Integrated machine learning survival framework develops a prognostic model based on inter-crosstalk definition of mitochondrial function and cell death patterns in a large multicenter cohort for lower-grade glioma.

BACKGROUND: Lower-grade glioma (LGG) is a highly heterogeneous disease that presents challenges in accurately predicting patient prognosis. Mitochondria play a central role in the energy metabolism of eukaryotic cells and can influence cell death mechanisms, which are critical in tumorigenesis and progression. However, the prognostic significance of the interplay between mitochondrial function and cell death in LGG requires further investigation. METHODS: We employed a robust computational framework to investigate the relationship between mitochondrial function and 18 cell death patterns in a cohort of 1467 LGG patients from six multicenter cohorts worldwide. A total of 10 commonly used machine learning algorithms were collected and subsequently combined into 101 unique combinations. Ultimately, we devised the mitochondria-associated programmed cell death index (mtPCDI) using machine learning models that exhibited optimal performance. RESULTS: The mtPCDI, generated by combining 18 highly influential genes, demonstrated strong predictive performance for prognosis in LGG patients. Biologically, mtPCDI exhibited a significant correlation with immune and metabolic signatures. The high mtPCDI group exhibited enriched metabolic pathways and a heightened immune activity profile. Of particular importance, our mtPCDI maintains its status as the most potent prognostic indicator even following adjustment for potential confounding factors, surpassing established clinical models in predictive strength. CONCLUSION: Our utilization of a robust machine learning framework highlights the significant potential of mtPCDI in providing personalized risk assessment and tailored recommendations for metabolic and immunotherapy interventions for individuals diagnosed with LGG. Of particular significance, the signature features highly influential genes that present further prospects for future investigations into the role of PCD within mitochondrial function.

On the electroluminescence overshoot of quantum-dot light-emitting diodes.

The charge-carrier dynamics is a fundamental question in quantum-dot light-emitting diodes (QLEDs), determining the electroluminescence (EL) properties of the devices. By means of a hole-confined QLED design, the distribution and storage/residing of the charge carriers in the devices are deciphered by the transient electroluminescence (TrEL) spectroscopic technology. It is demonstrated that the holes stored in the quantum dots (QDs) are responsible for the EL overshoot during the rising edge of the TrEL response. Moreover, the earlier electroluminescence turn-on behavior is observed due to the holes residing in the hole-confined structure. The hole storage effect should be attributed to the ultralow hole mobility of QD films and large barrier for hole escape from the cores of the QDs. Our findings provide a deep understanding of the charge transport and storage at the most critical interface between QDs and hole-transport layer, where the excitons are formed.

The fatigue effects in red emissive CdSe based QLED operated around turn-on voltage.

The operational stability is a current bottleneck facing the quantum dot light-emitting diodes (QLEDs). In particular, the device working around turn-on voltage suffers from unbalanced charge injection and heavy power loss. Here, we investigate the operational stability of red emissive CdSe QLEDs operated at different applied voltages. Compared to the rising luminance at higher voltages, the device luminance quickly decreases when loaded around the turn-on voltage, but recovers after unloading or slight heat treatment, which is termed fatigue effects of operational QLED. The electroluminescence and photoluminescence spectra before and after a period of operation at low voltages show that the abrupt decrease in device luminance derives from the reduction of quantum yield in quantum dots. Combined with transient photoluminescence and electroluminescence measurements, as well as equivalent circuit model analysis, the electron accumulation in quantum dots mainly accounts for the observed fatigue effects of a QLED during the operation around turn-on voltage. The underlying mechanisms at the low-voltage working regime will be very helpful for the industrialization of QLED.

Study on the relationship between genetic polymorphism of reductive folic acid carrier and the risk of neural tube defects.

