Silicon Nanoantenna Mix Arrays for a Trifecta of Quantum Emitter Enhancements.

Dielectric nanostructures have demonstrated optical antenna effects due to Mie resonances. Previous work has exhibited enhancements in absorption, emission rates and directionality with practical limitations. In this paper, we present a Si mix antenna array to achieve a trifecta enhancement of ∼1200-fold with a Purcell factor of ∼47. The antenna design incorporates ∼10 nm gaps, within which fluorescent molecules strongly absorb the pump laser energy through a resonant mode. In the emission process, the antenna array increases the radiative decay rates of the fluorescence molecules via a Purcell effect and provides directional emission through a separate mode. This work could lead to novel CMOS-compatible platforms to enhance fluorescence for biological and chemical applications.

Direct Color Printing with an Electron Beam.

The direct patterning of colors using the bombardment of a focused beam of electrons onto a thin-film stack consisting of poly(methyl methacrylate) coated with a thin nickel film is demonstrated. This direct electron-beam color printing approach creates variations in the height of a Fabry-Perot (FP) cavity, resulting directly in a color print without the need for prepatterned substrates, distinct from some direct laser writing methods. Notably, the resolution of the color prints is defined by the electron beam. Height measurements with ∼5 nm accuracy through color image analysis of an electron-beam-patterned FP cavity were carried out. This technique also introduces a reflectance-based measurement of the point exposure function of a focused electron beam, aiding in rapid proximity effect corrections. In addition, the grayscale lithographic nature of this process was used to produce blazed gratings and could enable the fabrication of other 2.5D nanostructures with precise height control.

Ultraviolet Interband Plasmonics With Si Nanostructures.

Although Si acts as an electrical semiconductor, it has properties of an optical dielectric. Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultraviolet spectral range. However, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances of Si nanostructures and the observation of plasmon hybridization in the UV (∼250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than ∼500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon-enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.

Printing Beyond sRGB Color Gamut by Mimicking Silicon Nanostructures in Free-Space.

Localized optical resonances in metallic nanostructures have been increasingly used in color printing, demonstrating unprecedented resolution but limited in color gamut. Here, we introduce a new nanostructure design, which broadens the gamut while retaining print resolution. Instead of metals, silicon nanostructures that exhibit localized magnetic and electric dipole resonances were fabricated on a silicon substrate coated with a Si3N4 index matching layer. Index matching allows a suppression of substrate effects, thus enabling Kerker's conditions to be met, that is, sharpened transitions in the reflectance spectra leading to saturated colors. This nanostructure design achieves a color gamut superior to sRGB, and is compatible with CMOS processes. The presented design could enable compact high-resolution color displays and filters, and the use of a Si3N4 antireflection coating can be readily extended to designs with nanostructures fabricated using other high-index materials.

On the correlation of absorption cross-section with plasmonic color generation.

Through numerical simulations, we investigate the correlation between the absorption cross-section and the color saturation of plasmonic nanostructures of varying density. Understanding this correlation, enables the prediction of an optimal nanostructure separation, or combinations of different nanostructure sizes for plasmonic color printing applications. Here, we use metal-insulator-metal (MIM) aluminum nanostructures that support gap-plasmons. Large absorption cross-sections were observed that exceed twelve times the physical cross-section of the nanostructure disks. We derive a set of equations to determine the optimal separation for a periodic array using the absorption cross-section of an individual structure to realize saturated colors. Using the optimum pitch and enabled by the large absorption cross-sections of our structures, we employ color mixing strategies to realize a wider color gamut. The simulated color gamut exceeds the sRGB gamut for some colors, and includes dark tones. Color mixing using structures with large absorption cross-sections is a practical approach to generate a broad range of colors, in comparison to fabricating structures with continuously varying sizes.

A Nanowire-Based Plasmonic Quantum Dot Laser.

Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 µJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

Schrödinger's red pixel by quasi-bound-states-in-the-continuum.

While structural colors are ubiquitous in nature, saturated reds are mysteriously absent. This long-standing problem of achieving Schrödinger's red demands sharp transitions from "stopband" to a high-reflectance "passband" with total suppression of higher-order resonances at blue/green wavelengths. Current approaches based on nanoantennas are insufficient to satisfy all conditions simultaneously. Here, we designed Si nanoantennas to support two partially overlapping quasi-bound-states-in-the-continuum modes with a gradient descent algorithm to achieve sharp spectral edges at red wavelengths. Meanwhile, high-order modes at blue/green wavelengths are suppressed via engineering the substrate-induced diffraction channels and the absorption of amorphous Si. This design produces possibly the most saturated and brightest reds with ~80% reflectance, exceeding the red vertex in sRGB and even the cadmium red pigment. Its nature of being sensitive to polarization and illumination angle could be potentially used for information encryption, and this proposed paradigm could be generalized to other Schrödinger's color pixels.

