Therapeutic strategies for retention of cranioplasty titanium mesh after mesh exposure.

BACKGROUND: Titanium mesh exposure after cranioplasty is a possible complication and is usually managed by mesh removal and flap transfer, but the advantages of the rigid prosthesis are then lost. This study aimed to present our experience with negative pressure wound therapy combined with soft tissue dilation for retaining the titanium mesh in patients with mesh exposure after cranioplasty. METHODS: This retrospective study included patients treated between 01/2016 and 05/2019 at the Jiangyin Hospital Affiliated to Southeast University School of Medicine. The wound was cleaned, and a cystic space was created for the tissue dilator, which was used with a self-designed negative pressure dressing. After the target dilation was achieved, the repair was conducted while retaining the titanium mesh. RESULTS: Eight patients were included (seven males and one female; 53.6 ± 8.8 (range, 43-65) years of age). The exposed mesh area ranged from 1 × 1 to 4 × 5.5 cm. The thinning scalp area around the exposed mesh ranged from 3.6 × 3.8 to 4 × 5.5 cm. Five patients had positive wound cultures and received sensitive antibiotics. The dilator embedding time was 20-28 days. The time of negative pressure wound therapy was 25-33 days. The hospital stay was 30-41 days. Primary wound healing was achieved in all eight patients. There were no signs of recurrence after 6-18 months of follow-up. The cranial CT scans were unremarkable. CONCLUSIONS: Negative pressure wound therapy combined with soft tissue dilation for exposed titanium mesh after cranioplasty might help retain the titanium mesh.

Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser.

It is found that the optimum annealing temperature is about 1000°C for the infrared emission of defect states at room temperature on black silicon (BS) prepared by using a nanosecond-pulsed laser. In addition, it is observed that the suitable annealing time is 6∼8 min at 1000°C for the emission on the BS. The crystallizing proceeding in annealing on the BS can be used to explain the above annealing effect. It is interesting that the emission band becomes intensive and broader on the BS prepared in oxygen atmosphere than that prepared in vacuum in the analysis of photoluminescence spectra, where the electronic states localized at the defects from D1 to D4 doped with oxygen play an important role in the emission with the broader band which are obviously enhanced in the room temperature.

LRTM effect and electronic crystal imaging on silicon surface.

Some interesting phenomena have been observed in the laser reflecting Talbot magnification (LRTM) effect discovered at first, in which the high-order nonlinear imaging and the plasmonic structures imaging occur. The LRTM effect images were obtained on the 1D and 2D photonic crystals fabricated by using nanosecond pulsed laser etching on silicon surface, where the high-order nonlinear imaging on the 1D and 2D photonic crystals was observed interestingly. The theory result is consistent with the experimental one, which exhibits that the suitable wave-front shape of injection beam selected in optical route can effectively enlarge the magnification rate and elevate the resolution of the Talbot image. Especially the periodic plasmonic structures on silicon surface have been observed in the LRTM effect images, which have a good application in the online detection of pulsed laser etching process. The temporary reflecting Talbot images exhibit that the electrons following with photonic frequency float on plasma surface to form electronic crystal observed on silicon at first, which is similar with the Wigner crystal structure.

[Advances in the Action Mechanism of Classical Pathways IKKα and IKKß in Hematological Tumors and Drug Therapy Blocking Their Effect--Review].

In recent years, it is found that the classical IKKα and IKKß pathway were closely relates with hematological tumors, except the classical pathogenesis, moreover the classical IKKß pathway is deeply studied. The studies indicated that the IKKßis activated to phosphorylate the NF-κB through multiple cascades under the effect of extracellular IL-6, TNF-α and other stimulating factors. At the cellular level, the classical IKKßcan promote the tumor cell survival and proliferation, reduce the cell apoptosis, and promote the angiogenesis and cell transfer. Although the classical IKKα plays a role in regulating IKKß activity, but its role in non-classical pathway is more prominent. This review briefly summarizes the latest advance of researches on the pathogenesis of hematological malignancies in term of IKKα and IKKßpathway, so as to provide the theoretic basis for deeply understanding and studying the pathogenesis of hematologic tumors. At present, blocking the classical IKKα and IKKß pathway has become a new target for treatment of hematological tumors, moreover, some specific inhibitor for IKKα and IKKßpathway have been developed, for example, LY2409881, BMS 345541 and so on. Most of these drugs are in clinical trials and display some good anti-tumor effects.

