Graphene Whisperitronics: Transducing Whispering Gallery Modes into Electronic Transport.

When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGMs) in analogy to classical acoustic and optical fields. The rich geometrical patterns of the WGMs decorating the local density of states offer promising perspectives to devise new disruptive quantum devices. However, exploiting these highly sensitive resonances requires the transduction of the WGMs to the outside world through source and drain electrodes, a yet unreported configuration. Here, we create a circular p-n island in a graphene device using a polarized scanning gate microscope tip and probe the resulting WGM signatures in in-plane electronic transport through the p-n island. Combining tight-binding simulations and the exact solution of the Dirac equation, we assign the measured device conductance features to WGMs and demonstrate mode selectivity by displacing the p-n island with respect to a constriction. This work therefore constitutes a proof of concept for graphene whisperitronic devices.

Genetic-algorithm-aided ultra-broadband perfect absorbers using plasmonic metamaterials.

Complete absorption of electromagnetic waves is paramount in today's applications, ranging from photovoltaics to cross-talk prevention into sensitive devices. In this context, we use a genetic algorithm (GA) strategy to optimize absorption properties of periodic arrays of truncated square-based pyramids made of alternating stacks of metal/dielectric layers. We target ultra-broadband quasi-perfect absorption of normally incident electromagnetic radiations in the visible and near-infrared ranges (wavelength comprised between 420 and 1600 nm). We compare the results one can obtain by considering one, two or three stacks of either Ni, Ti, Al, Cr, Ag, Cu, Au or W for the metal, and poly(methyl methacrylate) (PMMA) for the dielectric. More than 1017 configurations of geometrical parameters are explored and reduced to a few optimal ones. This extensive study shows that Ni/PMMA, Ti/PMMA, Cr/PMMA and W/PMMA provide high-quality solutions with an integrated absorptance higher than 99% over the considered wavelength range, when considering realistic implementation of these ultra-broadband perfect electromagnetic absorbers. Robustness of optimal solutions with respect to geometrical parameters is investigated and local absorption maps are provided. Moreover, we confirm that these optimal solutions maintain quasi-perfect broadband absorption properties over a broad angular range when changing the inclination of the incident radiation. The study also reveals that noble metals (Au, Ag, Cu) do not provide the highest performance for the present application.

Recurrent Quantum Scars in a Mesoscopic Graphene Ring.

When coherent charge carriers cross micron-scale cavities, their dynamics can be governed by a few resonant states, also called "quantum scars", determined by the cavity geometry. Quantum scars can be described using theoretical tools but have also been directly imaged in the case of high-quality semiconductor cavities as well as in disordered graphene devices, thanks to scanning gate microscopy (SGM). Here, we discuss spatially resolved SGM images of low-temperature charge transport through a mesoscopic ring fabricated from high-quality monolayer graphene lying on top of hexagonal boron nitride. SGM images are decorated with a pattern of radial scars in the ring area, which is found to evolve smoothly and reappear when varying the charge-carrier energy. The energies separating recurrent patterns are found to be directly related to geometric dimensions of the ring. Moreover, a recurrence is also observed in simulations of the local density of states of a model graphene quantum ring. The observed recurrences are discussed in the light of recent predictions of relativistic quantum scars in mesoscopic graphene cavities.

Nanoscale Heat Transport of Vertically Aligned Carbon Nanotube Bundles for Thermal Management Applications.

Electronic devices continue to shrink in size while increasing in performance, making excess heat dissipation challenging. Traditional thermal interface materials (TIMs) such as thermal grease and pads face limitations in thermal conductivity and stability, particularly as devices scale down. Carbon nanotubes (CNTs) have emerged as promising candidates for TIMs because of their exceptional thermal conductivity and mechanical properties. However, the thermal conductivity of CNT films decreases when integrated into devices due to defects and bundling effects. This study employs a novel cross-sectional approach combining high-vacuum scanning thermal microscopy (SThM) with beam-exit cross-sectional polishing (BEXP) to investigate the nanoscale morphology and thermal properties of vertically aligned CNT bundles at low and room temperatures. Using appropriate thermal transport models, we extracted effective thermal conductivities of the vertically aligned nanotubes and obtained 4 W m-1 K-1 at 200 K and 37 W m-1 K-1 at 300 K. Additionally, non-negligible lateral thermal conductance between CNT bundles suggests more complex heat transfer mechanisms in these structures. These findings provide unique insights into nanoscale thermal transport in CNT bundles, which is crucial for optimizing novel thermal management strategies.