BACKGROUND: To investigate the association of folate metabolism gene polymorphism with neural tube defects (NTDs) in Chinese population. METHODS: The subjects were divided into two groups, 495 children with NTDs (NTD group) and 255 healthy children (control group). RESULTS: The levels of folic acid, s-adenosine methionine (SAM), and Sam/s-adenosine homocysteine (SAH) in NTD group were lower than those in control group. There were significant differences in hey, SAH, and Sam levels between two groups, but there was no significant difference in folic acid content. High fever in early pregnancy, taking antiepileptic drugs, father's exposure to organic solvents, folic acid deficiency, and mother's diabetes were the important risk factors in NTDs. MTHFR 677C > T gene was a risk factor for NTD in children, while 1298A > C gene was a protective factor. CONCLUSION: Folic acid metabolism markers were different in NTD children and their mothers, and the overall trend showed that folate, SAM, and SAM/SAH levels were decreased, while Hcy and SAH levels were increased; MTHFR 677C > T gene of SNPs was a risk factor for the occurrence of NTDs, and MTHFR 1298A > C gene was a protective factor, and the environmental risk factor had a synergistic effect on occurrence of NTDs.

Efficient flexible quantum-dot light-emitting diodes with unipolar charge injection.

The exfoliation between the electrode film and the adjacent functional layer is still a big challenge for the flexible light emitting diodes, especially for the devices dependent on the direct charge injection from the electrodes. To address this issue, we design a flexible quantum-dot light-emitting diodes (QLEDs) with a charge-generation layer (CGL) on the bottom electrode as the electron supplier. The CGL consisting of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/ZnO can provide sufficient electron injection into the QDs, enabling a balanced charge injection. As a result, the CGL-based QLED exhibits a peak external quantum efficiency 18.6%, over 25% enhancement in comparison with the device with ZnO as the electron transport layer. Moreover, the residual electrons in the ZnO can be pulled back to the PEDOT:PSS/ZnO interface by the storage holes in the CGL, which are released and accelerates the electron injection during the next driving voltage pulse, hence improving the electroluminescence response speed of the QLEDs.

Improving the voltage tolerance of perovskite light-emitting diodes via a charge-generation layer.

A high electrical field is necessary to achieve a high brightness for halide perovskite light-emitting diodes (PeLEDs). Charge accumulation in the perovskite film becomes more serious under a high electrical field owing to the imbalanced charge injection in PeLEDs. Concomitantly, the perovskite film will suffer from a higher electrical field increased by the accumulated-charge-induced local electrical field, dramatically accelerating the ion migration and degradation of PeLEDs. Here we construct a voltage-dependent hole injection structure consisting of a ZnO/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) bilayer, which can properly adjust the hole injection according to the driving electrical field, matching with the injected electrons. As a result, the ZnO/PEDOT:PSS-containing PeLED can be operated under higher driving voltage with a higher peak brightness of 18920 cd/m2, which is 84% higher than the reference device based on a PEDOT:PSS single layer. Moreover, the ZnO/PEDOT:PSS-containing PeLED delivers a much higher power efficiency than the reference device under high driving voltages.

Achieving high-performance in situ fabricated FAPbBr3 and electroluminescence.

Currently, metal halide perovskite films still encounter the issues of inferior film quality and interfacial electrical properties when they were constructed electroluminescence devices. Herein, efficient and pinhole-free perovskite emissive film was obtained on the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layer modified by an ultrathin LiF layer. Owing to the synergetic effect of the LiF interlayer, including better regulation of the perovskite film and a more balanced charge injection capability, an efficient green light-emitting diode based on the perovskite film was achieved with a maximum current efficiency of 25.6 cd/A, which is 58% higher than that of the control device with a plasma-treated PEDOT:PSS layer. Our results not only provide a facile strategy for acquiring efficient perovskite films but also circumvent the expensive and time-consuming plasma treatment process commonly used to improve the wetting properties of the underlying films.

Exploring the emission mechanism of dichromatic white-light quantum-dot light-emitting diodes using wavelength-resolved transient electroluminescence analysis.

Exploring electroluminescence (EL) processes is extremely vital to fabricate efficient white-light quantum-dot light-emitting diodes (QLEDs). A model white QLED consisting of a bilayer CdSe/ZnSeS quantum-dot (QD)//CuInS2/ZnS QDs emissive layer has been used to analyze the white-light emission mechanism. In this design, the CdSe/ZnSeS QDs and CuInS2/ZnS QDs contribute to the blue and yellow emissions, respectively, in the dichromatic white QLED. Wavelength-resolved transient EL (TrEL) results demonstrate that the excitons are mainly formed on the CuInS2/ZnS QDs in the QLED operated at low biases due to the low barrier to hole injection and energy transfer from the CdSe/ZnSeS QDs to the CuInS2/ZnS QDs. Further, the TrEL decays of both white and monochromic devices reveal that the emission behavior of the white QLED is closely related to that of the monochromic device, but is minimally affected by the interactions between different emission units. The simulation results performed by the solar cell capacitance simulator model agree well with the experimental data. Our results show an insight into the EL processes in the white device QLED and demonstrate a powerful tool to investigate emission behavior of the white QLEDs.

