RESUMEN
We propose and demonstrate a green semipolar (20-21) micro-light emitting diode (LED) acting as a high speed visible light communication (VLC) photodiode (PD). The micro-LED PD has the optical-to-electrical (OE) response of 228 MHz. A record data rate of 540 Mbit/s in on-off-keying (OOK) format with free-space transmission distance of 1.1 m was achieved, fulfilling the pre-forward error correction (FEC) limit. Many transmitters (Txs) and receivers (Rxs) is required to support the high density pico/femto-cells in future wireless networks, as well as the Internet-of-Things (IOT) networks. The proposed work could allow the realization of a low-cost, small-footprint and a high level of integration of VLC Txs and Rxs on the same platform.
RESUMEN
In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.
RESUMEN
We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-µm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.