RESUMEN
The dual sintering of copper (Cu) nanoparticles (NPs) was introduced to produce conductive patterns suitable for flexible electronics applications. In this method, laser irradiation using a Nd:YAG laser with a wavelength of 1064 nm was performed at laser powers of 400, 600 and 800 mJ. The laser irradiation time was 15 and 30 s for each laser power. After laser irradiation, all of the Cu NP patterns were thermally sintered under formic acid vapors. The temperature and time for thermal treatment were selected as 260 °C and 15 min, respectively. The resultant physical, chemical, electrical and mechanical properties were evaluated and compared considering the six different dual sintering conditions. The Cu NP patterns sintered using 800 mJ for 30 s showed increased necking and coalescence compared to the other patterns and featured a microstructure with increased density. Despite being oxidized, the Cu NP patterns sintered with 800 mJ for 30 s showed the lowest electrical resistivity of 11.25µΩ cm. The surface of every sintered Cu pattern was oxidized, and mechanical hardness increased with increasing laser power. The Cu NP pattern sintered with 800 mJ for 30 s demonstrated the highest hardness of 48.64 N mm-2. After sintering using the six different conditions, the Cu NP patterns exhibited a weight loss of 0.02-3.87 wt%, and their roughness varied in the range of 26.15-74.08 nm. This can be attributed to the effective removal of organic residues and the degree of particle agglomeration. After performing folding tests up to 50 cycles, Cu NP patterns showed an upward trend in resistance with increasing laser power and time. The highest and lowest resistance ratios were observed as 3.97 and 17.24 for the patterns sintered at 400 mJ for 15 s and 800 mJ for 30 s, respectively.
RESUMEN
As semiconductor chips have been integrated to enhance their performance, a low-dielectric-constant material, SiCOH, with a relative dielectric constant k ≤ 3.5 has been widely used as an intermetal dielectric (IMD) material in multilevel interconnects to reduce the resistance-capacitance delay. Plasma-polymerized tetrakis(trimethylsilyoxy)silane (ppTTMSS) films were created using capacitively coupled plasma-enhanced chemical vapor deposition with deposition plasma powers ranging from 20 to 60 W and then etched in CF4/O2 plasma using reactive ion etching. No significant changes were observed in the Fourier-transform infrared spectroscopy (FTIR) spectra of the ppTTMSS films after etching. The refractive index and dielectric constant were also maintained. As the deposition plasma power increased, the hardness and elastic modulus increased with increasing ppTTMSS film density. The X-ray photoelectron spectroscopy (XPS) spectra analysis showed that the oxygen concentration increased but the carbon concentration decreased after etching owing to the reaction between the plasma and film surface. With an increase in the deposition plasma power, the hardness and elastic modulus increased from 1.06 to 8.56 GPa and from 6.16 to 52.45 GPa. This result satisfies the hardness and elastic modulus exceeding 0.7 and 5.0 GPa, which are required for the chemical-mechanical polishing process in semiconductor multilevel interconnects. Furthermore, all leakage-current densities of the as-deposited and etched ppTTMSS films were measured below 10-6 A/cm2 at 1 MV/cm, which is generally acceptable for IMD materials.
RESUMEN
SiCOH thin films were deposited on rigid silicon (Si) wafers and flexible ITO/PEN substrates via plasma-enhanced chemical vapor deposition at room temperature using a tetrakis(trimethylsilyloxy)silane (TTMSS) precursor. Different chemical compositions of hydrocarbon and Si-O bondings were obtained depending on substrate types and deposition conditions. The main chemical compositions of the as-deposited films were observed as C-Hx (x = 2, 3) stretching, Si-CH3 bending, Si-O-Si stretching, and H-Si-O bending/Si-CH3 stretching modes. With regard to the as-deposited films, the dielectric constant increased from 1.83 to 3.45 when the plasma power increased from 20 to 80 W and the lowest leakage current of 1.76×10-4 A/cm² was obtained at the plasma power of 80 W. After bending tests with 1000, 5000, and 10000 bending cycles, the dielectric constants of the SiCOH films increased and leakage currents decreased. The structures of the SiCOH films after the bending tests were highly complicated with a variety of chemical bonding combinations. Higher peak intensity and peak area of main chemical bonding were obtained with the increased bending cycles, resulting in the increase in dielectric constants. It should be noted that the film with small changes in peak area fractions of the bending and stretching modes showed good electrical and mechanical stabilities after bending tests.
RESUMEN
How the brain contends with naturalistic viewing conditions when it must cope with concurrent streams of diverse sensory inputs and internally generated thoughts is still largely an open question. In this study, we used fMRI to record brain activity while a group of 18 participants watched an edited dance duet accompanied by a soundtrack. After scanning, participants performed a short behavioral task to identify neural correlates of dance segments that could later be recalled. Intersubject correlation (ISC) analysis was used to identify the brain regions correlated among observers, and the results of this ISC map were used to define a set of regions for subsequent analysis of functional connectivity. The resulting network was found to be composed of eight subnetworks and the significance of these subnetworks is discussed. While most subnetworks could be explained by sensory and motor processes, two subnetworks appeared related more to complex cognition. These results inform our understanding of the neural basis of common experience in watching dance and open new directions for the study of complex cognition.