Transfer-free, scalable vertical heterostructure FET on MoS2/WS2continuous films.

Taking into account the novel layered structure and unusual electronic properties of MoS2and WS2on the side the lack of dangling bonds between these two components and donor-acceptor linkage effects, growth of the MoS2/WS2vertical heterojunction film on the amorphous SiO2/Si substrate have created high demand. In this study, we reported the continuous, scalable, and vertical MoS2/WS2heterostructure film by using a sputtering without a transfer step. The WS2film was continuously grown on MoS2and eventually led to the formation of the MoS2/WS2vertical heterojunction film. Dozens of FETs fabricated on MoS2/WS2continuous heterojunction film were created on the same substrate in a single lithographic fabrication step, allowing them to be commercialized and not only used in research applications. RAMAN spectra proved the formation of the MoS2/WS2heterostructure film. In XPS measurements, it was shown that a separate MoS2and WS2layer was grown instead of the alloy structure. The polarity behavior of the MoS2/WS2heterostructure FET was found to be modulated with different drain voltages as p-type to ambipolar and finally n-type conductivity because of the transition of band structure and Schottky barrier heights at different drain voltages. Electron mobility (7.2 cm2V.s-1) and on/off ratio (104-105) exhibited by the MoS2/WS2heterostructure FETs displayed a more improved electrical performance than that of individual WS2, MoS2devices. It was observed that the mobility value of MoS2/WS2FET was approximately 514 times greater than WS2FET and 800 times greater than MoS2FET. Additionally, the MoS2/WS2FET on/off ratio was larger than 2 order MoS2FET and 1 order WS2FET. The film of continuous vertical heterojunctions as in the MoS2/WS2currents in the study would be a promising candidate for nanoelectronics fields. This work demonstrated the progress towards realizing carrier-type controlled high-performance MoS2/WS2heterojunction-based FETs for future logic devices.

Synthesis of Graphene-like Films by Electrochemical Reduction of Polyhalogenated Aromatic Compounds and their Electrochemical Capacitor Applications.

Graphene is a promising two-dimensional nanomaterial for many applications due to its exciting properties. In the past decade, a variety of techniques-each with its own set of advantages and disadvantages-have been developed to prepare graphene, and there are ongoing efforts to improve these techniques and to reveal new approaches. Here, we describe a simple and low-cost process for the bottom-up synthesis of graphene-like films. This new methodology involves a two-step procedure: (i) formation of polyaromatic ring structures by the repeated covalent coupling of aryl radicals generated from electrochemical reduction of polyhalogenated aromatic compounds in aprotic solvent, and (ii) production of carbon networks by heating of polyaromatic surface films. Accordingly, polymeric films were prepared on the electrodes by electrochemical reduction of polyhalogenated compounds such as hexafluorobenzene (HFB), hexachlorobenzene (HCB), and hexabromobenzene (HBB), and then polymer films were annealed at 400 °C for 30 min. The structure and surface characteristics of electrodeposited carbon films under self- and thermal-annealing conditions were studied by spectroscopic and morphological techniques. Also, the capacitance performance of the films was evaluated by means of cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy. Results indicate that graphene-like carbon films can be achieved by use of the electrochemical approach under mild conditions without expensive equipment, and also that these carbon materials are very promising for low-cost energy-storage devices.

Stress evolution of Ge nanocrystals in dielectric matrices.

Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

Putative regulation mechanism for the MSTN gene by a CpG island generated by the SINE marker Ins227bp.

