Correlation-driven topological phase transition in 2D valleytronic materials: a mini-review.

Electronic correlation combined with spin-orbit coupling (SOC) may have a significant impact on the physical properties of two-dimensional (2D) transition metal magnetic compounds. Moreover, magnetic anisotropy (MA) is very important in determining magnetic, ferrovalley (FV) and topological properties of these 2D systems. Based on a density-functional theory (DFT) + U approach, it is found that the electronic correlation can induce topological phase transition in some special 2D valleytronic materials (for example FeCl2 and VSi2P4) with out-of-plane MA, and a novel valley-polarized quantum anomalous Hall insulator (VQAHI) and half-valley-metal (HVM) can be produced. These topological phase transitions are connected with a sign-reversible Berry curvature and band inversion between dxy/dx2-y2 and dz2 orbitals. However, for in-plane MA, the FV and nontrivial topological properties will be suppressed. For a given material, the correlation strength is fixed, but these novel electronic states and topological phase transitions can still be exhibited by strain in practice. The mini-review sheds light on the possible role of correlation effects in some special 2D valleytronic materials.

Valley polarization transition driven by biaxial strain in Janus GdClF monolayer.

The valley degree of freedom of carriers in crystals is useful to process information and perform logic operations, and it is a key factor for valley application to realize valley polarization. Here, we propose a model that the valley polarization transition at different valley points (-K and K points) is produced by biaxial strain. Using first-principles calculations, we illustrate our idea with a concrete example of a Janus GdClF monolayer. The predicted GdClF monolayer is dynamically, mechanically and thermally stable, and is a ferromagnetic (FM) semiconductor with perpendicular magnetic anisotropy (PMA), valence band maximum (VBM) at valley points and a high Curie temperature (TC). Due to its intrinsic ferromagnetism and spin-orbit coupling (SOC), a spontaneous valley polarization will be induced, but the valley splitting is only -3.1 meV, which provides an opportunity to achieve valley polarization transition at different valley points by strain. In the considered strain range (a/a0: 0.94-1.06), the strained GdClF monolayer always has an energy bandgap, strong FM coupling and PMA. The compressive strain is in favour of -K valley polarization, while the tensile strain is favorable for K valley polarization. The corresponding valley splittings at 0.96 and 1.04 strains are -44.5 meV and 29.4 meV, respectively, which are higher than the thermal energy at room temperature (25 meV). Due to its special Janus structure, both in-plane and out-of-plane piezoelectric polarizations can be observed. It is found that the direction of in-plane piezoelectric polarization can be overturned by strain, and the d11 values at 0.96 and 1.04 strains are -1.37 pm V-1 and 2.05 pm V-1, respectively. Our work paves the way to design ferrovalley materials for application in multifunctional valleytronic and piezoelectric devices by strain.

Predicted Janus SnSSe monolayer: a comprehensive first-principles study.

The Janus structure, by combining properties of different transition metal dichalcogenide (TMD) monolayers in a single polar material, has attracted increasing research interest because of its particular structure and potential application in electronics, optoelectronics and piezoelectronics. In this work, Janus SnSSe monolayer is predicted by means of first-principles calculations, and it exhibits dynamic and mechanical stability. By using the generalized gradient approximation (GGA) and spin-orbit coupling (SOC), the Janus SnSSe monolayer is found to be an indirect band-gap semiconductor, whose gap can easily be tuned by strain. High carrier mobilities are obtained for SnSSe monolayer, and the hole mobility is higher than the electron mobility. For SnSSe monolayer, a uniaxial strain in the basal plane can induce both strong in-plane and much weaker out-of-plane piezoelectric polarizations, which reveals the potential as a piezoelectric two-dimensional (2D) material. High absorption coefficients in the visible light region are observed, suggesting a potential photocatalytic application. Calculated results show that SnSSe monolayer has a very high power factor, making it a promising candidate for thermoelectric applications. Our works reveal that the Janus SnSSe structure can be fabricated with unique electronic, optical, piezoelectric and transport properties, and can motivate related experimental works.

Janus monolayer ScXY (X≠Y = Cl, Br and I) for piezoelectric and valleytronic application: a first-principle prediction.

Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X≠Y = Cl, Br and I) monolayers are predicted to be piezoelectric ferromagnetic semiconductors with dynamical, mechanical and thermal stabilities. They all show an in-plane easy axis of magnetization by calculating magnetic anisotropy energy (MAE) including magnetocrystalline anisotropy energy and magnetic shape anisotropy energy. The MAE results show that they intrinsically have no spontaneous valley polarization. The predicted piezoelectric strain coefficientsd11andd31(absolute values) are higher than ones of most 2D materials. Moreover, thed31(absolute value) of ScClI reaches up to 1.14 pm V-1, which is highly desirable for ultrathin piezoelectric device application. To obtain spontaneous valley polarization, charge doping are explored to tune the direction of magnetization of ScXY. By appropriate hole doping, their easy magnetization axis can change from in-plane to out-of-plane, resulting in spontaneous valley polarization. Taking ScBrI with 0.20 holes per f.u. as an example, under the action of an in-plane electric field, the hole carriers of K valley turn towards one edge of the sample, which will produce anomalous valley Hall effect, and the hole carriers of Γ valley move in a straight line. These findings could pave the way for designing piezoelectric and valleytronic devices.