Quantifying the local mechanical properties of twisted double bilayer graphene.

Nanomechanical measurements of minimally twisted van der Waals materials remained elusive despite their fundamental importance for device realisation. Here, we use Ultrasonic Force Microscopy (UFM) to locally quantify the variation of out-of-plane Young's modulus in minimally twisted double bilayer graphene (TDBG). We reveal a softening of the Young's modulus by 7% and 17% along single and double domain walls, respectively. Our experimental results are confirmed by force-field relaxation models. This study highlights the strong tunability of nanomechanical properties in engineered twisted materials, and paves the way for future applications of designer 2D nanomechanical systems.

On the origins of transport inefficiencies in mesoscopic networks.

A counter-intuitive behavior analogous to the Braess paradox is encountered in a two-terminal mesoscopic network patterned in a two-dimensional electron system (2DES). Decreasing locally the electron density of one channel of the network paradoxically leads to an increased network electrical conductance. Our low temperature scanning gate microscopy experiments reveal different occurrences of such puzzling conductance variations, thanks to tip-induced localized modifications of electron flow throughout the network's channels in the ballistic and coherent regime of transport. The robustness of the puzzling behavior is inspected by varying the global 2DES density, magnetic field and the tip-surface distance. Depending on the overall 2DES density, we show that either Coulomb Blockade resonances due to disorder-induced localized states or Fabry-Perot interferences tuned by the tip-induced electrostatic perturbation are at the origin of transport inefficiencies in the network, which are lifted when gradually closing one channel of the network with the tip.

Oxidation-assisted graphene heteroepitaxy on copper foil.

We propose an innovative, easy-to-implement approach to synthesize aligned large-area single-crystalline graphene flakes by chemical vapor deposition on copper foil. This method doubly takes advantage of residual oxygen present in the gas phase. First, by slightly oxidizing the copper surface, we induce grain boundary pinning in copper and, in consequence, the freezing of the thermal recrystallization process. Subsequent reduction of copper under hydrogen suddenly unlocks the delayed reconstruction, favoring the growth of centimeter-sized copper (111) grains through the mechanism of abnormal grain growth. Second, the oxidation of the copper surface also drastically reduces the nucleation density of graphene. This oxidation/reduction sequence leads to the synthesis of aligned millimeter-sized monolayer graphene domains in epitaxial registry with copper (111). The as-grown graphene flakes are demonstrated to be both single-crystalline and of high quality.

Terahertz and mid-infrared reflectance of epitaxial graphene.

Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR). Contrary to the transmittance, reflectance measurements are not hampered by the transmission window of the substrate, and in particular by the SiC Reststrahlen band in the MIR. This allows us to present IR reflectance data exhibiting a continuous evolution from the regime of intraband to interband charge carrier transitions. A consistent and simultaneous analysis of the contributions from both transitions to the optical response yields precise information on the carrier dynamics and the number of layers. The properties of the graphene layers derived from IR reflection spectroscopy are corroborated by other techniques (micro-Raman and X-ray photoelectron spectroscopies, transport measurements). Moreover, we also present MIR microscopy mapping, showing that spatially-resolved information can be gathered, giving indications on the sample homogeneity. Our work paves the way for a still scarcely explored field of epitaxial graphene-based THz and MIR optical devices.

Damage evaluation in graphene underlying atomic layer deposition dielectrics.

Based on micro-Raman spectroscopy (µRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, µRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors.

A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks.

The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a new route to a congested network in an attempt to relieve congestion can degrade counterintuitively the overall network performance. Recently, we have extended the concept of the Braess paradox to semiconductor mesoscopic networks, whose transport properties are governed by quantum physics. In this paper, we demonstrate theoretically that, alike in classical systems, congestion plays a key role in the occurrence of a Braess paradox in mesoscopic networks.