BACKGROUND: A single nucleotide polymorphism (SNP) in the first intron of the myostatin gene (MSTN) is associated with aptness of elite Thoroughbreds to race over sprint, middle or long distances. This intronic marker (g.66493737 T ≻ C), a short interspersed nuclear element (SINE) of 227 bp (Ins227bp) insertion polymorphism in the MSTN promoter, and the adjacent SNP BIEC2-417495 have not been studied for their association with racing aptness of the average Thoroughbreds raced in countries with lower status of the racing industry. This study investigated these markers regarding their prevalence and association with performance in common race horses. Markers were genotyped by amplification refractory mutation system-quantitative PCR (ARMS-qPCR) or amplicon melting. Furthermore, we asked whether the Ins227bp marker might theoretically regulate the expression of myostatin by generating a novel target for DNA methylation or by changing binding sites for transcription factors. Putative sites for DNA methylation or binding of transcription factors were predicted by MethPrimer and by the softwares JASPAR, MatInspector and UniPROBE, respectively. RESULTS: Pairwise linkage disequilibrium between g.66493737 T ≻ C and Ins227bp was high (r (2) = 0.93). A lower linkage was determined for g.66493737 T ≻ C and BIEC2-417495 (r (2) = 0.69) as well as for BIEC2-417495 and Ins227bp (r (2) = 0.76). The estimated frequencies for the presence of Ins227bp (I) indel and the C alleles at g.66493737 T ≻ C and BIEC2-417495 were 0.46, 0.47 and 0.43, respectively. Heterozygotes represented the most abundant genotype at each locus. The best racing distance (BRD) was significantly different between the homozygotes of each SNP (p = 0.01 to 0.03). C allele homozygotes at BIEC2-417495 or g.66493737 T ≻ C, as well as Ins227bp homozygotes earned most money on a mean distance ranging from 1211 to 1230 m. Heterozygotes earned most money on races over 1690 to 1709 m. The BRD for the T/T carriers at both SNP loci and for the SINE-free genotype was 1812 to 1854 m. Other performance parameters were not significantly different between the genotypes, except of the relative success score (RSS). The RSS was significantly slightly better on a distance of ≤ 1300 m for all carriers of the C allele and the Ins227bp compared to homozygous T genotypes and SINE-negative horses (p = 0.037 to 0.046). For distances of more than 1300 m the RSS was not significantly different between genotypes. In silico assessment indicated that the Ins227bp promoter insertion might have generated a CpG island and a few novel putative binding sites for transcription factors. CONCLUSIONS: All three target polymorphisms (Ins227bp, g.66493737 T ≻ C, BIEC2-417495) are suitable markers to assess the ability of non-elite Thoroughbreds to race at short or longer distances. The CpG island generated by Ins227bp may cause training-induced silencing of MSTN expression.

Highly Responsive Pd-Decorated MoO3 Nanowall H2 Gas Sensors Obtained from In-Situ-Controlled Thermal Oxidation of Sputtered MoS2 Films.

Among transition metal oxides, MoO3 is a promising material due to its layered structure and different oxidation states, making it suitable for different device applications. One of the methods used to grow MoO3 is radio frequency magnetron sputtering (RFMS), which is the most compatible method in industry. However, obtaining nanostructures by RFMS for metal oxides is challenging because of compact morphology film formation. In this study, α-MoO3 with vertical nanowalls is obtained by a two-step process; deposition of magnetron-sputtered MoS2 vertical nanowalls and postoxidation of these structures without changing the morphology. In situ transmittance and electrical measurements are performed to control the oxidation process, which shed light on understanding the oxidation of MoS2 nanowalls. The transition from MoS2 to α-MoO3 is investigated with partially oxidized MoS2/MoO3 samples with different thicknesses. It is also concluded that oxidation starts from nanowalls perpendicular to the substrate and lasts with oxidation of basal planes. Four different thicknesses of α-MoO3 nanowall samples are fabricated for H2 gas sensors. Also, the effect of Pd deposition on the H2-sensing properties of sensors is deeply investigated. An outstanding response of 3.3 × 105 as well as the response and recovery times of 379 and 304 s, respectively, are achieved from the thinnest Pd-loaded sample. Also, the gas-sensing mechanism is explored by gasochromic measurements to investigate the sensor behaviors under the conditions of dry air and N2 gas as the carrier gas.

Growth Control of WS2: From 2D Layer by Layer to 3D Vertical Standing Nanowalls.

