RESUMEN
We present a process development leading to efficient rear side light trapping structures with the purpose of enhancing the infrared response of a silicon-based tandem solar cell. To this end, we make use of phase separation effects of two immiscible polymers, polystyrene and poly(methyl methacrylate), resulting in a non-periodic polystyrene structure on silicon with a well-defined size distribution. Onto this pattern, we evaporate silver as a scattering rear side mirror and contact layer. Average feature sizes and periods can be tuned by varying material properties (e.g. molar weights or ratios of the polymers) as well as processing conditions during the spin coating. This way a favorable pseudo period of approx. 1 µm for these disordered structure features was realized and successfully implemented into a silicon solar cell. The structure shows a ring-shaped scattering distribution which is beneficial for light trapping in solar cells. External quantum efficiency measurements show that a gain in short circuit current density of 1.1 mA/cm2 compared to a planar reference can be achieved, which is in the same range as we achieved using nanoimprint lithography in a record triple-junction III/V on a silicon device.
RESUMEN
While perovskite photovoltaic (PV) devices are on the verge of commercialization, promising methods to recycle or remanufacture fully encapsulated perovskite solar cells (PSCs) and modules are still missing. Through a detailed life-cycle assessment shown in this work, we identify that the majority of the greenhouse gas emissions can be reduced by re-using the glass substrate and parts of the PV cells. Based on these analytical findings, we develop a novel thermally assisted mechanochemical approach to remove the encapsulants, the electrode, and the perovskite absorber, allowing reuse of most of the device constituents for remanufacturing PSCs, which recovered nearly 90% of their initial performance. Notably, this is the first experimental demonstration of remanufacturing PSCs with an encapsulant and an edge-seal, which are necessary for commercial perovskite solar modules. This approach distinguishes itself from the "traditional" recycling methods previously demonstrated in perovskite literature by allowing direct reuse of bulk materials with high environmental impact. Thus, such a remanufacturing strategy becomes even more favorable than recycling, and it allows us to save up to 33% of the module's global warming potential. Remarkably, this process most likely can be universally applied to other PSC architectures, particularly n-i-p-based architectures that rely on inorganic metal oxide layers deposited on glass substrates. Finally, we demonstrate that the CO2-footprint of these remanufactured devices can become less than 30 g/kWh, which is the value for state-of-the-art c-Si PV modules, and can even reach 15 g/kWh assuming a similar lifetime.
RESUMEN
The efficiency of perovskite/silicon tandem solar cells has exceeded the previous record for III-V-based dual-junction solar cells. This shows the high potential of perovskite solar cells in multi-junction applications. Perovskite/perovskite/silicon triple-junction solar cells are now the next step to achieve efficient and low-cost multi-junction solar cells with an efficiency potential even higher than that for dual-junction solar cells. Here we present a perovskite/perovskite/silicon triple-junction solar cell with an open circuit voltage of >2.8 V, which is the record value reported for this structure so far. This is achieved through employing a gas quenching method for deposition of the top perovskite layer as well as optimization of interlayers between perovskite subcells. Moreover, for the measurement of our triple-junction solar cells, precise measurement procedures are implemented to ensure the reliability and accuracy of the reported values.
RESUMEN
A resist-free metallization of copper-plated contacts is attractive to replace screen-printed silver contacts and is demonstrated on large-area silicon heterojunction (SHJ) solar cells. In our approach, a self-passivated Al layer is used as a mask during the plating process. In this study, Al/AlOx or Al2O3 plating masks are further functionalized by a self-assembled monolayer (SAM) of octadecyl phosphonic acid (ODPA). The ODPA adsorption is characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy in attenuated total reflectance (FTIR-ATR) (in situ), and contact angle measurements to link the surface chemical composition to wetting properties. The SAM leads to homogeneous hydrophobic surfaces on large-area textured solar cells and planar flexible printed circuit boards (PCBs), which allows reproducible patterning of narrow lines by inkjet printing of an etchant. Selective copper plating is then performed to complete the metallization process and produce Cu contacts in the patterned areas. Silicon heterojunction (SHJ) solar cells metallized by the complete sequence reached up to 22.4% efficiency on a large area.
