Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide.

Semiconducting graphene plays an important part in graphene nanoelectronics because of the lack of an intrinsic bandgap in graphene1. In the past two decades, attempts to modify the bandgap either by quantum confinement or by chemical functionalization failed to produce viable semiconducting graphene. Here we demonstrate that semiconducting epigraphene (SEG) on single-crystal silicon carbide substrates has a band gap of 0.6 eV and room temperature mobilities exceeding 5,000 cm2 V-1 s-1, which is 10 times larger than that of silicon and 20 times larger than that of the other two-dimensional semiconductors. It is well known that when silicon evaporates from silicon carbide crystal surfaces, the carbon-rich surface crystallizes to produce graphene multilayers2. The first graphitic layer to form on the silicon-terminated face of SiC is an insulating epigraphene layer that is partially covalently bonded to the SiC surface3. Spectroscopic measurements of this buffer layer4 demonstrated semiconducting signatures4, but the mobilities of this layer were limited because of disorder5. Here we demonstrate a quasi-equilibrium annealing method that produces SEG (that is, a well-ordered buffer layer) on macroscopic atomically flat terraces. The SEG lattice is aligned with the SiC substrate. It is chemically, mechanically and thermally robust and can be patterned and seamlessly connected to semimetallic epigraphene using conventional semiconductor fabrication techniques. These essential properties make SEG suitable for nanoelectronics.

Topography Mapping with Scanning Electrochemical Cell Microscopy.

High-resolution scanning electrochemical cell microscopy (SECCM), synchronously visualizing the topography and electrochemical activity, could be used to directly correlate the structure and activity of materials nanoscopically. However, its topographical measurement is largely restricted by the size and stability of the meniscus droplet formed at the end of the nanopipette. In this paper, we report a scheme that could reliably gain several tens nanometer resolution (≥65 nm) of SECCM using homemade ∼50 nm inner diameter probes. Furthermore, the topography and hydrogen evolution reaction (HER) activity of ∼45 nm self-assembled Au nanoparticles monolayer were simultaneously recorded successfully. This scheme could make mapping of both topologic and chemical properties of samples in the nanometer regime with SECCM routinely, which potentially can largely expand the field of SECCM applications.