Miniaturizing color-sensitive photodetectors via hybrid nanoantennas toward submicrometer dimensions.

Digital camera sensors use color filters on photodiodes to achieve color selectivity. As the color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the minimum pixel size. Here, we report hybrid silicon-aluminum nanostructures in the extreme limit of zero distance between color filters and sensors. This design could essentially achieve submicrometer pixel dimensions and minimize the optical cross-talk arising from tilt illuminations. The designed hybrid silicon-aluminum nanostructure has dual functionalities. Crucially, it supports a hybrid Mie-plasmon resonance of magnetic dipole to achieve color-selective light absorption, generating electron hole pairs. Simultaneously, the silicon-aluminum interface forms a Schottky barrier for charge separation and photodetection. This design potentially replaces the traditional dye-based filters for camera sensors at ultrahigh pixel densities with advanced functionalities in sensing polarization and directionality, and UV selectivity via interband plasmons of silicon.

Wide-Gamut Plasmonic Color Palettes with Constant Subwavelength Resolution.

Unlike dye-based colorants, for which dilution results in a decrease in color saturation, a reduction of nanostructure density in plasmonic prints could increase color saturation instead. This interesting observation can be explained by the absorption cross-section of the nanostructure being larger than its physical cross-section. In this paper, we demonstrate the correlation between absorption cross-section and nanostructure density and use it to realize saturated colors by fabricating metal-insulator-metal aluminum nanostructures that support gap-surface plasmons (GSPs). We obtained structures with absorption cross-sections that exceed 10 times their physical cross-sections. The large absorption cross-sections of the GSP structures herald a color-mixing scheme where nanostructures of different hues are combined within subpixels at a constant pitch. The pitch is chosen such that the total absorption cross-section of individual constituents of the cell occupies the unit size area. Using a constant pitch of 320 nm, hence preserving the print resolution, our structures exhibit 45% coverage of the sRGB color space. By employing absorption cross-sections of the nanostructures, we produced black and saturated green pixels, which have been challenging to achieve in plasmonic color printing. The effects of square and hexagonal arrangements on color saturation are investigated, and point mixing effects are observed between individual nanostructures.

Structural color three-dimensional printing by shrinking photonic crystals.

The coloration of some butterflies, Pachyrhynchus weevils, and many chameleons are notable examples of natural organisms employing photonic crystals to produce colorful patterns. Despite advances in nanotechnology, we still lack the ability to print arbitrary colors and shapes in all three dimensions at this microscopic length scale. Here, we introduce a heat-shrinking method to produce 3D-printed photonic crystals with a 5x reduction in lattice constants, achieving sub-100-nm features with a full range of colors. With these lattice structures as 3D color volumetric elements, we printed 3D microscopic scale objects, including the first multi-color microscopic model of the Eiffel Tower measuring only 39 µm tall with a color pixel size of 1.45 µm. The technology to print 3D structures in color at the microscopic scale promises the direct patterning and integration of spectrally selective devices, such as photonic crystal-based color filters, onto free-form optical elements and curved surfaces.

Highly Directive Hybrid Metal-Dielectric Yagi-Uda Nanoantennas.

A hybrid metal-dielectric nanoantenna promises to harness the large Purcell factor of metallic nanostructures while taking advantage of the high scattering directivity and low dissipative losses of dielectric nanostructures. Here, we investigate a compact hybrid metal-dielectric nanoantenna that is inspired by the Yagi-Uda design. It comprises a metallic gold bowtie nanoantenna feed element and three silicon nanorod directors, exhibiting high unidirectional in-plane directivity and potential beam redirection capability in the visible spectral range. The entire device has a footprint of only 0.38 λ2, and its forward directivity is robust against fabrication imperfections. We use the photoluminescence from the gold bowtie nanoantenna itself as an elegant emitter to characterize the directivity of the device and experimentally demonstrate a directivity of ∼49.2. In addition, we demonstrate beam redirection with our device, achieving a 5° rotation of the main emission lobe with a feed element displacement of only 16 nm. These results are promising for various applications, including on-chip wireless communications, quantum computing, display technologies, and nanoscale alignment.