RESUMEN
Measuring the surface temperature of objects that are processed in conveyor belt furnaces is an important tool in process control and quality assurance. Currently, the surface temperature of objects processed in conveyor belt furnaces is typically measured via thermocouples. However, infrared (IR) thermography presents multiple advantages compared to thermocouple measurements, as it is a contactless, real-time, and spatially resolved method. Here, as a representative proof-of-concept example, an inline thermography system is successfully installed into an IR lamp powered solar firing furnace, which is used for the contact firing process of industrial Si solar cells. This protocol describes how to install an IR camera into a conveyor belt furnace, conduct a customer correction of a factory calibrated IR camera, and perform the evaluation of spatial surface temperature distribution on a target object.
RESUMEN
Homogeneous layer formation on textured silicon substrates is essential for the fabrication of highly efficient monolithic perovskite silicon tandem solar cells. From all well-known techniques for the fabrication of perovskite solar cells (PSCs), the evaporation method offers the highest degree of freedom for layer-by-layer deposition independent of the substrate's roughness or texturing. Hole-transporting polymers with high hole mobility and structural stability have been used as effective hole-transporting materials (HTMs) of PSCs. However, the strong intermolecular interactions of the polymers do not allow for a layer formation via the evaporation method, which is a big challenge for the perovskite community. Herein, we first applied a hole-transporting terthiophene polymer (PTTh) as an HTM for evaporated PSCs via an in situ vapor-phase polymerization using iodine (I2) as a sublimable oxidative agent. PTTh showed high hole mobility of 1.2 × 10-3 cm2/(V s) and appropriate energy levels as HTM in PSCs (EHOMO = -5.3 eV and ELUMO = -3.3 eV). The PSCs with the in situ vapor-phase polymerized PTTh hole-transporting layer and a co-evaporated perovskite layer exhibited a photovoltaic conversion efficiency of 5.9%, as a proof of concept, and high cell stability over time. Additionally, the polymer layer could fully cover the pyramidal structure of textured silicon substrates and was identified as an effective hole-transporting material for perovskite silicon tandem solar cells by optical simulation.
RESUMEN
Perovskite silicon tandem solar cells have the potential to overcome the efficiency limit of single-junction solar cells. For both monolithic and mechanically stacked tandem devices, a semi-transparent perovskite top solar cell, including a transparent contact, is required. Usually, this contact consists of a metal oxide buffer layer and a sputtered transparent conductive oxide. In this work, semi-transparent perovskite solar cells in the regular n-i-p structure are presented with tin-doped indium oxide (ITO) directly sputtered on the hole conducting material Spiro-OMeTAD. ITO process parameters such as sputter power, temperature, and pressure in the chamber are systematically varied. While a low temperature of 50 °C is crucial for good device performance, a low sputter power has only a slight effect, and an increased chamber pressure has no influence on device performance. For the 5 × 5 mm2 perovskite cell with a planar front side, a 105 nm thick ITO layer with a sheet resistance of 44 Ω sq-1 allowing for the omission of grid fingers and a MgF2 antireflection coating are used to improve transmission into the solar cells. The best device achieved an efficiency of 14.8%, which would result in 24.2% in a four-terminal tandem configuration.
RESUMEN
Dual-source vapor-phase deposition enables low-temperature fabrication of high-performance planar structure perovskite (CH3NH3PbI3) solar cells (PSCs), applicable in tandem devices or for industrial production with high homogeneity. Herein, we report low-temperature fabrication of high-efficiency PSCs by dual-source vapor-phase deposition and significance of TiO2 surface modification with [6,6]-phenyl C61 butyric acid methyl ester (PCBM) on cell performance. Co-evaporation of PbI2 and CH3NH3I, as confirmed by X-ray diffraction and high-resolution transmission electron microscopy analyses, results in CH3NH3PbI3 layers with a well-crystallized tetragonal phase formed on both TiO2 and TiO2/PCBM electron-transport layers (ETLs). The devices with PCBM interlayer between TiO2 and CH3NH3PbI3 showed remarkably higher performance than those with TiO2 only, which was attributed to enhance charge extraction and reduced recombination at the TiO2/PCBM/CH3NH3PbI3 interface. The devices composed of evaporated CH3NH3PbI3 on top of the TiO2/PCBM and [2,2',7,7'-tetrakis( N, N-di- p-methoxyphenyl-amine)-9,9'-spirobifluorene] (Spiro-OMeTAD) as hole-transport material demonstrated power conversion efficiencies of 17.1% (reverse scan) and 13.4% (forward scan) with stabilized efficiency of over 16%, which is, to the best of our knowledge, the highest efficiency reported for evaporated perovskite solar cells using low-temperature fabrication method involving compact TiO2 layer as ETL. Furthermore, we show that this process can be used to deposit a CH3NH3PbI3 layer on top of a textured silicon substrate, which is the first step for preparing perovskite-silicon tandem devices with enhanced antireflection and light-trapping properties.