Electrostatic Assembly Guided Synthesis of Highly Luminescent Carbon-Nanodots@BaSO4 Hybrid Phosphors with Improved Stability.

Carbon nanodots (CNDs)@BaSO4 hybrid phosphors are fabricated in an easy and low-cost process by sequentially assembling Ba2+ and SO42- ions onto the surface of carbon nanodots through electrostatic attraction. CNDs act as the nucleus to attract these reactive ions and provide the luminescent centers in the hybrid phosphors. This strategy is versatile for a variety of negatively charged CNDs with different emission colors. The advantage of the resultant hybrid phosphors is that their luminescence exhibits excellent thermal and photostability, as well as remarkable resistance to strong acid/alkali and common organic solvents. These merits allow for the fabrication of CNDs-based light-emitting diodes using the CNDs@BaSO4 hybrid phosphors as a color conversion layer.

Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes.

In this study, we report quantum-dot light-emitting devices (QD-LEDs) using ammonia reduced graphene oxide (rGO) as a hole injection layer (HIL). Compared with pristine GO, QD-LEDs employing rGO as a HIL show higher maximum luminance (936 cd m(-2) versus 699 cd m(-2)) and lower turn-on voltage (V th, 5.0 V versus 7.5 V). The improved performance can be attributed to the synergistic effect of the improved conductivity (1.27 µS cm(-1) versus 0.139 µS cm(-1)) and decreased work function (5.27 eV versus 5.40 eV) of the GO after the reduction process. The above results indicate that ammonia functionalized graphene may be a promising hole injection material for QD-LEDs.

Towards the design of efficient quantum dot light-emitting diodes by controlling the exciton lifetime.

Time-resolved photoluminescence and electroluminescence measurements were used to explore the emission characteristics of excitons in quantum dot light-emitting diodes (QD-LEDs). It is found that the lifetime of excitons in the QDs can be varied by adjusting the distance between the excitons and metal Al mirror, which is due to the effect of local density of optical states (LDOS) on the exciton decay rate. QD-LEDs with different hole transport layer (HTL) thickness, i.e., different distance between QDs and Al reflective anode, have been fabricated and it is found that the HTL thickness affects the device efficiency performance greatly, and the optimal HTL thickness for the red QD-LED (emission peak is at 621 nm) is 80 nm. These results shed light on the factors affecting the efficiency and efficiency roll-off in QD-LEDs, thus may provide a clue for high performance QD-LEDs.

Towards efficient photoinduced charge separation in carbon nanodots and TiO2 composites in the visible region.

In this work, photoinduced charge separation behaviors in non-long-chain-molecule-functionalized carbon nanodots (CDs) with visible intrinsic absorption (CDs-V) and TiO2 composites were investigated. Efficient photoinduced electron injection from CDs-V to TiO2 with a rate of 8.8 × 10(8) s(-1) and efficiency of 91% was achieved in the CDs-V/TiO2 composites. The CDs-V/TiO2 composites exhibited excellent photocatalytic activity under visible light irradiation, superior to pure TiO2 and the CDs with the main absorption band in the ultraviolet region and TiO2 composites, which indicated that visible photoinduced electrons and holes in such CDs-V/TiO2 composites could be effectively separated. The incident photon-to-current conversion efficiency (IPCE) results for the CD-sensitized TiO2 solar cells also agreed with efficient photoinduced charge separation between CDs-V and the TiO2 electrode in the visible range. These results demonstrate that non-long-chain-molecule-functionlized CDs with a visible intrinsic absorption band could be appropriate candidates for photosensitizers and offer a new possibility for the development of a well performing CD-based photovoltaic system.

Variants in MTHFR gene and neural tube defects susceptibility in China.