[Research Progress on Immune Mechanism of Immune Thrombocytopenia--Review].

Abstract　　Immune thrombocytopenia (ITP) is an acquired autoimmune hemorrhagic disease, although the ITP pathogenesis is completely unknown, but in terms of the current view, the immune tolerance is main reason for the onset of ITP. In recent years, more and more immune cell subsets, cytokines and the new approacher were found to be closely related with the ITP, such as saliva acid, B cell activating factor, dysfunction of regulatory B cells and Th1/Th2 balance drift, CD4+ CD25+ T cell function defect, IL-23/Th17 pathway regulation, etc., In this paper, the latest research progress on the immune pathogenesis of ITP are reviewed, so as to provide theoretical basis and research direction for further understanding the pathogenesis of ITP.

Retraction Note: Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

RETRACTION NOTE: The Editor has retracted this article [1] due to significant overlap in text and figures with a previous article published in another journal [2]. The authors do not agree with the retraction.

Curved surface effect and manipulation of electronic states in nanosilicon.

It is interesting in low-dimensional nanostructures of silicon that the two quantum effects play different roles in nanosilicon emission, in which the quantum confinement (QC) effect opens band gap and makes emission shift into shorter wavelengths (blue-shift) as the size of the nanocrystals is reduced; however the breaking symmetry originating from impurities on nanosilicon produces the localized electronic states in band gap and makes emission shift into longer wavelengths (red-shift). The results of experiment and calculation demonstrated that the energy levels of nanosilicon can be manipulated through these quantum effects, where the curved surface (CS) effect of impurity atoms bonding on nanosilicon is important in breaking symmetry of nanosilicon system. Here, the CS effect plays an important role on impuritied nanosilicon in smaller scale with larger surface curvature, in which a few characteristic parameters have been found to describe the breaking symmetry of nanosilicon system, such as bonding angle and projecting length of bonds on curved surface. More interesting, the coupling ways between the QC effect and the CS effect determinate the levels position of localized states in band gap and manipulate emission wavelength, where a few new phenomena were explored.

Localized states and quantum effect of photo-generated carriers in photovoltaic system.

We have fabricated the multiple nanolayers impuritied on silicon pillars for Si solar cells to pick up photons in ultraviolet and infrared region of solar spectra, in which the localized states originated from nanosilicon doped with oxygen are built to avoid Auger recombination, and some interesting quantum phenomena in the localized states have been observed. The quantum effect of photo-generated carriers has been observed in I-V curve measurement on the photovoltaic sample prepared in oxygen by using nanosecond pulsed laser. More interesting, the twin states of quantum vibration are measured in the localized states originated from the impuritied nanosilicon, which provides a stable reservoir for electrons in the photovaltaic system. It should be noted that the amplitude change of the quantum vibration occurs under magnetic field with 0.33T on the sample prepared in oxygen, owing to the electron spin in the localized states. The photoluminescence (PL) spectra measured from 300 nm to 1700 nm exhibit the localized states in various regions in the photovoltaic system, in which the electrons can stand in the localized states with longer lifetime to be uneasy into Auger recombination.

Electronic States of Nanocrystal Doped with Oxygen and Visible Emission on Black Silicon Prepared by ns-Laser.

We fabricated the black silicon (BS) structures by using nanosecond pulsed laser (ns-laser) in vacuum or in oxygen environment. It is interesting that the enhanced visible emission occurs in the photoluminescence (PL) spectra measured at room temperature and at lower temperature on the BS surface after annealing, in which lasing near 600 nm is observed on the BS surface with Purcell cavity structure. It is demonstrated in the PL spectra analysis that the electronic states in the nanocrystal doped with oxygen play a main role in the visible emission on the BS surface. The origin of the visible emission near 400, 560, or 700 nm is univocally revealed in the PL spectra analysis. A visible emission is promising for the development of the white light device on the BS.

Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.