RESUMEN
We present the results of the first systematic "round-robin" comparison of far-infrared transmittance spectra measurements, which was performed by five laboratories and piloted by Physikalisch-Technische (PTB). The transmittance spectra of four different samples were measured by the participating laboratories in the 600 cm-1 to 10 cm-1 range (16.67 µm to 1000 µm) in a blind comparison. Different types of instruments, Fourier transform infrared (FT-IR) spectrometers of Michelson type and a laser radiation-based system were used for the transmittance measurements. FT-IR spectrometers are the most popular and commonly used instruments for the spectral characterization of materials in the infrared spectral range, and are well established for quantitative measurements in the mid- and near-infrared spectral ranges. However, obtaining quantitative transmittance measurements in the far-infrared spectral range by means of these instruments is challenging, because it involves weaker radiation sources, stronger diffraction effects, significant radiation originating from the sample itself and temperature gradients inside the spectrometer that may not be given proper consideration. Therefore, this comparison was initiated to test the actual capability of and identify problems with FT-IR transmittance measurements in this spectral region. We discuss the results and the possible reasons for the observed discrepancies.
RESUMEN
We present electrochemical and chemical synthesis of platinum black at room temperature in aqueous and non-aqueous media. X-ray analysis established the purity and crystalline nature. The electron micrographs indicate that the nanostructures consist of platinum crystals that interconnect to form porous assemblies. Additionally, the electron micrographs of the platinum black thin layer, which was electrochemically deposited on different metallic and semiconductive substrates (aluminium, platinum, silver, gold, tin-cooper alloy, indium-tin-oxide, stainless steel, and copper), indicate that the substrate influences its porous features but not its absorbance characteristics. The platinum black exhibited a broad absorbance and low reflectance in the ultraviolet, visible, and infrared regions. These characteristics make this material suitable for use as a high-temperature resistant absorber layer for the fabrication of microelectronics.
RESUMEN
Optoelectronic technology has been increasingly driven towards miniaturization. In this regard, maintaining the optical properties of the bulk materials while reducing their size is a critical need. How thin must the film be to preserve the bulk material´s optical absorbance and reflectance characteristics? This is the central question for our study of the in situ electro-assembly broad band optical absorber films of platinum in non-aqueous solution of PtCl4. By reducing the in situ constructed film to sub-visible-wavelength thicknesses, the measured reflectance in the region from the ultraviolet to the infrared remained close to that exhibited by the micrometre-width films. These platinum black films broadly absorb electromagnetic waves at a sub-incident-wavelength thickness owing to their plasmonically increased absorbance cross-section. Simulation of various incident energy electron trajectories gives insights into the electron depth through the porous platinum black of ρ = 1.6 g/cm3 and previews the optical behaviour close to the atomic thickness.