RESUMEN
The coherent perfect absorption (CPA) occurring in the graphene sheet suspended in air can be utilized to develop an ultrathin, ultra-broadband absorber working in the frequency range from a few hertz (Hz) to terahertz (THz) with perfect absorption. A graphene sheet is studied to induce the CPA to cover radio, microwave and lower THz frequency ranges. A graphene resonator able to provide the surface plasmon resonance (SPR) is combined with the graphene sheet to provide CPA at either side of a thin dielectric layer forms metamaterial structure with the cavity and enhances the absorption bandwidth in the THz region by creating a resonance near quasi-CPA frequency. A dielectric silicon resonator is embedded in the structure, which creates dipolar resonances between the resonances obtained by the formed cavity between the graphene sheet and resonator. This enhances the absorption level in the THz region. The absorption bandwidth is further enhanced to 7 THz by including a graphene disc at the top of the silicon resonator. Thus, the multiple multi-order resonances occurring in the silicon dielectric and SPR of graphene resonators are merged with the phenomena of CPA occurring in the graphene sheets to extend the CPA bandwidth in the THz regime. The doping level of graphene or its tunable Fermi energy based on the applied DC electric field provides the tunability in the total obtained absorption bandwidth. The symmetric structure provides polarization-insensitive behavior with an allowed incident angle of more than 45° with more than 90% absorption.
RESUMEN
Surface plasmons generated at the graphene dielectric interface can be altered by trapping the electric charge. A technique is implemented for trapping the bipolar electric charge on the graphene surface and arranged in a desired way to enhance the performance of a monolayer graphene metamaterial based tunable, ultrathin, dual narrow band terahertz (THz) absorber. A monolayer graphene sheet placed on the dielectric substrate can provide dual-band resonance by utilizing the surface plasmons of the fundamental and third order mode index and an absorption of more than 99% and 50% can be obtained in the lower and upper band, respectively. The absorption is further enhanced to the level of perfect-absorption by utilizing the charge trapping mechanism on the graphene and generating bipolar charged nodes to create higher order surface plasmons. The multiple interference and reflection theory proves that the destructive interference in the dielectric layer is the cause of perfect absorption. The applied technique in the dual-band absorber configuration provides a tunable response which remains insensitive to the polarization and incident angle of the electromagnetic wave. The proposed perfect absorber can be utilized as a biosensor for refractive index sensing and the detection of glucose in water and the malaria virus in blood. It can provide an ultrahigh sensitivity of 14.88 THz RIU-1 with FOM as 53.09 RIU-1 with the variation in the chemical potential of graphene and 12.7 THz RIU-1 and FOM as 41.1 RIU-1 during glucose detection in water.
RESUMEN
A technique is implemented for altering the multimodal resonance generated in an ultrathin silicon ring resonator-based terahertz (THz) absorber. The absorber provides the dual-band resonance with the excitation of magnetic and electric dipole in the lower and upper band, respectively. The field of magnetic and electric dipoles is altered using a non-resonant graphene ring placed in the center of the generated dipolar arrangement and the tunability and perfect absorption is achieved. A circuit model is prepared using transmission line method and absorber operation is verified. The proposed absorber can be utilized as a biosensor for the detection of malaria virus and glucose percentage in water. The sensor offers highest sensitivity as 0.29 and 0.27 THz per thickness unit change and quality factor as 117.53 and 245 in the lower and upper band, respectively during the sensing of analyte thickness. Also, it offers the sensitivity as 0.20 and 0.10 THz per refractive index unit change and quality factor as 105.28 and 211.84 in the lower and upper band, respectively during refractive index sensing. Moreover, the structure remains insensitive to polarization angle of the incident electromagnetic wave.