Neural tube defect (NTD) is a severe congenital birth abnormalities involving incomplete neural tube closure. 5, 10-methylenetetrahydrofolate reductase (MTHFR) gene plays key role in folate cycle and methylation cycle, which could affect the DNA synthesis, repair and methylation. In this study, we aim to investigate the correlation between MTHFR polymorphisms and NTD-affected pregnancy. There were 444 participants involved in our study. Tag-SNPs were identified in HapMap Databases. Blood samples were collected from all subjects to further extract the genomic DNAs by TaqMan Blood DNA kits. We also carried out a meta-analysis based on previous published studies to further examine the association between MTHFR polymorphisms and NTD. In case-control study analysis, two SNPs were identified to be associated with NTD risk. The 677 C > T genetic variant was correlated with increased risk of NTD-affected pregnancy. However, the 1298 A > C polymorphism was shown to lower the risk of NTD-affected pregnancy. The protective role of 1298 A > C polymorphisms was further supported by the result of meta-analysis. Our study revealed that the SNPs of 677C > T and 1298A > C in MTHFR were associated with NTD-affected pregnancy, in which 677C > T was a risk factor and in contrast 1298A > C was protective factor against NTD. Our results of meta-analysis also revealed the 1298A > C MTHFR polymorphism play protective role in NTD.

Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer.

We have demonstrated an efficient inverted CdSe/CdS/ZnS core/shell quantum-dot light-emitting device (QD-LED) using a solution-processed sol-gel TiO2 and ZnO nanoparticle composite layer as an electron-injection layer with controllable morphology and investigated the electroluminescence mechanism. The introduction of the ZnO layer can lead to the formation of spin-coated uniform QD films and fabrication of high-luminance QD-LEDs. The TiO2 layer improves the balance of charge injection due to its lower electron mobility relative to the ZnO layer. These results offer a practicable platform for the realization of a trade-off between the luminance and efficiency in the inverted QD-LEDs with TiO2/ZnO composites as the electron contact layer.

Efficient white light emitting diodes based on Cu-doped ZnInS/ZnS core/shell quantum dots.

We report the fabrication of efficient white light-emitting diodes (WLEDs) based on Cu : ZnInS/ZnS core/shell quantum dots (QDs) with super large Stokes shifts. The composition-controllable Cu : ZnInS/ZnS QDs with a tunable emission from deep red to green were prepared by a one-pot noninjection synthetic approach. The high performance Cu : ZnInS QD-WLEDs with the colour rendering index up to 96, luminous efficacy of 70-78 lm W(-1), and colour temperature of 3800-5760 K were successfully fabricated by integration of red and green Cu-doped QDs. Negligible energy transfer between Cu-doped QDs was clearly found by measuring the photoluminescence lifetimes of the QDs, consistent with the small spectral overlap between QD emission and absorption. The experimental results indicated low toxic Cu : ZnInS/ZnS QDs could be suitable for solid state lighting.

Experimental Research on Fatigue Behavior of Reinforced UHPC-NC Composite Beams under Cyclic Loading.

Ultra-high-performance concrete (UHPC), a new cement-based material that offers high mechanical strength and good durability, has been widely applied in construction and rehabilitation projects in recent years. An optimum bending system is achieved by positioning the UHPC layer at the bottom tensile zone of the composite beam and placing the normal-strength concrete (NC) layer at the upper compression zone, which is described as the UHPC-NC composite beam. The fatigue behavior of reinforced UHPC-NC composite beams was described in this study, with an emphasis on the effects of UHPC layer thickness and fatigue load level on the fatigue life of the beam, deformation of the interface between UHPC and NC layers, as well as the bending stiffness of the beam. A total of 9 reinforced UHPC-NC composite beams were tested under cyclic loading. The test variables include UHPC layer thicknesses (zero, 200, and 360 mm), reinforcement ratios (1.184% and 1.786%), and the upper load levels (0.39~0.65). The results showed that good bonding had been achieved without delamination between UHPC and NC layers prior to the final fatigue failure of the beam, and the bending stiffness of the composite beam experienced a three-stage reduction under cyclic loading. Furthermore, an equation was proposed to predict the stiffness reduction coefficient of UHPC-NC composite beams under cyclic loading.

Memory-Enabled Quantum-Dot Light-Emitting Diodes.

