymers have been extensively studied as promising materials for electrodes of supercapacitors. Here, we present a graphene/polyaniline heterostructure consisting of a CVD-graphene and polyaniline monolayer and its electrochemical operation in a supercapacitor. The synthesis employs functionalization of graphene by p-phenylene sulfonic groups and oxidative polymerization of anilinium by ammonium persulfate under reaction conditions, providing no bulk polyaniline. Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy showed the selective formation of polyaniline on the graphene. In situ Raman spectroelectrochemistry and cyclic voltammetry (both in a microdroplet setup) confirm the reversibility of polyaniline redox transitions and graphene electrochemical doping. After an increase within the initial 200 cycles due to the formation of benzoquinone-hydroquinone defects in polyaniline, the specific areal capacitance remained for 2400 cycles with ±1% retention at 21.2 µF cm-2, one order of magnitude higher than the capacitance of pristine graphene.

In Situ Raman Microdroplet Spectroelectrochemical Investigation of CuSCN Electrodeposited on Different Substrates.

Systematic in situ Raman microdroplet spectroelectrochemical (Raman-µSEC) characterization of copper (I) thiocyanate (CuSCN) prepared using electrodeposition from aqueous solution on various substrates (carbon-based, F-doped SnO2) is presented. CuSCN is a promising solid p-type inorganic semiconductor used in perovskite solar cells as a hole-transporting material. SEM characterization reveals that the CuSCN layers are homogenous with a thickness of ca. 550 nm. Raman spectra of dry CuSCN layers show that the SCN- ion is predominantly bonded in the thiocyanate resonant form to copper through its S-end (Cu-S-C≡N). The double-layer capacitance of the CuSCN layers ranges from 0.3 mF/cm2 on the boron-doped diamond to 0.8 mF/cm2 on a glass-like carbon. In situ Raman-µSEC shows that, independently of the substrate type, all Raman vibrations from CuSCN and the substrate completely vanish in the potential range from 0 to -0.3 V vs. Ag/AgCl, caused by the formation of a passivation layer. At positive potentials (+0.5 V vs. Ag/AgCl), the bands corresponding to the CuSCN vibrations change their intensities compared to those in the as-prepared, dry layers. The changes concern mainly the Cu-SCN form, showing the dependence of the related vibrations on the substrate type and thus on the local environment modifying the delocalization on the Cu-S bond.