Rifaximin Improves Visceral Hyperalgesia via TRPV1 by Modulating Intestinal Flora in the Water Avoidance Stressed Rat.

BACKGROUND: Rifaximin is effective in relieving pain symptoms with IBS patients, although the mechanisms were not clear. The aims of the research were to investigate whether the visceral hyperalgesia was alleviated by rifaximin via TRPV1 channel in rats. METHODS: Rats were subjected to water avoidance stress (WAS) and were pretreated with rifaximin by oral gavage. The visceromotor response to colorectal distension was measured. The changes of TRPV1 in peripheral and central neurons of rats were detected by immunofluorescence, western blot method, and RT-PCR. Bacterial 16S ribosomal DNA in ileal contents was assessed using the Illumina MiSeq platform. The effect of intestinal flora on TRPV1 channel was observed by fecal microbiota transplantation (FMT) methods. RESULTS: Rifaximin could relieve the visceral hyperalgesia and reduce the TRPV1 expression of neurons and ileum mucosa in rats induced by WAS. The reduced relative abundance of intestinal flora induced by WAS could be partly prevented by rifaximin. The electromyographical activities and immunoreactivity of TRPV1 in rats could be changed after FMT. CONCLUSIONS: Rifaximin could improve visceral hyperalgesia via TRPV1 channels of peripheral and central neurons by modulating intestinal flora in rats.

Born effective charge removed anomalous temperature dependence of lattice thermal conductivity in monolayer GeC.

Due to potential applications in nano- and opto-electronics, two-dimensional (2D) materials have attracted tremendous interest. Their thermal transport properties are closely related to the performance of 2D materials-based devices. Here, the phonon transports of monolayer GeC with a perfect planar hexagonal honeycomb structure are investigated by solving the linearized phonon Boltzmann equation within the single-mode relaxation time approximation (RTA). Without inclusion of Born effective charges (Z *) and dielectric constants ([Formula: see text]), the lattice thermal conductivity ([Formula: see text]) decreases almost linearly above 350 K, deviating from the usual [Formula: see text] law. The underlying mechanism is because the contribution to [Formula: see text] from high-frequency optical phonon modes increases with increasing temperature, and the contribution exceeds one from acoustic branches at high temperature. These can be understood by huge phonon band gap caused by large difference in atom mass between Ge and C atoms, which produces important effects on scattering process involving high-frequency optical phonon. When considering Z * and [Formula: see text], the phonon group velocities and phonon lifetimes of high-frequency optical phonon modes are obviously reduced with respect to ones without Z * and [Formula: see text]. The reduced group velocities and phonon lifetimes give rise to small contribution to [Formula: see text] from high-frequency optical phonon modes, which produces the the traditional [Formula: see text] relation in monolayer GeC. Our works highlight the importance of Z * and [Formula: see text] to investigate phonon transports of monolayer GeC, and motivate further theoretical or experimental efforts to investigate thermal transports of other 2D materials.

[Exogenous gene expression in vitro and in vivo in bone marrow mesenchymal stem cells modified by hPDGF-A and hBD(2)].

The objective of this study was to investigate the expression of exogenous hPDGF-A and hBD(2) in gene-modified bone marrow mesenchymal stem cells (BM-MSCs) in vitro and in vivo. Recombinant adenovirus vector expressing hPDGF-A/hBD(2) genes was constructed and packaged into virion. Primary isolated and cultured BM-MSCs were transfected by using hPDGF-A hBD(2), then the expressions of exogenous hPDGF-A/hBD(2) were detected by immunocytochemical staining in vitro. The conditioned medium (serum-free cultured supernatant of BM-MSCs transfected with recombinant adenovirus) collected from gene-modified BM-MSCs was applied to scratch wound on monolayer cells of multipotential cell line 10T1/2 in order to confirm the stimulative effect of hPDGF-A on cell migration. Gene-modified BM-MSCs were topically transplanted on wound of rats with radiation and skin excision combined injury. The distribution of BM-MSCs and expression of hPDGF-A/hBD(2) on the wound was observed by fluorescent microscopy and immunohistochemical staining respectively. The results indicated that the rat BM-MSCs transfected with recombinant adenovirus could express the EGFP in vitro. The immunofluorescent cytochemistry assay showed that the gene-modified BM-MSCs expressed the hPDGF-A and hBD(2). The scratch test confirmed that the percentage of healing area of wound in cultured supernatant group of gene-modified BM-MSCs was significant higher than that in control group on 8, 12, 24 and 48 hours (p < 0.05). The fluorescence microscopy of exogenous gene-modified BM-MSCs transplanted on wound revealed that the gene-modified BM-MSCs could higher express exogenous genes of EGFP at least within 2 weeks. The immunohistochemistry staining of wound indicated that the expression of exogenous genes began from day 3, reached to peak on day 7, and still visible on day 21 even though the expression became weak because of the possible dilution of the exogenous genes during cell division. It is concluded that efficient expression of exogenous hPDGF-A/hBD(2) in gene-modified BM-MSCs are demonstrated both in vitro and in vivo, which suggests that the molecular mechanism underlying chronic wound-healing accelerated by the strategy combining cell therapy with gene therapy.