Large area 2D WS2 has been grown successfully by radio frequency magnetron sputtering (RFMS) method. First, in order to investigate the pressure dependence on the grown WS2 samples, WS2 were grown at 5 different growth pressures, 5, 10, 15, 20, and 25 mTorr. It has been observed that the surface morphology changes for the samples grown at higher growth pressures, 15, 20, and 25 mTorr. Vertically standing nanowall (NW)-like structures have been formed at these relatively high growth pressures. It has also been observed that the (002) plane is highly dominant, which means layer by layer growth parallel to the substrate, for the sample grown at 20 mTorr. X-ray photoelectron spectroscopy (XPS) measurements revealed an increasing atomic percentage of the S element to W element, S/W, ratio in thin films, as the growth pressure increases. Growth dynamics of WS2 has been investigated by time-dependent-growth WS2 samples, 5, 10, 20, 40, and 80 s under 20 mTorr pressure. It has been shown by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy that a highly smooth surface has been achieved in the samples grown for the duration of 5 and 10 s. Raman mapping measurements on the sample grown at 5 s have revealed large area homogeneous growth. As the growth time gets longer, the NWs emerge on the surface at some nucleation points. Only the peak that belongs to the (002) plane has been observed for samples grown at 5 and 10 s by the X-ray diffraction (XRD) measurements. XRD measurements have revealed the appearance of turbostratic peaks of (11l) and (10l) as the thickness increases. Photoluminescence measurements have indicated near-band-edge emission centered at 630 nm for only 5 and 10 s samples.

Whole-genome sequencing and antigenic analysis of the first equine influenza virus identified in Turkey.

BACKGROUND: In 2013, there was an outbreak of acute respiratory disease in racehorses in Turkey. The clinical signs were consistent with equine influenza (EI). OBJECTIVE: The aim was to confirm the cause of the outbreak and characterise the causal virus. METHODS: A pan-reactive influenza type A real-time RT-PCR and a rapid antigen detection kit were used for confirmatory diagnosis of equine influenza virus (EIV). Immunological susceptibility to EIV was examined using single radial haemolysis and ELISA. Antigenic characterisation was completed by haemagglutinin inhibition using a panel of specific ferret antisera. Genetic characterisation was achieved by whole-genome sequencing using segment-specific primers with M13 tags. RESULTS: A H3N8 EIV of the Florida clade 2 sublineage (FC2) was confirmed as the causal agent. The index cases were unvaccinated and immunologically susceptible. Phylogenetic analysis of the HA1 and NA genes demonstrated that A/equine/Ankara/1/2013 clustered with the FC2 strains circulating in Europe. Antigenic characterisation confirmed the FC2 classification and demonstrated the absence of significant drift. Whole-genome sequencing indicated that A/equine/Ankara/1/2013 is most closely related to the viruses described as the 179 group based on the substitution I179V in HA1, for example A/equine/East Renfrewshire/2/2011, A/equine/Cambremer/1/2012 and A/equine/Saone et Loire/1/2015. The greatest diversity was observed in the NS1 segment and the polymerase complex. CONCLUSIONS: The first recorded outbreak of EI in Turkey was caused by an FC2 virus closely related to viruses circulating in Europe. Antigenic and genetic characterisation gave no indication that the current OIE recommendations for EI vaccine composition require modification.

Biomedical system based on the Discrete Hidden Markov Model using the Rocchio-Genetic approach for the classification of internal carotid artery Doppler signals.

When the maximum likelihood approach (ML) is used during the calculation of the Discrete Hidden Markov Model (DHMM) parameters, DHMM parameters of the each class are only calculated using the training samples (positive training samples) of the same class. The training samples (negative training samples) not belonging to that class are not used in the calculation of DHMM model parameters. With the aim of supplying that deficiency, by involving the training samples of all classes in calculating processes, a Rocchio algorithm based approach is suggested. During the calculation period, in order to determine the most appropriate values of parameters for adjusting the relative effect of the positive and negative training samples, a Genetic algorithm is used as an optimization technique. The purposed method is used to classify the internal carotid artery Doppler signals recorded from 136 patients as well as of 55 healthy people. Our proposed method reached 97.38% classification accuracy with fivefold cross-validation (CV) technique. The classification results showed that the proposed method was effective for the classification of internal carotid artery Doppler signals.