High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides.

We present a high-performance broadband (450-1550 nm) black phosphorus photodetector based on a thin-film lithium niobate waveguide. The waveguides are fabricated by the proton exchange method with flat surfaces, which reduces the stress and deformation of two-dimensional materials. At a wavelength of 1550 nm, the photodetector simultaneously achieves a high responsivity and wide bandwidth, with a responsivity as high as 147 A/W (at an optical power of 17 nW), a 3-dB bandwidth of 0.86 GHz, and a detectivity of 3.04 × 1013 Jones. Our photodetector exhibits one of the highest responsivity values among 2D material-integrated waveguide photodetectors.

Integrated barium titanate electro-optic modulators operating at CMOS-compatible voltage.

We propose monolithically integrated electro-optical modulators based on thin-film x-cut barium titanate that exhibit large modulation bandwidth and operate at voltages compatible with complementary metal-oxide-semiconductor technology. The optical and radio frequency parameters of the modulator are systematically simulated, calculated, and optimized, respectively. Our simulation includes the evaluation of single-mode conditions, the separation distance between the electrode edge and the waveguide edge, bending loss, optical field distribution, and half-wave voltage-length product for optical parameters, and characteristic impedance, attenuation constant, radio frequency effective index, and -3d B modulation bandwidth for radio frequency parameters. By engineering both the microwave and photonic circuits, we have achieved high electro-optical efficiencies and group-velocity matching simultaneously. Our numerical simulation and theoretical analysis show that the half-wave voltage-length product was 0.48 V·cm, and the -3d B modulation bandwidths with a device length of 5 mm and 10 mm were 262 GHz and 107 GHz, respectively. Overall, our study highlights the potential of the proposed modulators for low driving voltage and high-performance optical communication systems.

Photonic crystal slab fabricated on the platform of lithium niobate-on-insulator.

We report on a photonic crystal slab patterned on a 690 nm thick LiNbO3 thin film bonded to SiO2 on lithium niobate substrate. The transmission spectrum is measured and a broad and clear photonic bandgap ranging from 1335 to 1535 nm with a maximum extinction ratio of more than 20 dB is observed. The bandgap is simulated by plane wave expansion and 3D finite-difference time-domain methods. Such a deep and broad bandgap structure can be used to form high-performance photonic devices and circuits on the platform of lithium niobate-on-insulator.

Simulation and analysis of electro-optic tunable microring resonators in silicon thin film on lithium niobate.

Silicon thin film on lithium niobate combines the advantages of electronic properties of silicon and optical properties of lithium niobate, making it an ideal platform for high-density integrated optics. In this paper, we present an electro-optic tunable microring resonator in silicon thin film on lithium niobate operating at wavelengths of approximately 1.55 µm. The single-mode conditions, optical power distribution, mode profiles, and propagation losses of silicon waveguides are discussed and compared systematically. Quality factor, free spectral range, and bending losses of silicon microring resonators as different radii for different gap sizes between channel and ring waveguides are analyzed in detail. The bending loss and free spectral range decreased with increasing bending radius while the quality factor increased with increasing radius and gap size. The transmission spectrum of microring with radius R = 10 µm was tuned using the electro-optic effect. The key issues affecting the electro-optic effect, such as silicon film thickness and electric field strength, are discussed. This study is helpful for the understanding of microring structures in silicon thin film on lithium niobate, as well as for the fabrication of high-performance and multifunctional photonic integrated devices.

Visible to near-infrared supercontinuum generation in yttrium orthosilicate bulk crystal and ion implanted planar waveguide.

This paper reports on the supercontinuum generation in yttrium orthosilicate bulk crystal and 6-mm-long ion implanted planar waveguide. The waveguide is fabricated by 6 MeV oxygen ions implantation with fluence of 5 × 10(14) ions/cm(2) at room temperature. The yttrium orthosilicate bulk crystal and waveguide are pumped using a mode-locked Ti:Sapphire laser with a center wavelength of 800 nm. The generated broadest supercontinuum spans 720 nm (at -30 dB points) from 380 to 1100 nm in bulk crystal and 510 nm (at -30 dB points) from 490 to 1000 nm in ion implanted waveguide, respectively. Compared to the bulk crystal, the ion implanted waveguide requires almost three orders of magnitude lower pump power to achieve a similar level of broadening. The supercontinuum is generated in the normal dispersion regime and exhibits a relatively smooth spectral shape. Our research findings indicate that ion implantation is an efficient method to produce waveguide in yttrium orthosilicate crystal for low-threshold supercontinuum generation.