RESUMEN
Relating crystallization of the absorber layer in a perovskite solar cell (PSC) to the device performance is a key challenge for the process development and in-depth understanding of these types of high efficient solar cells. A novel approach that enables real-time photo-physical and electrical characterization using a graphite-based PSC is introduced in this work. In our graphite-based PSC, the device architecture of porous monolithic contact layers creates the possibility to perform photovoltaic measurements while the perovskite crystallizes within this scaffold. The kinetics of crystallization in a solution based 2-step formation process has been analyzed by real-time measurement of the external photon to electron quantum efficiency as well as the photoluminescence emission spectra of the solar cell. With this method it was in particular possible to identify a previously overlooked crystallization stage during the formation of the perovskite absorber layer. This stage has significant influence on the development of the photocurrent, which is attributed to the formation of electrical pathways between the electron and hole contact, enabling efficient charge carrier extraction. We observe that in contrast to previously suggested models, the perovskite layer formation is indeed not complete with the end of crystal growth.
RESUMEN
The most efficient organic-inorganic perovskite solar cells (PSCs) contain the conventional n-i-p mesoscopic device architecture using a semiconducting TiO2 scaffold combined with a compact TiO2 blocking layer for selective electron transport. These devices achieve high power conversion efficiencies (15-22%) but mainly require high-temperature sintering (>450 °C), which is not possible for temperature-sensitive substrates. Thus far, comparably little effort has been spent on alternative low-temperature (<150 °C) routes to realize high-efficiency TiO2-based PSCs; instead, other device architectures have been promoted for low-temperature processing. In this paper the compatibility of the conventional mesoscopic TiO2 device architecture with low-temperature processing is presented for the first time with the combination of electron beam evaporation for the compact TiO2 and UV treatment for the mesoporous TiO2 layer. Vacuum evaporation is introduced as an excellent deposition technique of uniform compact TiO2 layers, adapting smoothly to the rough fluorine-doped tin oxide substrate surface. Effective removal of organic binders by UV light is shown for the mesoporous scaffold. Entirely low-temperature-processed PSCs with TiO2 scaffold reach encouraging stabilized efficiencies of up to 18.2%. This process fulfills all requirements for monolithic tandem devices with high-efficiency silicon heterojunction solar cells as the bottom cell.
RESUMEN
Although the power conversion efficiency of perovskite solar cells has increased from 3.81% to 22.1% in just 7 years, they still suffer from stability issues, as they degrade upon exposure to moisture, UV light, heat, and bias voltage. We herein examined the degradation of perovskite solar cells in the presence of UV light alone. The cells were exposed to 365 nm UV light for over 1,000 h under inert gas at <0.5 ppm humidity without encapsulation. 1-sun illumination after UV degradation resulted in recovery of the fill factor and power conversion efficiency. Furthermore, during exposure to consecutive UV light, the diminished short circuit current density (Jsc) and EQE continuously restored. 1-sun light soaking induced recovery is considered to be caused by resolving of stacked charges and defect state neutralization. The Jsc and EQE bounce-back phenomenon is attributed to the beneficial effects of PbI2 which is generated by the decomposition of perovskite material.
RESUMEN
I(SC)-V(OC) curves measured by the suns-V(OC) method are widely used for solar cell characterization due to its being unaffected by series resistance effects. A common setup for this measurement system uses a xenon photoflash for illumination purposes, resulting in a fast acquisition of the suns-V(OC) measurement data during the decaying edge of one flash. However, the use of a xenon photoflash accompanies also several disadvantages. Measurement errors are expected from the imperfect illumination homogeneity on the measurement stage. Also the discrepancy of the flash spectrum compared to the standard AM 1.5G spectrum leads to spectral mismatch between the sample and monitor cells when their spectral response differs. In addition, the divergence of the flash light leads to different illumination densities on the sample and the monitor cell if the height of these two cells differs. In this article these photoflash-caused measurement errors are investigated in detail, analyzing the resulting deviation in illumination density. The error due to an inhomogeneous illumination is negligible under most circumstances, while the error due to a spectral mismatch has to be considered but can be reduced drastically if an additional short-pass filter is used. The measurement error due to different cell highs should be taken into account but can be accounted for using an analytical correction.