Quantum-dot light-emitting diodes (QLEDs) with memory capability can provide multifunctional integration properties in on-chip and intelligent electronic applications. Herein, memory properties are achieved by inserting a tungsten oxide (WOx) film between the ZnO electron-transporting layer and cathode. Pentavalent tungsten ions (W5+) in this nonstoichiometric WOx film can be oxidized to W6+ by storing holes, inducing significant electrons in the adjacent ZnO layer. Hole storage in the WOx layer suppresses electron injection into the quantum dot emissive layer, hence reducing electroluminescence intensity on the onset stage of the QLEDs. This operation-history correlation for the electroluminescence intensity means a memory behavior for the QLEDs. Furthermore, the power efficiency of the devices is greatly improved after inserting the WOx layer due to electrical field-dependent self-adaptive electron injection into the quantum dots (QDs). We anticipate this type of QLEDs have potential applications in on-chip integration applications, such as the optical computing field and storage.

High-Performance Tandem Quantum-Dot Light-Emitting Diodes Based on Bulk-Heterojunction-Like Charge-Generation Layers.

In this study, the fundamental but previously overlooked factors of charge generation efficiency and light extraction efficiency (LEE) are explored and collaboratively optimized in tandem quantum-dot light-emitting diodes (QLEDs). By spontaneously forming a microstructured interface, a bulk-heterojunction-like charge-generation layer composed of a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ZnO bilayer is fabricated and an ideal charge-generation efficiency surpassing 115% is obtained. The coupling strength of the waveguide mode for the top unit and the plasmon polariton loss for the bottom unit are highly suppressed using precise thickness control, which increases the LEE of the tandem devices. The red tandem QLED achieves an exceptionally low turn-on voltage for electroluminescence at 4.0 V and outstanding peak external quantum efficiency of 42.9%. The ultralow turn-on voltage originates from the sequential electroluminescence turn-on of the two emissive units of the tandem QLED. Benefiting from its unique electroluminescent features, an easily fabricated optical-electrical dual anti-counterfeiting display is built by combining a dichromatic tandem QLED with masking technology.

Single-dose Administration of Recombinant Human Thrombopoietin Enhances Survival and Hematopoietic Reconstruction in Canines Irradiated with 3 Gy Gamma Radiation.

We conducted this study to investigate the radioprotective effects of recombinant human thrombopoietin (rhTPO) on beagle dogs irradiated with 3.0 Gy 60Co gamma rays. Fifteen healthy adult beagles were randomly assigned to a control group with alleviating care, and 5 and 10 µg/kg rhTPO treatment group. All animals received total-body irradiation using 60Co γ-ray source at a dose of 3.0 Gy (dose rate was 69.1 cGy/min). The treatment group received intramuscular injection of rhTPO 5 and 10 µg/kg at 2 h postirradiation, and the control group was administrated the same volume of normal saline. The survival rate, clinical signs, peripheral hemogram, serum biochemistry, and histopathological examination of animals in each group were assessed. Single administration of 10 µg/kg rhTPO at 2 h postirradiation promoted the recovery of multilineage hematopoiesis and improved the survival rate of beagles irradiated with 3 Gy 60Co γ rays. The administration of 10 µg/kg rhTPO alleviated fever and bleeding, reduced the requirement for supportive care, and may have mitigated multiple organ damage.

Tailoring the hole-injection layer in organic light-emitting devices by introducing Au@SiO2 nanoparticles.

A simple and efficient method to improve the internal and external quantum efficiency of phosphorescent organic light-emitting devices (PhOLEDs) is demonstrated, i.e., combining the localized surface plasmon (LSP) and optical scattering effects by introducing gold nanoparticles (NPs) coated by SiO2 (named as Au@SiO2). The effects of LSP and optical scattering on PhOLEDs are studied. The lifetime of the triplet exciton in the device is modified by surface plasmon coupling induced by Au@SiO2 NPs, which results in increased internal quantum efficiency of the NP-containing devices. The optical scattering effect induced by Au@SiO2 NPs enhances the light outcoupling efficiency of the PhOLEDs and is demonstrated by measuring the angularly resolved photoluminescence. As a result, a PhOLED with 101% improved efficiency and 21% reduced efficiency roll-off is achieved using the composite HTL.